BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Europe/Paris BEGIN:DAYLIGHT DTSTART:20230326T030000 TZOFFSETFROM:+0100 TZOFFSETTO:+0200 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZNAME:CEST END:DAYLIGHT BEGIN:STANDARD DTSTART:20231029T020000 TZOFFSETFROM:+0200 TZOFFSETTO:+0100 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZNAME:CET END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230707T182932Z UID:FB65EBAC-1B1F-423D-8FD4-1AB1B074F456 DTSTART;TZID=Europe/Paris:20230630T140000 DTEND;TZID=Europe/Paris:20230630T160000 DESCRIPTION:Interband cascade (IC) lasers (ICLs) take advantage of the brok en bandgap alignment in type-II InAs/Ga(In)Sb heterostructures to reuse in jected electrons in cascade stages for photon generation with high quantum efficiency based on interband transitions [1]. Significant progress has b een achieved in the development of high-performance ICLs with low power co nsumption [2-3]\, which includes successful operation of an ICL in Curiosi ty Rover on Mars for detection of CH4 [4]\, demonstration of IC vertical c avity surface emitting lasers (VCSELs) above room temperature [5]\, and ex tension of lasing wavelength beyond 13 µm [6]. ICLs are now commercially available for many applications such as chemical sensing and environmental monitoring. Also\, the IC architecture has been explored for other optoel ectronic devices such as light emitting diodes [2]\, infrared photodetecto rs and photovoltaic cells [7-10]. Combination of interband transitions and fast carrier transport in IC structures provides more flexibilities and a dvantages to achieve high performance for photodetectors and photovoltaic cells. The unique features and prospects of ICLs and relevant optoelectron ic devices will be reviewed and discussed with some recent experimental re sults.\n\n- R. Q. Yang\, at 7th Inter. Conf. on Superlattices\, Microstruc tures and Microdevices\, Banff\, Canada\, August 1994\; Superlattices and Microstructures 17\, 77 (1995)\; “Novel concepts and structures for infr ared lasers”\, chapter 2 in Long Wavelength Infrared Emitters Based on Q uantum Wells and Superlattices\, M. Helm\, editor\, Gordon and Breach\, Si ngapore\, 2000.\n- J. R. Meyer\, et al.\, Photonics 7\, 75 (2020)\; and re ferences therein.\n- R. Q. Yang\, L. Li\, W. Huang\, S.M.S. Rassel\, J. A. Gupta\,A. Bezinger\, X. Wu\, S.G. Razavipour\, G. C. Aers\, IEEE J. Selec ted Topics Quantum Electronics\, 25\, 1200108 (2019)\; and references ther ein.\n- C. R. Webster\, et al.\, the MSL Science Team\, Science 347\, 415 (2015).\n- W. W. Bewley\, et al.\, Appl. Phys. Lett. 109\, 151108 (2016).\ n- J. A. Massengale\, et al.\, Semicond. Sci. Technol. 38\, 025009 (2023). \n- R. Q. Yang\, et al\, J. Appl. Phys. 107\, No. 5\, 054514 (2010).\n- R. Q. Yang\, W. Huang\, M. B. Santos\, Solar Energy Materials and Solar Cell s238\, 111636 (2022).\n- R. T. Hinkey and R. Q. Yang\, J. Appl. Phys. 114\ , 104506 (2013).\n- R. Q. Yang\, Applied Physics Letters 119\, 141107 (202 1).\n\nSpeaker(s): Professor Rui Q. Yang\, \n\nRoom: 1C33\, 19 place Margu erite Perey\, Palaiseau\, Ile-de-France\, France\, 91120\, Virtual: https: //events.vtools.ieee.org/m/353835 LOCATION:Room: 1C33\, 19 place Marguerite Perey\, Palaiseau\, Ile-de-France \, France\, 91120\, Virtual: https://events.vtools.ieee.org/m/353835 ORGANIZER:grillot@telecom-paris.fr SEQUENCE:11 SUMMARY:Interband Cascade Lasers and Related Optoelectronic Devices URL;VALUE=URI:https://events.vtools.ieee.org/m/353835 X-ALT-DESC:Description: <br /><p>Interband cascade (IC) lasers (ICLs) take advantage of the broken bandgap alignment in type-II InAs/Ga(In)Sb heteros tructures to reuse injected electrons in cascade stages for photon generat ion with high quantum efficiency based on interband transitions [1].&nbsp\ ; Significant progress has been achieved in the development of high-perfor mance ICLs with low power consumption [2-3]\, which includes successful op eration of an ICL in Curiosity Rover on Mars for detection of CH<sub>4</su b> [4]\, demonstration of IC vertical cavity surface emitting lasers (VCSE Ls) above room temperature [5]\, and extension of lasing wavelength beyond 13 &micro\;m [6]. ICLs are now commercially available for many applicatio ns such as chemical sensing and environmental monitoring. Also\, the IC ar chitecture has been explored for other optoelectronic devices such as ligh t emitting diodes [2]\, infrared photodetectors and photovoltaic cells [7- 10].&nbsp\; Combination of interband transitions and fast carrier transpor t in IC structures provides more flexibilities and advantages to achieve h igh performance for photodetectors and photovoltaic cells. The unique feat ures and prospects of ICLs and relevant optoelectronic devices will be rev iewed and discussed with some recent experimental results.</p>\n<p>&nbsp\; </p>\n<ol>\n<li>R. Q. Yang\, at <em>7th Inter. Conf. on Superlattices\, Mi crostructures and Microdevices</em>\, Banff\, Canada\, August 1994\; <em>S uperlattices and Microstructures</em> <strong>17</strong>\, 77 (1995)\; &l dquo\;Novel concepts and structures for infrared lasers&rdquo\;\, chapter 2 in <em>Long Wavelength Infrared Emitters Based on Quantum Wells and Supe rlattices</em>\, M. Helm\, editor\, Gordon and Breach\, Singapore\, 2000.< /li>\n<li>J. R. Meyer\, <em>et al</em>.\, Photonics <strong>7</strong>\, 7 5 (2020)\; and references therein.</li>\n<li>R. Q. Yang\, L. Li\, W. Huang \, S.M.S. Rassel\, J. A. Gupta\,A. Bezinger\, X. Wu\, S.G. Razavipour<stro ng>\, </strong>G. C. Aers\, IEEE J. Selected Topics Quantum Electronics\, <strong>25</strong>\, 1200108 (2019<strong>)</strong>\; and references the rein.</li>\n<li>C. R. Webster\, <em>et al</em>.\, the MSL Science Team\,&n bsp\;Science <strong>347</strong>\,&nbsp\;415 (2015).</li>\n<li>W. W. Bewl ey\, <em>et al</em>.\, Appl. Phys. Lett.<strong> 109</strong>\, 151108 (20 16).</li>\n<li>J. A. Massengale\, <em>et al</em>.\, Semicond. Sci. Technol .&nbsp\;<strong>38</strong>\, 025009 (2023).</li>\n<li>R. Q. Yang\,<sup> < /sup><em>et al</em>\, J. Appl. Phys. <strong>107</strong>\, No. 5\, 054514 (2010).</li>\n<li>R. Q. Yang\, W. Huang\, M. B. Santos\, Solar Energy Mat erials and Solar Cells<strong>238</strong><em><strong>\,&nbsp\;</strong></ em>111636 (2022).</li>\n<li>R. T. Hinkey and R. Q. Yang\, J. Appl. Phys. < strong>114</strong>\, 104506 (2013).</li>\n<li>R. Q. Yang\, Applied Physic s Letters <strong>119</strong>\, 141107 (2021).</li>\n</ol> END:VEVENT END:VCALENDAR