BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Australia/Sydney BEGIN:DAYLIGHT DTSTART:20221002T030000 TZOFFSETFROM:+1000 TZOFFSETTO:+1100 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=10 TZNAME:AEDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20230402T020000 TZOFFSETFROM:+1100 TZOFFSETTO:+1000 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=4 TZNAME:AEST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230327T015158Z UID:CF1793D8-4A71-4A85-A499-BFD12FD42BAE DTSTART;TZID=Australia/Sydney:20230320T140000 DTEND;TZID=Australia/Sydney:20230320T150000 DESCRIPTION:Harnessing graphene’s properties on a silicon platform could deliver a broad range of novel miniaturized and in-situ reconfigurable fun ctionalities. We will review the learnings from the development of our epi taxial graphene on silicon carbide on silicon technology and some of its m ost promising applications. This platform allows to obtain any complex gra phene -coated silicon carbide 3D nanostructures in a site – selective fa shion at the wafer -scale and with sufficient adhesion for integration [1\ , 2]. Key capabilities for nano-optics and metasurfaces in the MIR are spe cifically unlocked by the graphene/silicon carbide combination [3].\n\nWe have recently demonstrated that the sheet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC w afers\, despite substantially smaller grains. We also indicate that the co ntrol of the graphene interfaces\, particularly when integrated\, can be a more important factor than achieving large grain sizes [4]. In addition\, we show that well- engineered defects in graphene are preferable to defec t -free graphene for most electrochemical applications\, including biosens ing. Promising examples of application of this technology in the More- tha n -Moore domain include integrated energy storage [5]\, MIR sensing and de tection [6]\, and sensors for electro-encephalography [7\, 8] for brain-co mputer interfaces [9].\n\nReferences:\n\n[1] B.Cunning et al\, Nanotechnol ogy 25 (32)\, 325301\, 2014 [2] F.Iacopi et al\, Journal of Materials Rese arch 30 (5)\, 609-616\, 2015 [3] P.Rufangura e al\, Journal of Physics: Ma terials 3 (3)\, 032005\, 2020 [4] A.Pradeepkumar et al\, ACS Applied Nano Materials 3 (1)\, 830-841\, 2019 [5] M.Amjadipour\, D.Su and F.Iacopi\, Ba tteries & Supercaps 3 (7)\, 587-595\, 2020 [6] P.Rufangura et al\, Nanomat erials 11 (9)\, 2339\, 2021 [7] S.Faisal et al\, Journal of Neural Enginee ring 18 (6)\, 066035\, 2021 [8] S.Faisal et al\, ACS Appl. Nano Mater. 5\, 8\, 10137–10150\, 2022 [9] F.Iacopi and CT Lin\, Progress in Biomedical Eng. 2022\, doi.org/10.1088/2516-1091/ac993d.\n\nAgenda: \n1 Introduction \n\n2 Seminar "Complementing silicon technologies with graphene for More-T han-Moore applications"\n\n3 Q&A\n\nMacquarie University\, Lecture Room 80 3\, Level 8\, 12 Wally’s Walk\, Macquarie Park\, New South Wales\, Austr alia\, 2113 LOCATION:Macquarie University\, Lecture Room 803\, Level 8\, 12 Wally’s W alk\, Macquarie Park\, New South Wales\, Australia\, 2113 ORGANIZER:b.hoex@unsw.edu.au SEQUENCE:7 SUMMARY:COMPLEMENTING SILICON TECHNOLOGIES WITH GRAPHENE FOR MORE-THAN-MOOR E APPLICATIONS URL;VALUE=URI:https://events.vtools.ieee.org/m/352095 X-ALT-DESC:Description: <br /><p>Harnessing graphene&rsquo\;s properties on a silicon platform could deliver a broad range of novel miniaturized and in-situ reconfigurable functionalities. We will review the learnings from the development of our epitaxial graphene on silicon carbide on silicon te chnology and some of its most promising applications. This platform allows to obtain any complex graphene -coated silicon carbide 3D nanostructures in a site &ndash\; selective fashion at the wafer -scale and with sufficie nt adhesion for integration [1\, 2]. Key capabilities for nano-optics and metasurfaces in the MIR are specifically unlocked by the graphene/silicon carbide combination [3].</p>\n<p>We have recently demonstrated that the sh eet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers\, despite substantially smaller grains. We also indicate that the control of the graphene interfaces\, par ticularly when integrated\, can be a more important factor than achieving large grain sizes [4]. In addition\, we show that well- engineered defects in graphene are preferable to defect -free graphene for most electrochemi cal applications\, including biosensing. Promising examples of application of this technology in the More- than -Moore domain include integrated ene rgy storage [5]\, MIR sensing and detection [6]\, and sensors for electro- encephalography [7\, 8] for brain-computer interfaces [9].</p>\n<p>Referen ces:</p>\n<p>[1] B.Cunning et al\, Nanotechnology 25 (32)\, 325301\, 2014 [2] F.Iacopi et al\, Journal of Materials Research 30 (5)\, 609-616\, 2015 [3] P.Rufangura e al\, Journal of Physics: Materials 3 (3)\, 032005\, 202 0 [4] A.Pradeepkumar et al\, ACS Applied Nano Materials 3 (1)\, 830-841\, 2019 [5] M.Amjadipour\, D.Su and F.Iacopi\, Batteries &amp\; Supercaps 3 ( 7)\, 587-595\, 2020 [6] P.Rufangura et al\, Nanomaterials 11 (9)\, 2339\, 2021 [7] S.Faisal et al\, Journal of Neural Engineering 18 (6)\, 066035\, 2021 [8] S.Faisal et al\, ACS Appl. Nano Mater. 5\, 8\, 10137&ndash\;10150 \, 2022 [9] F.Iacopi and CT Lin\, Progress in Biomedical Eng. 2022\, doi.o rg/10.1088/2516-1091/ac993d.</p>\n<p>&nbsp\;</p><br /><br />Agenda: <br /> <p>1 Introduction</p>\n<p>2 Seminar "Complementing silicon technologies wi th graphene for More-Than-Moore applications"</p>\n<p>3 Q&amp\;A</p> END:VEVENT END:VCALENDAR