BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20231105T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230327T155606Z UID:74664AF6-6227-4D72-B464-9A245ABC49D3 DTSTART;TZID=America/New_York:20230324T120000 DTEND;TZID=America/New_York:20230324T131500 DESCRIPTION:The emergence of embedded magnetic random-access memory (MRAM) provides an unprecedented opportunity to develop unconventional computing architectures\, which go far beyond using MRAM as a mere replacement for e xisting memory solutions (e.g.\, embedded Flash or SRAM).\n\nThis talk wil l consist of two parts: First\, we review the current state of development of ferromagnet-based MRAM\, which uses current-induced spin-transfer torq ue (STT) to switch the magnetic state. We then discuss how emerging device concepts based on new physics and new materials may enable significant ad vances beyond today’s STT-MRAM: (i) As an example of new physics\, we di scuss electric-field-controlled MRAM devices that utilize the voltage-cont rolled magnetic anisotropy (VCMA) effect for switching\, and present recen t results on developing the first VCMA-MRAM devices with sub-1V write volt age [1]. (ii) As an example of new materials\, we then examine devices bas ed on antiferromagnetic (AFM) materials\, which may offer advantages such as picosecond switching\, improved scalability\, and immunity to external magnetic fields. We review recent progress in manipulating the Néel vecto r of such materials by current-induced spin-orbit torque (SOT) [2-4] and d iscuss perspectives for their further development.\n\nSecond\, we will dis cuss how appropriately designed stochastic MRAM cells with low retention t ime can be used to fulfill unconventional roles within a computing system\ , notably as electrically controlled stochastic bitstream (SBS) generators . We then discuss the application of such MRAM-based SBS generators to tru e random number generation and stochastic computing (SC) and present our r ecent results on the implementation of an SC-based artificial neural netwo rk using a series of stochastic MRAM cells [5]. We then show examples of h ow a network of stochastic MRAM bits with appropriately designed control/r eadout circuitry – referred to as probabilistic (p-) bits – can be use d to solve difficult optimization problems.\n\nCo-sponsored by: Virginia C ommonwealth University\, Department of Mechanical and Nuclear Engineering \n\nSpeaker(s): Dr. Pedram Khalili\, \n\nRoom: E3229\, Bldg: East Engineer ing Building \, 401 W Main Street\, Mechanical and Nuclear Engineer\, Rich mond\, Virginia\, United States\, 23284 LOCATION:Room: E3229\, Bldg: East Engineering Building \, 401 W Main Street \, Mechanical and Nuclear Engineer\, Richmond\, Virginia\, United States\, 23284 ORGANIZER:rhadimani@vcu.edu SEQUENCE:2 SUMMARY:Unconventional computing with electric-field- controlled and antife rromagnetic spintronic devices URL;VALUE=URI:https://events.vtools.ieee.org/m/353898 X-ALT-DESC:Description: <br /><p>The emergence of embedded magnetic random- access memory (MRAM) provides an unprecedented opportunity to develop unco nventional computing architectures\, which go far beyond using MRAM as a m ere replacement for existing memory solutions (e.g.\, embedded Flash or SR AM).</p>\n<p>This talk will consist of two parts: First\, we review the cu rrent state of development of ferromagnet-based MRAM\, which uses current- induced spin-transfer torque (STT) to switch the magnetic state. We then d iscuss how emerging device concepts based on new physics and new materials may enable significant advances beyond today&rsquo\;s STT-MRAM: (i) As an example of new physics\, we discuss electric-field-controlled MRAM device s that utilize the voltage-controlled magnetic anisotropy (VCMA) effect fo r switching\, and present recent results on developing the first VCMA-MRAM devices with sub-1V write voltage [1]. (ii) As an example of new material s\, we then examine devices based on antiferromagnetic (AFM) materials\, w hich may offer advantages such as picosecond switching\, improved scalabil ity\, and immunity to external magnetic fields. We review recent progress in manipulating the N&eacute\;el vector of such materials by current-induc ed spin-orbit torque (SOT) [2-4] and discuss perspectives for their furthe r development.</p>\n<p>&nbsp\;</p>\n<p>Second\, we will discuss how approp riately designed stochastic MRAM cells with low retention time can be used to fulfill unconventional roles within a computing system\, notably as el ectrically controlled stochastic bitstream (SBS) generators. We then discu ss the application of such MRAM-based SBS generators to true random number generation and stochastic computing (SC) and present our recent results o n the implementation of an SC-based artificial neural network using a seri es of stochastic MRAM cells [5]. We then show examples of how a network of stochastic MRAM bits with appropriately designed control/readout circuitr y &ndash\; referred to as probabilistic (p-) bits &ndash\; can be used to solve difficult optimization problems.</p> END:VEVENT END:VCALENDAR