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VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:Asia/Kolkata
BEGIN:STANDARD
DTSTART:19451014T230000
TZOFFSETFROM:+0630
TZOFFSETTO:+0530
TZNAME:IST
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BEGIN:VEVENT
DTSTAMP:20230812T115013Z
UID:A685A33D-278F-451F-AF10-D247D6FBAB99
DTSTART;TZID=Asia/Kolkata:20230812T110000
DTEND;TZID=Asia/Kolkata:20230812T140000
DESCRIPTION:Compact Models (CMs) for circuit simulation have been at the he
 art of CAD tools for bridging circuit design and technology development ov
 er the past decades. In this talk\, we begin with an overview of the histo
 rical role of CMs and fundamental equations. Evolution of MOSFET CMs\, fro
 m bulk to SOI and FinFETs\, is reviewed and their inter-relationships disc
 ussed. Unification of CMs with the unified regional modeling (URM) approac
 h is presented\, together with model validation with numerical data and ve
 rification with experimental data. Model extension to III-V HEMTs includin
 g 2-dimensional electron gas (2DEG) in multiple sub-bands and trap-charge 
 effects is presented.\n\nSpeaker(s): Dr. Xing Zhou\, \n\nVirtual: https://
 events.vtools.ieee.org/m/368539
LOCATION:Virtual: https://events.vtools.ieee.org/m/368539
ORGANIZER:aray.phd2019.ece@nitrr.ac.in
SEQUENCE:3
SUMMARY:Compacting Models: The Art of Compact Modeling
URL;VALUE=URI:https://events.vtools.ieee.org/m/368539
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;Compact Models (CMs) for circuit simulatio
 n have been at the heart of CAD tools for bridging circuit design and tech
 nology development over the past decades.&amp;nbsp\; In this talk\, we begin w
 ith an overview of the historical role of CMs and fundamental equations. &amp;
 nbsp\;Evolution of MOSFET CMs\, from bulk to SOI and FinFETs\, is reviewed
  and their inter-relationships discussed.&amp;nbsp\; Unification of CMs with t
 he unified regional modeling (URM) approach is presented\, together with m
 odel validation with numerical data and verification with experimental dat
 a.&amp;nbsp\; Model extension to III-V HEMTs including 2-dimensional electron 
 gas (2DEG) in multiple sub-bands and trap-charge effects is presented.&lt;/p&gt;
 \n&lt;p&gt;&amp;nbsp\;&lt;/p&gt;\n&lt;p&gt;&amp;nbsp\;&lt;/p&gt;
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