BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Chicago BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0600 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:CDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20231105T010000 TZOFFSETFROM:-0500 TZOFFSETTO:-0600 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20231021T173045Z UID:A080FA03-7FC9-4FFE-8C42-D4832879FACB DTSTART;TZID=America/Chicago:20231020T110000 DTEND;TZID=America/Chicago:20231020T120000 DESCRIPTION:Zoom link: https://argonne.zoomgov.com/j/1616096375?pwd=QllQWSt YbWk1dGZUWmdTNzhzY3NxUT09\n\nSpeaker: Professor Pedram Khalili\n\nDepartme nt of Electrical and Computer Engineering\nNorthwestern University\, Evans ton\, IL\, USA\n\nDate: Friday\, October 20\, 2023\nTime: 11:00 AM CDT\n\n Abstract\n\nThe emergence of embedded magnetic random-access memory (MRAM) provides an unprecedented opportunity to develop unconventional computing architectures\, which go far beyond using MRAM as a mere replacement for existing memory solutions (e.g.\, embedded Flash or SRAM).\n\nThis talk wi ll consist of two parts: First\, we review the current state of developmen t of ferromagnet-based MRAM\, which uses current-induced spin-transfer tor que (STT) to switch the magnetic state. We then discuss how emerging devic e concepts based on new physics and new materials may enable significant a dvances beyond today’s STT-MRAM: (i) As an example of new materials\, we examine memory devices based on antiferromagnetic (AFM) materials\, which may offer advantages such as picosecond switching\, improved scalability\ , and immunity to external magnetic fields. We review recent progress in m anipulating the Néel vector of such materials by current-induced spin-orb it torque (SOT) [1-3] and discuss perspectives for their further developme nt. (ii) As an example of new physics\, we discuss electric-field-controll ed MRAM devices that utilize the voltage-controlled magnetic anisotropy (V CMA) effect for switching\, and present recent results on developing the f irst VCMA-MRAM devices with sub-1V write voltage [4\, 5].\n\nSecond\, we w ill discuss how appropriately designed stochastic MRAM cells with low rete ntion time can be used to fulfill unconventional roles within a computing system [5\, 6]\, notably as electrically controlled stochastic bitstream ( SBS) generators. We then discuss the application of such MRAM-based SBS ge nerators to true random number generation and stochastic computing (SC)\, and present our recent results on the implementation of an SC-based artifi cial neural networks [6] and physically unclonable functions [5] using a s eries of stochastic MRAM cells. Finally\, we then show examples of how a n etwork of stochastic MRAM bits with appropriately designed control/readout circuitry – referred to as probabilistic (p-) bits – can be used to s olve difficult optimization problems.\n\n[1] J. Shi et al.\, Nature Electr onics 3\, 92 (2020)\n\n[2] S. Arpaci et al.\, Nature Communications 12\, 3 828 (2021)\n\n[3] Z. Zheng et al.\, Nature Communications 12\, 4555 (2021) \n\n[4] Y. Shao et al.\, Communications Materials 3\, 87 (2022)\n\n[5] Y. Shao et al.\, Advanced Electronic Materials\, 2300195 (2023)\n\n[6] Y. Sha o et al.\, IEEE Magnetics Letters 12\, 4501005 (2021)\n\nBiography:\n\nPed ram Khalili is Associate Professor of Electrical and Computer Engineering at Northwestern University\, where he is also affiliated with the Applied Physics program. Prior to joining Northwestern\, he was an adjunct assista nt professor at the University of California\, Los Angeles. He leads resea rch programs on voltage-controlled MRAM\, antiferromagnetic spintronics\, magnonics\, and spintronics-based computing. He received the B.Sc. degree from Sharif University of Technology in 2004\, and the Ph.D. degree (cum l aude) from Delft University of Technology (TU Delft)\, The Netherlands\, i n 2008\, both in electrical engineering. Pedram received the Northwestern University ECE department's Best Teacher Award in 2020. He serves on the E ditorial Board of Journal of Physics: Photonics. He has served on the tech nical program committees and organizing committees of several conferences\ , including the Joint MMM/Intermag Conference and the SPIE Spintronics Con ference\, and is a member of the Flash Memory Summit conference advisory b oard. He has served as Chair of the Chicago Chapter of the IEEE Magnetics Society (2020-2023)\, and represents the IEEE Magnetics Society on the IEE E Task Force for Rebooting Computing (TFRC) Executive Committee. He is a S enior Member of the IEEE.\n\nCo-sponsored by: IEEE Chicago\, IEEE NTC Youn g Professionals\n\n9700 S Cass Ave\, LEMONT\, Illinois\, United States\, 6 0439\, Virtual: https://events.vtools.ieee.org/m/379651 LOCATION:9700 S Cass Ave\, LEMONT\, Illinois\, United States\, 60439\, Virt ual: https://events.vtools.ieee.org/m/379651 ORGANIZER:yili@anl.gov SEQUENCE:16 SUMMARY:(Oct. 20\, 2023)Computing with electric-field-controlled and antife rromagnetic spintronic devices URL;VALUE=URI:https://events.vtools.ieee.org/m/379651 X-ALT-DESC:Description: <br /><p>Zoom link: <a href="https://argonne.zoomgo v.com/j/1616096375?pwd=QllQWStYbWk1dGZUWmdTNzhzY3NxUT09">https://argonne.z oomgov.com/j/1616096375?pwd=QllQWStYbWk1dGZUWmdTNzhzY3NxUT09</a></p>\n<p>< strong>Speaker: Professor Pedram Khalili</strong></p>\n<p><strong>Departme nt of Electrical and Computer Engineering</strong><br /><strong>Northweste rn University\, Evanston\, IL\, USA&nbsp\;</strong></p>\n<p><strong>Date: Friday\, October 20\, 2023</strong><br /><strong>Time: 11:00 AM CDT</stron g></p>\n<p><strong>Abstract</strong></p>\n<p>The emergence of embedded mag netic random-access memory (MRAM) provides an unprecedented opportunity to develop unconventional computing architectures\, which go far beyond usin g MRAM as a mere replacement for existing memory solutions (e.g.\, embedde d Flash or SRAM).</p>\n<p>This talk will consist of two parts: First\, we review the current state of development of ferromagnet-based MRAM\, which uses current-induced spin-transfer torque (STT) to switch the magnetic sta te. We then discuss how emerging device concepts based on new physics and new materials may enable significant advances beyond today&rsquo\;s STT-MR AM: (i) As an example of new materials\, we examine memory devices based o n antiferromagnetic (AFM) materials\, which may offer advantages such as p icosecond switching\, improved scalability\, and immunity to external magn etic fields. We review recent progress in manipulating the N&eacute\;el ve ctor of such materials by current-induced spin-orbit torque (SOT) [1-3] an d discuss perspectives for their further development. (ii) As an example o f new physics\, we discuss electric-field-controlled MRAM devices that uti lize the voltage-controlled magnetic anisotropy (VCMA) effect for switchin g\, and present recent results on developing the first VCMA-MRAM devices w ith sub-1V write voltage [4\, 5].</p>\n<p>Second\, we will discuss how app ropriately designed stochastic MRAM cells with low retention time can be u sed to fulfill unconventional roles within a computing system [5\, 6]\, no tably as electrically controlled stochastic bitstream (SBS) generators. We then discuss the application of such MRAM-based SBS generators to true ra ndom number generation and stochastic computing (SC)\, and present our rec ent results on the implementation of an SC-based artificial neural network s [6] and physically unclonable functions [5] using a series of stochastic MRAM cells. Finally\, we then show examples of how a network of stochasti c MRAM bits with appropriately designed control/readout circuitry &ndash\; referred to as probabilistic (p-) bits &ndash\; can be used to solve diff icult optimization problems.</p>\n<p>[1] J. Shi et al.\, <em>Nature Electr onics</em> 3\, 92 (2020)</p>\n<p>[2] S. Arpaci et al.\, <em>Nature Communi cations</em> 12\, 3828 (2021)</p>\n<p>[3] Z. Zheng et al.\, <em>Nature Com munications</em> 12\, 4555 (2021)</p>\n<p>[4] Y. Shao et al.\, <em>Communi cations Materials</em> 3\, 87 (2022)</p>\n<p>[5] Y. Shao et al.\, <em>Adva nced Electronic Materials</em>\, 2300195 (2023)</p>\n<p>[6] Y. Shao et al. \, <em>IEEE Magnetics Letters</em> 12\, 4501005 (2021)</p>\n<p><strong>Bio graphy: </strong></p>\n<p>Pedram Khalili is Associate Professor of Electri cal and Computer Engineering at Northwestern University\, where he is also affiliated with the Applied Physics program. Prior to joining Northwester n\, he was an adjunct assistant professor at the University of California\ , Los Angeles. He leads research programs on voltage-controlled MRAM\, ant iferromagnetic spintronics\, magnonics\, and spintronics-based computing. He received the B.Sc. degree from Sharif University of Technology in 2004\ , and the Ph.D. degree (<em>cum laude</em>) from Delft University of Techn ology (TU Delft)\, The Netherlands\, in 2008\, both in electrical engineer ing. Pedram received the Northwestern University ECE department's Best Tea cher Award in 2020. He serves on the Editorial Board of Journal of Physics : Photonics. He has served on the technical program committees and organiz ing committees of several conferences\, including the Joint MMM/Intermag C onference and the SPIE Spintronics Conference\, and is a member of the Fla sh Memory Summit conference advisory board. He has served as Chair of the Chicago Chapter of the IEEE Magnetics Society (2020-2023)\, and represents the IEEE Magnetics Society on the IEEE Task Force for Rebooting Computing (TFRC) Executive Committee. He is a Senior Member of the IEEE.</p> END:VEVENT END:VCALENDAR