BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20231105T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20231020T194118Z UID:E9FAA9B1-0A5A-4C7F-A6EA-D7B3F819EDA2 DTSTART;TZID=America/Los_Angeles:20231011T183000 DTEND;TZID=America/Los_Angeles:20231011T200000 DESCRIPTION:Spin-Transfer-Torque MRAM was invented at IBM by John Slonczews ki in the early 1990s. By using a spin-polarized current\, instead of a ma gnetic field\, to write a magnetic free layer in a magnetic tunnel junctio n\, the required write current naturally decreases with area\, providing a ttractive technology scaling. The discovery of high magnetoresistance in M gO tunnel barriers at IBM by Stuart Parkin\, and later independently by Sh inji Yuasa\, enabled sufficient read signal to efficiently read magnetic t unnel junctions. The discovery of perpendicular magnetic anisotropy in thi n CoFeB/MgO layers at IBM and independently by Tohoku University enabled a dramatic reduction in the switching current\, and opened the way to pract ical perpendicular magnetic tunnel junctions for dense Spin-Transfer-Torqu e MRAM.\n\nThis talk will provide an overview of Spin-Transfer-Torque MRAM \, including the three basic building blocks described above. I’ll give an introduction to the basic physics of spin-transfer torque and applicati ons of Spin-Transfer-Torque MRAM. Then I will review why perpendicular mag netic anisotropy is advantageous for MRAM compared to in-plane anisotropy\ , and the materials challenges of perpendicular anisotropy. I will discuss the research at IBM in 2009 that led to our discovery of perpendicular an isotropy in thin CoFeB/MgO layers\, and our use of these layers to make th e first practical perpendicular magnetic tunnel junctions and the first de monstration of reliable writing in Spin-Transfer-Torque MRAM. Finally I wi ll review our recent results on methods to lower the switching current of Spin-Transfer-Torque MRAM by using optimized magnetic materials and double magnetic tunnel junctions\, including our recent demonstration of reliabl e 250 ps switching.\n\nSpeaker(s): Dr. Worledge\, \n\nBldg: Quadrant\, 112 0 Ringwood Ct.\, San Jose\, California\, United States\, 95131\, Virtual: https://events.vtools.ieee.org/m/371928 LOCATION:Bldg: Quadrant\, 1120 Ringwood Ct.\, San Jose\, California\, Unite d States\, 95131\, Virtual: https://events.vtools.ieee.org/m/371928 ORGANIZER:kevinckurtz@gmail.com SEQUENCE:7 SUMMARY:Spin-Transfer-Torque MRAM: The Next Revolution in Memory URL;VALUE=URI:https://events.vtools.ieee.org/m/371928 X-ALT-DESC:Description: <br /><p>Spin-Transfer-Torque MRAM was invented at IBM by John Slonczewski in the early 1990s. By using a spin-polarized curr ent\, instead of a magnetic field\, to write a magnetic free layer in a ma gnetic tunnel junction\, the required write current naturally decreases wi th area\, providing attractive technology scaling. The discovery of high m agnetoresistance in MgO tunnel barriers at IBM by Stuart Parkin\, and late r independently by Shinji Yuasa\, enabled sufficient read signal to effici ently read magnetic tunnel junctions. The discovery of perpendicular magne tic anisotropy in thin CoFeB/MgO layers at IBM and independently by Tohoku University enabled a dramatic reduction in the switching current\, and op ened the way to practical perpendicular magnetic tunnel junctions for dens e Spin-Transfer-Torque MRAM.</p>\n<p>This talk will provide an overview of Spin-Transfer-Torque MRAM\, including the three basic building blocks des cribed above. I&rsquo\;ll give an introduction to the basic physics of spi n-transfer torque and applications of Spin-Transfer-Torque MRAM. Then I wi ll review why perpendicular magnetic anisotropy is advantageous for MRAM c ompared to in-plane anisotropy\, and the materials challenges of perpendic ular anisotropy. I will discuss the research at IBM in 2009 that led to ou r discovery of perpendicular anisotropy in thin CoFeB/MgO layers\, and our use of these layers to make the first practical perpendicular magnetic tu nnel junctions and the first demonstration of reliable writing in Spin-Tra nsfer-Torque MRAM. Finally I will review our recent results on methods to lower the switching current of Spin-Transfer-Torque MRAM by using optimize d magnetic materials and double magnetic tunnel junctions\, including our recent demonstration of reliable 250 ps switching.</p> END:VEVENT END:VCALENDAR