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DTSTAMP:20231103T003413Z
UID:442546FC-9881-42DF-B058-5B008F1F928D
DTSTART;TZID=America/Los_Angeles:20231102T140000
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DESCRIPTION:Abstract: After the first demonstration of the MOSFET in 1960 a
 t Bell Laboratories\, the understanding of its intrinsic noise mechanisms 
 quickly followed. However\, poor sensitivity of integrated lightwave recei
 vers could not be explained based on the above analyses. To understand and
  push these limits of the then nascent MOS technology\, discovery and unde
 rstanding of a host of extrinsic noise mechanisms was actively pursued at 
 Bell Labs. In this presentation\, a physical understanding of both intrins
 ic and extrinsic noise mechanisms in an IGFET is developed. Intrinsic nois
 e mechanisms fundamental to device operation include channel thermal noise
 \, induced gate noise and induced substrate noise. Non-quasi-static effect
 s that have been analytically modeled are also discussed. Extrinsic noise 
 mechanisms manifested due to structural evolution of the MOSFET include ex
 cess channel noise\, distributed gate resistance noise\, distributed subst
 rate resistance noise\, bulk charge effects\, substrate current super-shot
  noise and gate current noise. Changes in the device structure to improve 
 the noise performance by suppressing the effects of the extrinsic noise me
 chanisms will also be discussed. This work has resulted in almost an order
  of magnitude improvement in the noise performance of these devices making
  them an ideal choice for wireless and lightwave communications. MOSFET ex
 cess channel noise continues to be an active area of research.\n\nSpeaker(
 s): Renuka\, \n\nRoom: ASB 10704\, Bldg: Applied Science Building\, 8888 U
 niversity Dr.\, Burnaby\, British Columbia\, Canada\, V5A 1S6\, Virtual: h
 ttps://events.vtools.ieee.org/m/371969
LOCATION:Room: ASB 10704\, Bldg: Applied Science Building\, 8888 University
  Dr.\, Burnaby\, British Columbia\, Canada\, V5A 1S6\, Virtual: https://ev
 ents.vtools.ieee.org/m/371969
ORGANIZER:mmadachi@sfu.ca
SEQUENCE:19
SUMMARY:IEEE EDS Distinguished Lecturer Talk: “Noise Performance challeng
 es for MOS devices at nanoscale”
URL;VALUE=URI:https://events.vtools.ieee.org/m/371969
X-ALT-DESC:Description: <br /><p><strong>Abstract:</strong> After the first
  demonstration of the MOSFET in 1960 at Bell Laboratories\, the understand
 ing of its intrinsic noise mechanisms quickly followed. However\, poor sen
 sitivity of integrated lightwave receivers could not be explained based on
  the above analyses. To understand and push these limits of the then nasce
 nt MOS technology\, discovery and understanding of a host of extrinsic noi
 se mechanisms was actively pursued at Bell Labs. In this presentation\, a 
 physical understanding of both intrinsic and extrinsic noise mechanisms in
  an IGFET is developed. Intrinsic noise mechanisms fundamental to device o
 peration include channel thermal noise\, induced gate noise and induced su
 bstrate noise. Non-quasi-static effects that have been analytically modele
 d are also discussed. Extrinsic noise mechanisms manifested due to structu
 ral evolution of the MOSFET include excess channel noise\, distributed gat
 e resistance noise\, distributed substrate resistance noise\, bulk charge 
 effects\, substrate current super-shot noise and gate current noise. Chang
 es in the device structure to improve the noise performance by suppressing
  the effects of the extrinsic noise mechanisms will also be discussed. Thi
 s work has resulted in almost an order of magnitude improvement in the noi
 se performance of these devices making them an ideal choice for wireless a
 nd lightwave communications.&nbsp\; MOSFET excess channel noise continues 
 to be an active area of research.</p>
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