BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Kolkata BEGIN:STANDARD DTSTART:19451014T230000 TZOFFSETFROM:+0630 TZOFFSETTO:+0530 TZNAME:IST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230826T075648Z UID:B78C6591-7FB8-477F-B90F-18A7FCE462A5 DTSTART;TZID=Asia/Kolkata:20230412T110000 DTEND;TZID=Asia/Kolkata:20230413T003000 DESCRIPTION:IEEE ANITS Electron Devices Society Student Branch Chapter (SBC 03871H) has been approved by IEEE on Feb 14th 2023 and the chapter was ina ugurated on 12th April 2023 by the Chief Guest Dr. D. Nirmal\, Vice-Chair\ , IEEE EDS Region 10(Asia & Pacific)\, Prof. B. Jagadeesh\, HOD\, ECE\, AN ITS\, Dr. P. Murugapandiyan\, Advisor\, IEEE EDS Chapter\, ANITS\, Dr. Ush a Bala\, IEEE Student branch counsellor\, ANITS.\n\nThe basic objective of opening this branch under ANITS has been to further open different Societ y Chapters in various departments of the ANITS thereby involving all Bache lor\, Master and Doctoral students and faculty in IEEE activities and awar eness through conduction of Technical Seminars\, Workshops\, Conferences\, and other technical & cultural activities leading to promotion of IEEE an d advancement of technology in right perspective. At present there are mor e than 35 IEEE Student Members and more than 12 Professional members under the Electronics and Communication Engineering branch\, ANITS.\n\nInaugura l Session (11:00AM – 11:30AM)\n\nThe inaugural ceremony commenced with t he lightning of the lamp (Virtually) by the dignitaries- Chief Guest Dr. D . Nirmal\, Vice-Chair\, IEEE EDS Region 10(Asia & Pacific)\, Prof. B. Jaga deesh\, HOD\, ECE\, ANITS\, Dr. P. Murugapandiyan\, Advisor\, IEEE EDS Cha pter\, ANITS\, Dr. Usha Bala\, IEEE Student branch counsellor\, ANITS\, wh o graced the occasion.\n\nThe function began with a welcome speech by Prof . B. Jagadeesh\, HOD\, ECE\, ANITS. He welcomed – Chief guest Dr. D. Nir mal\, all the IEEE student members\, and IEEE professional members. He sai d that we have opened IEEE EDS chapter under the ECE branch and discussed the benefits of IEEE Membership and facilities of Electron Device Society. He thanked Dr. D. Nirmal on behalf of ANITS for accepting the invitation for the Chief guest of Inaugural Program and a Distinguished speaker. He e xpressed his special thanks to management of ANITS for extending financial support in organizing various activities. Lastly\, he thanked to Dr. Usha Bala and Dr. P. Murugapandiyan for their cooperation and support from pla nning to execution of the activities under the student branch.\n\nDr. P. M urugapandiyan\, Advisor\, IEEE EDS Chapter\, ANITS\, briefly introduced th e chief guest and gave complete information about IEEE student branch acti vity plan. He also motivated the students towards IEEE membership and prov ided the guidance towards how to take the IEEE membership. He said that ED S has many things for its members-- scientific publisher\, technical confe rence sponsor\, networking resource-- but at its core EDS is a community o f learning. From undergraduate students to PhD candidates and world-renown ed researchers\, EDS provides device engineers from across the spectrum en gaging and enriching educational opportunities. He further said\, EDS chap ter will conduct technical Poster presentation\, technical seminars\, proj ect exhibition\, National/International workshops\, and ethics competition s and many more. He told about student fellowships that each year at least three PhD and Masters Fellowships are awarded with prizes ranging from $5 K (PhD) and $2K (Masters) per awardee. Lastly\, he expressed his best wish es for success of the technical seminar on “Trending Power Semiconductor Devices”.\n\nChief guest Dr. D. Nirmal\, congratulated to Prof. B. Jaga deesh & his team for their successful attempt to establish an IEEE EDS Stu dent Branch chapter at the ANITS and wished them the best for the further events. He told about some hot topics for research in electronics i.e. ele ctronics in biomedical\, green electronics\, optical circuits and mobile c ommunication. He encouraged the participants to avail utmost benefit from the technical seminar and explore themselves in the respective research ar eas.\n\nChief guest Dr. D. Nirmal delivered the inaugural address. He said that the IEEE Electron Devices Society (EDS) is one of the technical soci eties & councils that you can join as an IEEE member. He said that the IEE E Electron Devices Society was initially formed as the Institute of Radio Engineers (IRE) Electron Tubes and Solid-State Devices Committee in 1951\, and quickly became a professional group: in March 1952 it was called the IRE Professional Group on Electron Devices. After IRE's merger with AIEE i n 1963\, the group became the IEEE Professional Technical Group on Electro n Devices\, which merged with the Solid-State Devices Committee in 1963 an d with the New Energy Sources Committee in 1964\, becoming the IEEE Electr on Devices Group. In 1976 the group changed its name to the IEEE Electron Devices Society. He said that EDS now has about 11\,000 members and chapte rs worldwide\, sponsors many technical periodicals\, provides support for technical meetings\, and has its own business office. He also briefed abou t EDS mission fund. In his speech he talked about the “William Shockley ” who was an American physicist and inventor. Shockley was the manager o f a research group at Bell Labs that included John Bardeen and Walter Brat tain. The three scientists invented the point-contact transistor in 1947 a nd were jointly awarded the 1956 Nobel Prize in Physics. Lastly\, he wishe d Electron Device Society chapter of ANITS the very best in all its endeav ors.\n\nTechnical seminar on “Trending Power Semiconductor Devices” (1 1.30 AM to 12.30 PM)\n\nProf. D. Nirmal started the session on Trending Po wer semiconductor Device in which he discussed about various power semicon ductor devices for present and future power electronics applications. He a lso discussed that the First Junction Transistor was invented by W.B. Shoc kley in 1951. He gave an insight about some major milestones of semiconduc tor devices and he also explained the Evolution of VLSI. He also explained that the designers of modern integrated circuitry have continuously attem pted to provide more computational speed\, with less dissipated electrical power\, with less circuit board area\, while maintaining a low failure ra te\, and an aggressive cost. He discussed the Comparison of Semiconductor Properties. He gave some glimpse on Integrated Circuit (IC) types of IC i. e.\, Monolithic IC and Hybrid IC.\n\nHe told some of the important feature s of GaN-High electron mobility transistors for future RF and power switch ing applications. He talked about the Various Engineered Device Structures i.e. Lateral Channel Engineered Structures\, Work-Function Engineered Str uctures and Gate- Oxide Engineered Structures. He also talked about how su bstrate engineering impacts the GaN-HEMTs performance. He concluded diamon d substrate is the best choice for GaN HEMTs to achieve better performance and good thermal dissipation. He concluded the session saying that InAlN/ GaN HEMTs are providing better RF performance than conventional AlGaN/GaN HEMTs.\n\nDr. P. Murugapandiyan Dr. B. Jagadeesh\n\nAdvisor\, IEEE EDS Cha pter\, ANITS. Professor & Head\, ECE\, ANITS.\n\nAgenda: \n- To familiariz e IEEE Electron Device Society features and functions.\n- To familiarize t rending power semiconductor devices for present and future high power swit ching applications.\n\nVirtual: https://events.vtools.ieee.org/m/361384 LOCATION:Virtual: https://events.vtools.ieee.org/m/361384 ORGANIZER:murugavlsi@gmail.com SEQUENCE:20 SUMMARY:Inaugural ceremony of IEEE ANITS Electron Devices Society Student B ranch Chapter (SBC) & Technical seminar on Trending Power Semiconductor De vices URL;VALUE=URI:https://events.vtools.ieee.org/m/361384 X-ALT-DESC:Description: <br /><p>IEEE ANITS Electron Devices Society Studen t Branch Chapter (SBC03871H) has been approved by IEEE on Feb 14<sup>th</s up> 2023 and the chapter was inaugurated on 12<sup>th</sup> April 2023 by the Chief Guest Dr. D. Nirmal\, Vice-Chair\, IEEE EDS Region 10(Asia &amp\ ; Pacific)\, Prof. B. Jagadeesh\, HOD\, ECE\, ANITS\, Dr. P. Murugapandiya n\, Advisor\, IEEE EDS Chapter\, ANITS\, Dr. Usha Bala\, IEEE Student bran ch counsellor\, ANITS.</p>\n<p>The basic objective of opening this branch under ANITS has been to further open different Society Chapters in various departments of the ANITS thereby involving all Bachelor\, Master and Doct oral students and faculty in IEEE activities and awareness through conduct ion of Technical Seminars\, Workshops\, Conferences\, and other technical &amp\; cultural activities leading to promotion of IEEE and advancement of technology in right perspective. At present there are more than 35 IEEE S tudent Members and more than 12 Professional members under the Electronics and Communication Engineering branch\, ANITS.</p>\n<p><strong><u>Inaugura l Session (11:00AM &ndash\; 11:30AM) </u></strong></p>\n<p>&nbsp\;</p>\n<p >The inaugural ceremony commenced with the <strong>lightning of the lamp ( Virtually) </strong>by the dignitaries- <strong>Chief Guest </strong>Dr. D . Nirmal\, Vice-Chair\, IEEE EDS Region 10(Asia &amp\; Pacific)\, Prof. B. Jagadeesh\, HOD\, ECE\, ANITS\, Dr. P. Murugapandiyan\, Advisor\, IEEE ED S Chapter\, ANITS\, Dr. Usha Bala\, IEEE Student branch counsellor\, ANITS \, who graced the occasion.</p>\n<p>The function began with a welcome spee ch by Prof. B. Jagadeesh\, HOD\, ECE\, ANITS. He welcomed &ndash\; <strong >Chief guest</strong> Dr. D. Nirmal\, all the IEEE student members\, and I EEE professional members. He said that we have opened IEEE EDS chapter und er the ECE branch and discussed the benefits of IEEE Membership and facili ties of Electron Device Society. He thanked Dr. D. Nirmal on behalf of ANI TS for accepting the invitation for the Chief guest of Inaugural Program a nd a Distinguished speaker. He expressed his special thanks to management of ANITS for extending financial support in organizing various activities. Lastly\, he thanked to Dr. Usha Bala and Dr. P. Murugapandiyan for their cooperation and support from planning to execution of the activities under the student branch.</p>\n<p><strong>Dr. P. Murugapandiyan</strong>\, Advi sor\, IEEE EDS Chapter\, ANITS\, briefly introduced the chief guest and ga ve complete information about IEEE student branch activity plan. He also m otivated the students towards IEEE membership and provided the guidance to wards how to take the IEEE membership. He said that EDS has many things fo r its members-- scientific publisher\, technical conference sponsor\, netw orking resource-- but at its core EDS is a community of learning. From und ergraduate students to PhD candidates and world-renowned researchers\, EDS provides device engineers from across the spectrum engaging and enriching educational opportunities. He further said\, EDS chapter will conduct tec hnical Poster presentation\, technical seminars\, project exhibition\, Nat ional/International workshops\, and ethics competitions and many more. He told about student fellowships that each year at least three PhD and Maste rs Fellowships are awarded with prizes ranging from $5K (PhD) and $2K (Mas ters) per awardee. Lastly\, he expressed his best wishes for success of th e technical seminar on <strong>&ldquo\;</strong><strong>Trending Power Sem iconductor Devices&rdquo\;. </strong>&nbsp\;</p>\n<p><strong>Chief guest</ strong> Dr. D. Nirmal\, congratulated to Prof. B. Jagadeesh &amp\; his tea m for their successful attempt to establish an IEEE EDS Student Branch cha pter at the ANITS and wished them the best for the further events. He told about some hot topics for research in electronics i.e. electronics in bio medical\, green electronics\, optical circuits and mobile communication. H e encouraged the participants to avail utmost benefit from the technical s eminar and explore themselves in the respective research areas.</p>\n<p><s trong>Chief guest</strong> Dr. D. Nirmal delivered the inaugural address. He said that the IEEE Electron Devices Society (EDS) is one of the technic al societies &amp\; councils that you can join as an IEEE member. He said that the IEEE Electron Devices Society was initially formed as the Institu te of Radio Engineers (IRE) Electron Tubes and Solid-State Devices Committ ee in 1951\, and quickly became a professional group: in March 1952 it was called the IRE Professional Group on Electron Devices. After IRE's merger with AIEE in 1963\, the group became the IEEE Professional Technical Grou p on Electron Devices\, which merged with the Solid-State Devices Committe e in 1963 and with the New Energy Sources Committee in 1964\, becoming the IEEE Electron Devices Group. In 1976 the group changed its name to the IE EE Electron Devices Society. He said that EDS now has about 11\,000 member s and chapters worldwide\, sponsors many technical periodicals\, provides support for technical meetings\, and has its own business office. He also briefed about EDS mission fund. In his speech he talked about the &ldquo\; William Shockley&rdquo\; who was an American physicist and inventor. Shock ley was the manager of a research group at Bell Labs that included John Ba rdeen and Walter Brattain. The three scientists invented the point-contact transistor in 1947 and were jointly awarded the 1956 Nobel Prize in Physi cs. Lastly\, he wished Electron Device Society chapter of ANITS the very b est in all its endeavors.</p>\n<p><strong><u>Technical seminar on &ldquo\; Trending Power Semiconductor Devices&rdquo\; (11.30 AM to 12.30 PM)</u></s trong></p>\n<p>Prof. D. Nirmal started the session on Trending Power semic onductor Device in which he discussed about various power semiconductor de vices for present and future power electronics applications. He also discu ssed that the First Junction Transistor was invented by W.B. Shockley in 1 951. He gave an insight about some major milestones of semiconductor devic es and he also explained the Evolution of VLSI. He also explained that the designers of modern integrated circuitry have continuously attempted to p rovide more computational speed\, with less dissipated electrical power\, with less circuit board area\, while maintaining a low failure rate\, and an aggressive cost. He discussed the Comparison of Semiconductor Propertie s. He gave some glimpse on Integrated Circuit (IC) types of IC i.e.\, Mono lithic IC and Hybrid IC.</p>\n<p>He told some of the important features of GaN-High electron mobility transistors for future RF and power switching applications. He talked about the Various Engineered Device Structures i.e . Lateral Channel Engineered Structures\, Work-Function Engineered Structu res and Gate- Oxide Engineered Structures. He also talked about how substr ate engineering impacts the GaN-HEMTs performance. He concluded diamond su bstrate is the best choice for GaN HEMTs to achieve better performance and good thermal dissipation. He concluded the session saying that InAlN/GaN HEMTs are providing better RF performance than conventional AlGaN/GaN HEMT s.</p>\n<p>&nbsp\;</p>\n<p>&nbsp\;</p>\n<p><strong>Dr. P. Murugapandiyan&n bsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\ ;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nb sp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; &nbsp\; Dr. B. Jagadeesh</strong></p>\n<p>Advisor\, IEEE EDS Chapter\, ANI TS.&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;& nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\; Professor &amp\; H ead\, ECE\, ANITS.</p>\n<p>&nbsp\;</p>\n<p>&nbsp\;</p><br /><br />Agenda: <br /><ul>\n<li>To familiarize IEEE Electron Device Society features and f unctions.</li>\n<li>To familiarize trending power semiconductor devices fo r present and future high power switching applications.</li>\n</ul> END:VEVENT END:VCALENDAR