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DTSTAMP:20231017T063009Z
UID:276A6A28-CE44-46D1-AFC1-CB23A58C109D
DTSTART;TZID=Europe/Zurich:20231010T110000
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DESCRIPTION:Power electronics is one of the key enabling technologies to ac
 hieve the goals of “Zero-Emission” transportation and high penetration
  renewables in the power grid. The wide bandgap (WBG) devices\, and in par
 ticular SiC MOSFET devices\, are transforming medium-voltage (MV) power co
 nversion and control\, presenting significant research opportunities. For 
 example\, the application of SiC devices can reduce or eliminate the need 
 for interface harmonics filter in grid-tied inverters\, however\, leads to
  control challenges and worsens EMI. The SiC motor drives\, while achievin
 g higher efficiency and power density\, can result in more serious reflect
 ive wave phenomena leading to machine insulation failure.\n\nAdditionally\
 , driving SiC devices\, especially MV SiC devices\, remains a challenge. I
 n this presentation\, the speaker will introduce her group’s research wo
 rk to address these challenges in the last decade using different approach
 es compared to state-of- the-art methods. An overview of the Center for Ad
 vanced Power System at Florida State University will also be introduced in
  this presentation.\n\nSpeaker(s): \, Prof. Hui "Helen" Li\n\nBldg: ELH-11
 4\, EPFL\, Lausanne\, Switzerland\, Switzerland\, 1015
LOCATION:Bldg: ELH-114\, EPFL\, Lausanne\, Switzerland\, Switzerland\, 1015
ORGANIZER:drazen.dujic@epfl.ch
SEQUENCE:7
SUMMARY:SiC Power Electronics for Grid and Transportation Applications
URL;VALUE=URI:https://events.vtools.ieee.org/m/379246
X-ALT-DESC:Description: <br /><p>Power electronics is one of the key enabli
 ng technologies to achieve the goals of &ldquo\;Zero-Emission&rdquo\; tran
 sportation and high penetration renewables in the power grid. The wide ban
 dgap (WBG) devices\, and in particular SiC MOSFET devices\, are transformi
 ng medium-voltage (MV) power conversion and control\, presenting significa
 nt research opportunities. For example\, the application of SiC devices ca
 n reduce or eliminate the need for interface harmonics filter in grid-tied
  inverters\, however\, leads to control challenges and worsens EMI. The Si
 C motor drives\, while achieving higher efficiency and power density\, can
  result in more serious reflective wave phenomena leading to machine insul
 ation failure.</p>\n<p>Additionally\, driving SiC devices\, especially MV 
 SiC devices\, remains a challenge. In this presentation\, the speaker will
  introduce her group&rsquo\;s research work to address these challenges in
  the last decade using different approaches compared to state-of- the-art 
 methods. An overview of the Center for Advanced Power System at Florida St
 ate University will also be introduced in this presentation.</p>
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