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DTSTAMP:20230620T193711Z
UID:8EBF1A17-B5DA-48E2-9D51-A7E2EE201975
DTSTART;TZID=America/Los_Angeles:20230619T150000
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DESCRIPTION:Abstract: Photodetectors that enable weak light detection can b
 e found in numerous applications including biomedical imaging\, chemilumin
 escence detection and scientific spectroscopy. Photomultiplier Tubes (PMTs
 )\, Avalanche Photodiodes (APDs)\, and Silicon Photomultipliers (SiPMs) or
  Single Photon Avalanche Photodiodes (SPADs) have been widely used. Howeve
 r\, bulky and power-hungry PMTs have suffered from severe temperature drif
 t and hence\, are very sensitive to ambient environment. APDs and SiPMs ar
 e compact but they have high shot noise and strong temperature dependence 
 of output. Recently\, 3-D photodetectors based on non-crystalline silicon 
 thin-film transistors were investigated and deployed for digital mammograp
 hy\, nevertheless\, their narrow dynamic range cannot meet the requirement
 s for many applications. Since 2019\, we have developed a new type of soli
 d state photodetector\, so-called photodiode-body-biased MOSFET (PD-MOS) t
 hat enjoys both high gain and wide dynamic range. Different from APDs and 
 PMTs using either avalanche or photomultiplication to achieve high gain\, 
 the high-gain mechanism in the PD-MOS lies in the photo-modulated body bia
 s effect. However\, noise and dark current are still kept high. Here\, our
  approach to high SNR is improving the gain while reducing the noise by a 
 photoelectric integrated device (PID) based on dual PD-MOSs with one dark-
 PD-MOS and the other light-PD-MOS. Furthermore\, by tuning the gate bias o
 f the light-PD-MOS\, an adjustable gain of unity to 107 is attained togeth
 er with a wide dynamic range over 160dB and a broad spectrum response from
  254nm to 1300nm. Such performance characteristics have made it a great pr
 omise for many emerging applications\, requiring low-level detection and i
 maging.\n\nSpeaker(s): Kai\, \n\nRoom: ASB 10704\, Bldg: Applied Science B
 uilding\, 8888 University Dr.\, Burnaby\, British Columbia\, Canada\, V5A 
 1S6\, Virtual: https://events.vtools.ieee.org/m/363742
LOCATION:Room: ASB 10704\, Bldg: Applied Science Building\, 8888 University
  Dr.\, Burnaby\, British Columbia\, Canada\, V5A 1S6\, Virtual: https://ev
 ents.vtools.ieee.org/m/363742
ORGANIZER:mmadachi@sfu.ca
SEQUENCE:14
SUMMARY:IEEE EDS Invited talk: “Solid State Photodetector and Image Senso
 r with Non-Avalanche Approach”
URL;VALUE=URI:https://events.vtools.ieee.org/m/363742
X-ALT-DESC:Description: <br /><p><strong>Abstract:</strong> Photodetectors 
 that enable weak light detection can be found in numerous applications inc
 luding biomedical imaging\, chemiluminescence detection and scientific spe
 ctroscopy. Photomultiplier Tubes (PMTs)\, Avalanche Photodiodes (APDs)\, a
 nd Silicon Photomultipliers (SiPMs) or Single Photon Avalanche Photodiodes
  (SPADs) have been widely used. However\, bulky and power-hungry PMTs have
  suffered from severe temperature drift and hence\, are very sensitive to 
 ambient environment. APDs and SiPMs are compact but they have high shot no
 ise and strong temperature dependence of output. Recently\, 3-D photodetec
 tors based on non-crystalline silicon thin-film transistors were investiga
 ted and deployed for digital mammography\, nevertheless\, their narrow dyn
 amic range cannot meet the requirements for many applications. Since 2019\
 , we have developed a new type of solid state photodetector\, so-called ph
 otodiode-body-biased MOSFET (PD-MOS) that enjoys both high gain and wide d
 ynamic range. Different from APDs and PMTs using either avalanche or photo
 multiplication to achieve high gain\, the high-gain mechanism in the PD-MO
 S lies in the photo-modulated body bias effect. However\, noise and dark c
 urrent are still kept high. Here\, our approach to high SNR is improving t
 he gain while reducing the noise by a photoelectric integrated device (PID
 ) based on dual PD-MOSs with one dark-PD-MOS and the other light-PD-MOS. F
 urthermore\, by tuning the gate bias of the light-PD-MOS\, an adjustable g
 ain of unity to 10<sup>7</sup> is attained together with a wide dynamic ra
 nge over 160dB and a broad spectrum response from 254nm to 1300nm. Such pe
 rformance characteristics have made it a great promise for many emerging a
 pplications\, requiring low-level detection and imaging.</p>
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