BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20231105T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230519T161659Z UID:CAC44FDF-ABC5-4528-9930-BA66D28BBE39 DTSTART;TZID=America/Los_Angeles:20230518T080000 DTEND;TZID=America/Los_Angeles:20230518T090000 DESCRIPTION:Glass\, with its manifold compositional tweaking\, offers the w idest possible range of attributes and properties relevant to carrier perf ormance in wafer thinning as well as in advanced packaging. In this presen tation\, we will first focus on the topic of wafer ultra-thinning of semic onducting as well as piezo materials. We will demonstrate that the desire for thinner substrates can be realized with 1) carriers that exhibit extre mely low total thickness variation (TTV)\, and 2) an associated temporary bonding method that presents extremely low thickness variation as well. Th e combination of Corning’s recently announced ultra-low TTV carriers wit h near-zero TTV bonding methods has proven to be a powerful tool to guaran tee high precision thinning of various wafer types.\nOn the topic of carri er properties\, the coefficient of thermal expansion (CTE) plays a major r ole in the control of in-process warpage in buildup structures such as fan -out wafer level packaging and multi-layer laminates. We will present seve ral use cases when specifically-tuned CTE is advantageous to reduce stress within a given process environment. Corning’s Advanced Packaging Carrie r (APC) product family offers glass wafers with CTE that varies from 4.9-1 2.6 ppm/C with fine granularity of 0.2 ppm/C\, in addition to silicon-matc hed glasses with a CTE of 3.4 and other glass types that go all the way do wn to 0 ppm/C. This portfolio enables the right choice of glass for each a nd every application to optimize processability.\n\nSpeaker(s): Julia Brue ckner\, \n\nVirtual: https://events.vtools.ieee.org/m/353525 LOCATION:Virtual: https://events.vtools.ieee.org/m/353525 ORGANIZER:p.wesling@ieee.org SEQUENCE:3 SUMMARY:Using Glass Carriers for Precision Wafer Thinning and Warpage Contr ol URL;VALUE=URI:https://events.vtools.ieee.org/m/353525 X-ALT-DESC:Description: <br /><p>Glass\, with its manifold compositional tw eaking\, offers the widest possible range of attributes and properties rel evant to carrier performance in wafer thinning as well as in advanced pack aging. In this presentation\, we will first focus on the topic of wafer ul tra-thinning of semiconducting as well as piezo materials. We will demonst rate that the desire for thinner substrates can be realized with 1) carrie rs that exhibit extremely low total thickness variation (TTV)\, and 2) an associated temporary bonding method that presents extremely low thickness variation as well. The combination of Corning&rsquo\;s recently announced ultra-low TTV carriers with near-zero TTV bonding methods has proven to be a powerful tool to guarantee high precision thinning of various wafer typ es.<br />On the topic of carrier properties\, the coefficient of thermal e xpansion (CTE) plays a major role in the control of in-process warpage in buildup structures such as fan-out wafer level packaging and multi-layer l aminates. We will present several use cases when specifically-tuned CTE is advantageous to reduce stress within a given process environment. Corning &rsquo\;s Advanced Packaging Carrier (APC) product family offers glass waf ers with CTE that varies from 4.9-12.6 ppm/C with fine granularity of 0.2 ppm/C\, in addition to silicon-matched glasses with a CTE of 3.4 and other glass types that go all the way down to 0 ppm/C. This portfolio enables t he right choice of glass for each and every application to optimize proces sability.</p> END:VEVENT END:VCALENDAR