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PRODID:IEEE vTools.Events//EN
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DTSTART:20380119T001407
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DTSTART:20150308T010000
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BEGIN:VEVENT
DTSTAMP:20231024T183056Z
UID:18385656-90EA-4B3B-B138-A36A94282DF6
DTSTART;TZID=America/Montevideo:20231019T083000
DTEND;TZID=America/Montevideo:20231019T100000
DESCRIPTION:In this talk\, we analyze the dependence of the Weibull slope (
 β) extracted from TDDB tests on HfO2 MOS capacitors (MOSCAPs) on the init
 ial density of defects artificially induced by carefully tuned micro beam 
 irradiation experiments with different carbon dosages. The consistent expe
 rimental trend of reducing β with increasing defect density was reproduci
 ble only with physics-based breakdown simulations that considered correlat
 ed defect generation in HfO2 and localized damage (partial percolation pat
 hs) traces created by the impinging ions. Scenarios of spatially random in
 itial defect distribution and random stressinduced defect generation (in s
 pace and time) could not explain the experimental trends\, confirming that
  correlated defect generation does exist in HfO2 thereby altering the conv
 entional understanding of TDDB by quite a bit.\n\nCo-sponsored by: Grupo d
 e Microelectrónica\, Facultad de Ingeniería\, Universidad de la Repúbli
 ca\n\nSpeaker(s): Félix Palumbo\n\nRoom: Laboratorio de Software del IIE\
 , Bldg: Facultad de Ingeniería\, Julio Herrera y Reissig 565\, Montevideo
 \, Montevideo\, Uruguay
LOCATION:Room: Laboratorio de Software del IIE\, Bldg: Facultad de Ingenier
 ía\, Julio Herrera y Reissig 565\, Montevideo\, Montevideo\, Uruguay
ORGANIZER:msiniscalchi@fing.edu.uy
SEQUENCE:16
SUMMARY:Spatio-Temporal Defect Generation Process in high/k dielectric laye
 rs: Correlated versus Uncorrelated Mechanisms
URL;VALUE=URI:https://events.vtools.ieee.org/m/378365
X-ALT-DESC:Description: <br /><p>In this talk\, we analyze the dependence o
 f the Weibull slope (&beta\;) extracted from TDDB tests on HfO2 MOS capaci
 tors (MOSCAPs) on the initial density of defects artificially induced by c
 arefully tuned micro beam irradiation experiments with different carbon do
 sages. The consistent experimental trend of reducing &beta\; with increasi
 ng defect density was reproducible only with physics-based breakdown simul
 ations that considered correlated defect generation in HfO2 and localized 
 damage (partial percolation paths) traces created by the impinging ions. S
 cenarios of spatially random initial defect distribution and random stress
 induced defect generation (in space and time) could not explain the experi
 mental trends\, confirming that correlated defect generation does exist in
  HfO2 thereby altering the conventional understanding of TDDB by quite a b
 it.</p>
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