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DTSTAMP:20231202T005441Z
UID:D313C009-4B9C-41A3-9209-EA321D7E8A20
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DESCRIPTION:[Atomic Layer Deposition  of 2D Dichalcogenides at Wafer Scale]
 \n\nNano Journal Club (11:30 am - 12 noon)\n\nNano Journal Club is hosting
  a discussion of the article titled:\n\n[Challenges for Nanoscale CMOS Log
 ic Based on 2D Materials](https://stats.sender.net/link_click/FRPfAVdc3N_B
 Geds/dfa65620596de66beb5b39ac6343e192)\n\nhttps://stats.sender.net/link_cl
 ick/FRPfAVdc3N_BGeds/dfa65620596de66beb5b39ac6343e192\n\nAttendees are enc
 ouraged to participate in the Nano Journal Club discussion. You can access
  the paper using the embedded link.\n\nSeminar (12:10 pm - 12:55 pm):\n\nA
 tomic Layer Deposition of 2D Dichalcogenides at Wafer Scale\n\n2D Transiti
 on metal dichalcogenide (TMD) materials have opened a route to continue th
 e down-scaling trend of semiconductor technology.\n\nThe synthesis of conf
 ormal high quality 2D TMDs on 300 mm wafers is required to unlock the pote
 ntial application of these materials in electronic devices. EMD Electronic
 s is establishing a platform for TMD development using atomic layer deposi
 tion (ALD).\n\nThe talk will be focusing on 300 mm wafer-scale ALD deposit
 ion of TMD materials at temperatures ranging from 350 to 600 °C. The prop
 osed ALD approach contributes to the efforts in developing high-quality 2D
  TMD materials that offer high performance and meet the down-scaling deman
 d.\n\nIn the past 3 years\, Thong and the EMD Electronics Team at San Jose
  have been developing an ALD 2D materials platform focusing on TMDs for hi
 gh mobility channel and Cu barrier/liner applications\n\n[]\n\n[]\n\nDr. T
 hong Ngo is an R&amp;D engineer at EMD Electronics.\n\nThong finished his Ph.D
 . in Chemical Engineering from The University of Texas at Austin in 2015. 
 His Ph.D. work explored functional crystalline oxides on Si and Ge for ele
 ctronics using atomic layer deposition (ALD).\n\nThong joined Intermolecul
 ar Inc.\, a subsidiary of EMD Electronics\, in 2015 where he has been work
 ing on materials process development\, characterization\, and integration 
 for memory applications.\n\nHybrid Event\n\nThis will be a Hybrid Event {I
 n-Person &amp; Zoom linked]\n\nThose planning to attend in person should arriv
 e early. They will need to complete an electronic check-in before being ad
 mitted into Intermolecular.\n\nEnter the rear of the building from Orchard
  Parkway. You should park on the back side off of Orchard Parkway.\n\nIf y
 ou will be unable to arrive in-person before the seminar starts - please p
 lan on joining via Zoom\n\nAll ticket registrants will be sent Zoom links 
 before the event. Information will be sent to the email address entered wh
 en you register.\n\nAgenda: \nAgenda\n\n11:30 AM - 12:00 PM\n\nNano Journa
 l Club\n\nLincoln Bourne\n\n----------------------------------------------
 -----------------\n\nThe following paper will be discussed: &quot;Challenges fo
 r Nanoscale CMOS Logic Based on 2D Materials&quot;\n\n12:00 PM - 12:10 PM\n\nIn
 troduction\; Announcements and Speaker Introduction\n\nGlenn Friedman\n\n1
 2:10 PM - 12:55 PM\n\nSeminar\n\nThong Ngo\n\n12:55 PM - 1:15 PM\n\nQ &amp; A\
 n\nIntermolecular Inc\, 3011 North First Street\,  San Jose\, California\,
  United States\, 95134\, Virtual: https://events.vtools.ieee.org/m/357715
LOCATION:Intermolecular Inc\, 3011 North First Street\,  San Jose\, Califor
 nia\, United States\, 95134\, Virtual: https://events.vtools.ieee.org/m/35
 7715
ORGANIZER:g.m.friedman@ieee.org
SEQUENCE:10
SUMMARY:Atomic Layer Deposition of 2D Dichalcogenides at Wafer Scale
URL;VALUE=URI:https://events.vtools.ieee.org/m/357715
X-ALT-DESC:Description: &lt;br /&gt;&lt;div class=&quot;has-user-generated-content&quot;&gt;\n&lt;di
 v class=&quot;eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-text-bm structured-conte
 nt-rich-text&quot;&gt;\n&lt;div class=&quot;eds-text--left&quot;&gt;\n&lt;h3&gt;&lt;em&gt;&lt;strong&gt;&lt;img src=&quot;ht
 tps://img.evbuc.com/https%3A%2F%2Fcdn.evbuc.com%2Fimages%2F493039029%2F282
 37422945%2F1%2Foriginal.20230414-192250?w=600&amp;amp\;auto=format%2Ccompress&amp;
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 t Wafer Scale&quot; /&gt;&lt;/strong&gt;&lt;/em&gt;&lt;/h3&gt;\n&lt;h3&gt;&lt;em&gt;&lt;strong&gt;Nano Journal Club (1
 1:30 am - 12 noon)&lt;/strong&gt;&lt;/em&gt;&lt;/h3&gt;\n&lt;p&gt;&lt;strong&gt;Nano Journal Club is hos
 ting a discussion of the article titled:&lt;/strong&gt;&lt;/p&gt;\n&lt;h3&gt;&lt;a href=&quot;https:
 //stats.sender.net/link_click/FRPfAVdc3N_BGeds/dfa65620596de66beb5b39ac634
 3e192&quot; target=&quot;_blank&quot; rel=&quot;nofollow noopener noreferrer&quot;&gt;Challenges for N
 anoscale CMOS Logic Based on 2D Materials&lt;/a&gt;&lt;/h3&gt;\n&lt;p&gt;https://stats.sende
 r.net/link_click/FRPfAVdc3N_BGeds/dfa65620596de66beb5b39ac6343e192&lt;/p&gt;\n&lt;p
 &gt;&lt;strong&gt;Attendees are encouraged to participate in the Nano Journal Club 
 discussion. You can access the paper using the embedded link.&lt;/strong&gt;&lt;/p&gt;
 \n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div class=&quot;eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-tex
 t-bm structured-content-rich-text&quot;&gt;\n&lt;div class=&quot;eds-text--left&quot;&gt;\n&lt;h3&gt;&lt;st
 rong&gt;&lt;em&gt;Seminar (12:10 pm - 12:55 pm):&lt;/em&gt;&lt;/strong&gt;&lt;/h3&gt;\n&lt;h3&gt;&lt;strong&gt;At
 omic Layer Deposition of 2D Dichalcogenides at Wafer Scale&lt;/strong&gt;&lt;/h3&gt;\n
 &lt;p&gt;2D Transition metal dichalcogenide (TMD) materials have opened a route 
 to continue the down-scaling trend of semiconductor technology.&lt;/p&gt;\n&lt;p&gt;Th
 e synthesis of conformal high quality 2D TMDs on 300 mm wafers is required
  to unlock the potential application of these materials in electronic devi
 ces. EMD Electronics is establishing a platform for TMD development using 
 atomic layer deposition (ALD).&lt;/p&gt;\n&lt;p&gt;The talk will be focusing on 300 mm
  wafer-scale ALD deposition of TMD materials at temperatures ranging from 
 350 to 600 &amp;deg\;C. The proposed ALD approach contributes to the efforts i
 n developing high-quality 2D TMD materials that offer high performance and
  meet the down-scaling demand.&lt;/p&gt;\n&lt;p&gt;In the past 3 years\, Thong and the
  EMD Electronics Team at San Jose have been developing an ALD 2D materials
  platform focusing on TMDs for high mobility channel and Cu barrier/liner 
 applications&lt;/p&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div class=&quot;eds-l-mar-vert-6 eds-l-sm-ma
 r-vert-4 eds-text-bm undefined&quot;&gt;\n&lt;div&gt;\n&lt;div class=&quot;eds-fx--fade-in&quot;&gt;&lt;img
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 &amp;amp\;w=720&amp;amp\;auto=format%2Ccompress&amp;amp\;q=75&amp;amp\;sharp=10&amp;amp\;s=860
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 iv&gt;\n&lt;div class=&quot;eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-text-bm undefine
 d&quot;&gt;\n&lt;div&gt;\n&lt;div class=&quot;eds-fx--fade-in&quot;&gt;&lt;img class=&quot;eds-max-img&quot; src=&quot;htt
 ps://img.evbuc.com/https%3A%2F%2Fcdn.evbuc.com%2Fimages%2F492497809%2F2823
 7422945%2F1%2Foriginal.20230414-040947?h=2000&amp;amp\;w=720&amp;amp\;auto=format%
 2Ccompress&amp;amp\;q=75&amp;amp\;sharp=10&amp;amp\;s=49593debfeac1360832a2a628673ebe9
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 rt-6 eds-l-sm-mar-vert-4 eds-text-bm structured-content-rich-text&quot;&gt;\n&lt;div 
 class=&quot;eds-text--left&quot;&gt;\n&lt;p&gt;&lt;strong&gt;Dr. Thong Ngo&amp;nbsp\;&lt;/strong&gt;is an R&amp;a
 mp\;D engineer at EMD Electronics.&lt;/p&gt;\n&lt;p&gt;Thong finished his Ph.D. in Che
 mical Engineering from The University of Texas at Austin in 2015. His Ph.D
 . work explored functional crystalline oxides on Si and Ge for electronics
  using atomic layer deposition (ALD).&lt;/p&gt;\n&lt;p&gt;Thong joined Intermolecular 
 Inc.\, a subsidiary of EMD Electronics\, in 2015 where he has been working
  on materials process development\, characterization\, and integration for
  memory applications.&lt;/p&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div class=&quot;eds-l-mar-vert-6 ed
 s-l-sm-mar-vert-4 eds-text-bm structured-content-rich-text&quot;&gt;\n&lt;div class=&quot;
 eds-text--left&quot;&gt;\n&lt;h3&gt;&lt;strong&gt;Hybrid Event&lt;/strong&gt;&lt;/h3&gt;\n&lt;p&gt;This will be 
 a&amp;nbsp\;&lt;strong&gt;Hybrid Event {In-Person &amp;amp\; Zoom linked]&lt;/strong&gt;&lt;/p&gt;\n
 &lt;p&gt;&lt;strong&gt;&lt;em&gt;Those planning to attend in person should arrive early.&amp;nbs
 p\;&lt;/em&gt;&lt;/strong&gt;They will need to complete an electronic check-in before 
 being admitted into Intermolecular.&lt;/p&gt;\n&lt;p&gt;Enter the rear of the building
  from Orchard Parkway. You should park on the back side off of Orchard Par
 kway.&lt;/p&gt;\n&lt;p&gt;If you will be unable to arrive in-person before the seminar
  starts - please plan on joining via Zoom&lt;/p&gt;\n&lt;p&gt;All ticket registrants w
 ill be sent Zoom links before the event. Information will be sent to the e
 mail address entered when you register.&lt;/p&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;&lt;br /&gt;&lt;
 br /&gt;Agenda: &lt;br /&gt;&lt;div class=&quot;event-details__section-title&quot;&gt;\n&lt;h2&gt;Agenda&lt;
 /h2&gt;\n&lt;/div&gt;\n&lt;div class=&quot;css-1u6j0vj eiwoi2i0&quot; data-testid=&quot;agenda-compon
 ent&quot;&gt;\n&lt;div class=&quot;css-79elbk eiwoi2i3&quot;&gt;\n&lt;div class=&quot;css-12r38kx e1nkw0yb
 0&quot; data-testid=&quot;SlotPreview&quot;&gt;\n&lt;div class=&quot;css-8cghab e1nkw0yb2&quot;&gt;\n&lt;p clas
 s=&quot;css-xvzn5v e1nkw0yb3&quot; data-testid=&quot;preview-slot__time&quot;&gt;11:30 AM&amp;nbsp\;-
 &amp;nbsp\;12:00 PM&lt;/p&gt;\n&lt;p class=&quot;css-bh5t0l e1nkw0yb4&quot;&gt;&lt;strong&gt;Nano Journal 
 Club&lt;/strong&gt;&lt;/p&gt;\n&lt;div class=&quot;css-1hp63re e1nkw0yb5&quot; data-testid=&quot;preview
 -slot__hosts-area&quot;&gt;\n&lt;div class=&quot;css-1b4fguo e1gn0wf40&quot; data-testid=&quot;host-
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  e1nkw0yb7&quot; data-testid=&quot;preview-slot__description&quot;&gt;The following paper wi
 ll be discussed: &quot;Challenges for Nanoscale CMOS Logic Based on 2D Material
 s&quot;&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div class=&quot;css-1hcum5r e1nkw0yb0&quot; data-testid=&quot;
 SlotPreview&quot;&gt;\n&lt;div class=&quot;css-nlrmv2 e1nkw0yb2&quot;&gt;\n&lt;p class=&quot;css-xvzn5v e1
 nkw0yb3&quot; data-testid=&quot;preview-slot__time&quot;&gt;12:00 PM&amp;nbsp\;-&amp;nbsp\;12:10 PM&lt;
 /p&gt;\n&lt;p class=&quot;css-bh5t0l e1nkw0yb4&quot;&gt;&lt;strong&gt;Introduction\; Announcements 
 and Speaker Introduction&lt;/strong&gt;&lt;/p&gt;\n&lt;div class=&quot;css-1hp63re e1nkw0yb5&quot; 
 data-testid=&quot;preview-slot__hosts-area&quot;&gt;\n&lt;div class=&quot;css-1b4fguo e1gn0wf40
 &quot; data-testid=&quot;host-preview__wrapper&quot;&gt;\n&lt;p class=&quot;css-w1w60 e1gn0wf42&quot;&gt;Gle
 nn Friedman&lt;/p&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div class=&quot;css-6pdkla e1
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 nbsp\;-&amp;nbsp\;12:55 PM&lt;/p&gt;\n&lt;p class=&quot;css-bh5t0l e1nkw0yb4&quot;&gt;&lt;strong&gt;Semina
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 p class=&quot;css-bh5t0l e1nkw0yb4&quot;&gt;&lt;strong&gt;Q &amp;amp\; A&lt;/strong&gt;&lt;/p&gt;\n&lt;/div&gt;\n&lt;/
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END:VEVENT
END:VCALENDAR

