BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Denver BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0700 TZOFFSETTO:-0600 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:MDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20231105T010000 TZOFFSETFROM:-0600 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:MST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230427T213842Z UID:29693154-D047-4D8A-A665-E9D23C11A12F DTSTART;TZID=America/Denver:20230427T115500 DTEND;TZID=America/Denver:20230427T130000 DESCRIPTION:Two-dimensional materials hold great promise for future nanoele ctronics. Their atomic thickness enables highly scaled field-effect transi stors with reduced short-channel effects and relatively high carrier mobil ity. In this presentation\, the electrical and optical properties of 2D tr ansition metal\ndichalcogenides (TMDs such as MoS 2 \, WSe 2 \, ReSe 2 \, PtSe 2 \, and PdSe 2 )\, GeAs\, and black phosphorus are discussed.\n\nThe intrinsic electrical transport properties of 2D materials are commonly in vestigated using back-gated field-effect transistors\, due to the low dens ity of process-induced defects and the easy fabrication. Electrical transp ort\, modulation of the conductivity by a back-gate\, effect of electron i rradiation\, environmental pressure and surface adsorbates\, and photoresp onse are investigated in TMD nanosheets obtained by either mechanical exfo liation or chemical vapor deposition on SiO 2 /Si substrates.\n\nIt is sho wn that the contact resistance can be tuned by electron irradiation\, whic h reduces the Schottky barrier and improves the 2D material/metal contact. It is demonstrated that adsorbates can change the polarity of the charge carriers and enhance the hysteresis in the transfer characteristics of TMD -based field-effect transistors. It is reported that several 2D materials exhibit strong photoresponse due to their direct bandgap and density of st ates that favour the interaction with light. Time-resolved photocurrent me asurements demonstrate that many 2D based devices exhibit slow or persiste nt photoresponse that is attributed to intrinsic or extrinsic trap states\ , photobolometric effect and desorption of adsorbates. It is highlighted h ow positive and negative photoconductivity can coexist in the same 2D-base d device\, the dominance of one type over the other being controlled by O 2 and H 2 O adsorbates. The strong dependence of the channel conductance o n electrical stress\, air pressure\, gas type\, and light make 2D material s-based devices suitable for memory\, gas\, and light sensing applications . Finally\, as the tunable conductivity and the sharp-edge geometry facili tate the extraction of electrons under the application of an electric fiel d\, it is proved that several 2D materials are also effective field emitte rs and that their emission current can be modulated by a back-gate.\n\nVir tual: https://events.vtools.ieee.org/m/358495 LOCATION:Virtual: https://events.vtools.ieee.org/m/358495 ORGANIZER:pi-boson@ieee.org SEQUENCE:3 SUMMARY:NTC DL: 2D materials-based nanotransistors URL;VALUE=URI:https://events.vtools.ieee.org/m/358495 X-ALT-DESC:Description: <br /><p>Two-dimensional materials hold great promi se for future nanoelectronics. Their atomic thickness enables highly scale d field-effect transistors with reduced short-channel effects and relative ly high carrier mobility.&nbsp\; In this presentation\, the electrical and optical properties of 2D transition metal<br />dichalcogenides (TMDs such as MoS 2 \, WSe 2 \, ReSe 2 \, PtSe 2 \, and PdSe 2 )\, GeAs\, and black phosphorus are discussed.</p>\n<p>The intrinsic electrical transport prope rties of 2D materials are commonly investigated using back-gated field-eff ect transistors\, due to the low density of process-induced defects and th e easy fabrication. Electrical transport\, modulation of the conductivity by a back-gate\, effect of electron irradiation\, environmental pressure a nd surface adsorbates\, and photoresponse are investigated in TMD nanoshee ts obtained by either mechanical exfoliation or chemical vapor deposition on SiO 2 /Si substrates.</p>\n<p>It is shown that the contact resistance c an be tuned by electron irradiation\, which reduces the Schottky barrier a nd improves the 2D material/metal contact.&nbsp\; It is demonstrated that adsorbates can change the polarity of the charge carriers and enhance the hysteresis in the transfer characteristics of TMD-based field-effect trans istors. It is reported that several 2D materials exhibit strong photorespo nse due to their direct bandgap and density of states that favour the inte raction with light. Time-resolved photocurrent measurements demonstrate th at many 2D based devices exhibit slow or persistent photoresponse that is attributed to intrinsic or extrinsic trap states\, photobolometric effect and desorption of adsorbates. It is highlighted how positive and negative photoconductivity can coexist in the same 2D-based device\, the dominance of one type over the other being controlled by O 2 and H 2 O adsorbates. T he strong dependence of the channel conductance on electrical stress\, air pressure\, gas type\, and light make 2D materials-based devices suitable for memory\, gas\, and light sensing applications. Finally\, as the tunabl e conductivity and the sharp-edge geometry facilitate the extraction of el ectrons under the application of an electric field\, it is proved that sev eral 2D materials are also effective field emitters and that their emissio n current can be modulated by a back-gate.</p> END:VEVENT END:VCALENDAR