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DTSTART:20231105T010000
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DTSTAMP:20231028T232009Z
UID:EB7BA9F8-F20C-48CE-8A20-E923B0DAB190
DTSTART;TZID=America/New_York:20231018T180000
DTEND;TZID=America/New_York:20231018T200000
DESCRIPTION:Gallium nitride (GaN) power devices have only recently become c
 ommercially available. The new devices enable the design of converters at 
 higher frequencies and efficiencies than those achievable with conventiona
 l Si devices. This webinar will review the characteristics and figures of 
 marit of different types GaN devices enhancement and depletion mode and wi
 ll give the status of vertical GaN power devices. In addition\, the challe
 nges encountered in GaN-based converter design are considered\, such as th
 e consequences of faster switching on gate driver design and board layout.
  Other issues such as unique reverse conduction behavior\, dynamic RDS_ON\
 , breakdown mechanisms\, thermal design\, device availability\, and reliab
 ility qualification will be also discussed.\n\nCo-sponsored by: IEEE Montr
 eal Section\n\nSpeaker(s): Tanya\, \n\nAgenda: \nAdmission: Free for IEEE 
 members. Prospective members: $5 -pay if you can / wish.\n\nP\;enty of hea
 lthier snacks & refreshments will be served (thus the ask to pre-register 
 soiup we have a good amount)\n\nRoom: T129\, Bldg: T (Technology)\, 1385 W
 oodroffe Ave. \, Ottawa\, Ontario\, Canada
LOCATION:Room: T129\, Bldg: T (Technology)\, 1385 Woodroffe Ave. \, Ottawa\
 , Ontario\, Canada
ORGANIZER:raedabdullah@ieee.org
SEQUENCE:5
SUMMARY:Current Status and Future Prospects of GaN Power HEMTs 
URL;VALUE=URI:https://events.vtools.ieee.org/m/376663
X-ALT-DESC:Description: <br /><p>Gallium nitride (GaN) power devices have o
 nly recently become commercially available. The new devices enable the des
 ign of converters at higher frequencies and efficiencies than those achiev
 able with conventional Si devices. This webinar will review the characteri
 stics and figures of marit of different types GaN devices enhancement and 
 depletion mode and will give the status of vertical GaN power devices. In 
 addition\, the challenges encountered in GaN-based converter design are co
 nsidered\, such as the consequences of faster switching on gate driver des
 ign and board layout. Other issues such as unique reverse conduction behav
 ior\, dynamic R<sub>DS_ON</sub>\, breakdown mechanisms\, thermal design\, 
 device availability\, and reliability qualification will be also discussed
 .</p><br /><br />Agenda: <br /><p><strong>Admission:&nbsp\;&nbsp\;&nbsp\; 
 </strong>Free for IEEE members.&nbsp\; Prospective members:&nbsp\; $5&nbsp
 \; -pay if you can / wish.&nbsp\;</p>\n<p>P\;enty of healthier snacks &amp
 \; refreshments will be served (thus the ask to pre-register soiup we have
  a good amount)</p>
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