BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:America/New_York
BEGIN:DAYLIGHT
DTSTART:20230312T030000
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3
TZNAME:EDT
END:DAYLIGHT
BEGIN:STANDARD
DTSTART:20231105T010000
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11
TZNAME:EST
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20231003T163417Z
UID:95B589B6-BF85-4C57-877F-FD71BC273D52
DTSTART;TZID=America/New_York:20230925T090500
DTEND;TZID=America/New_York:20230925T095000
DESCRIPTION:Silicon Carbide (SiC) devices are gaining popularity in many ap
 plications due to their superior performance in harsh operating environmen
 ts. These devices enable power electronics to operate at higher switching 
 frequencies\, voltages\, and temperatures. The use of SiC power devices in
  high-power aerospace applications has been gaining momentum in recent yea
 rs due to their distinct benefits in power management\, distribution\, con
 version\, and motor control applications. Employing these advanced devices
  in aerospace applications enables the industry to develop lighter\, more 
 compact\, efficient\, and reliable products\, leading to aircraft design w
 ith improved performance and reliability under all operating conditions. H
 owever\, there are significant challenges associated with the use of SiC p
 ower devices in an aerospace environment. The design team must consider th
 e need for complex and specialized circuitry\, sophisticated thermal manag
 ement techniques\, device compatibility issues\, and long-term reliability
  concerns. With continued technological advancements addressing these chal
 lenges\, the use of SiC power devices in aerospace products is expected to
  increase significantly in the coming years.\n\nSpeaker(s): MH Hamdan\, \n
 \nRoom: GC Ball room\, Graham Center-Ball Room\, FIU located at 11200  SW 
 8th St.\, Miami\, Florida 33174\, Miami\, Florida\, United States\, 33174
LOCATION:Room: GC Ball room\, Graham Center-Ball Room\, FIU located at 1120
 0  SW 8th St.\, Miami\, Florida 33174\, Miami\, Florida\, United States\, 
 33174
ORGANIZER:Mohammed@fiu.edu
SEQUENCE:12
SUMMARY:The Development and Use of SiC Power Devices in Aerospace Applicati
 ons
URL;VALUE=URI:https://events.vtools.ieee.org/m/374397
X-ALT-DESC:Description: <br /><p>Silicon Carbide (SiC) devices are gaining 
 popularity in many applications due to their superior performance in harsh
  operating environments.&nbsp\; These devices enable power electronics to 
 operate at higher switching frequencies\, voltages\, and temperatures. The
  use of SiC power devices in high-power aerospace applications has been ga
 ining momentum in recent years due to their distinct benefits in power man
 agement\, distribution\, conversion\, and motor control applications.&nbsp
 \; Employing these advanced devices in aerospace applications enables the 
 industry to develop lighter\, more compact\, efficient\, and reliable prod
 ucts\, leading to aircraft design with improved performance and reliabilit
 y under all operating conditions. However\, there are significant challeng
 es associated with the use of SiC power devices in an aerospace environmen
 t. The design team must consider the need for complex and specialized circ
 uitry\, sophisticated thermal management techniques\, device compatibility
  issues\, and long-term reliability concerns. With continued technological
  advancements addressing these challenges\, the use of SiC power devices i
 n aerospace products is expected to increase significantly in the coming y
 ears.</p>
END:VEVENT
END:VCALENDAR