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DTSTAMP:20231104T190212Z
UID:F7BA8E95-E06A-4016-BE9C-B5203C00A4FD
DTSTART;TZID=America/New_York:20231102T150000
DTEND;TZID=America/New_York:20231102T160000
DESCRIPTION:This talk targets engineers using power semiconductor devices i
 n inverter circuits who are not conversant in semiconductor physics and ch
 aracterization\, but who need to gain a practical understanding of how var
 ious device parameters impact the performance of their inverter circuit. I
 t will begin with a brief overview of important power semiconductor device
  parameters and an explanation of the benefits of wide band gap (WBG) devi
 ces over silicon. It will then discuss semiconductor power loss and its co
 mponents (conduction loss\, switching loss\, and driving loss) and what ke
 y device parameters affect these components. Since device capacitances are
  a key determinant of switching loss\, this talk will cover the accurate c
 haracterization of these parameters at thousands of volts of DC bias. Simi
 larly\, this talk will also cover the determination of gate charge (which 
 is a key parameter for driving loss) at high current and voltage. Finally\
 , this talk will explain the need to perform double-pulse testing to accur
 ately characterize device gate charge when driving inductive loads.\n\nSpe
 aker(s): Ervin Mile\n\nHauppauge Radisson\, 110 Motor Parkway\, Hauppauge\
 , New York\, United States\, 11788
LOCATION:Hauppauge Radisson\, 110 Motor Parkway\, Hauppauge\, New York\, Un
 ited States\, 11788
ORGANIZER:colotti@ieee.org
SEQUENCE:6
SUMMARY:Power Semiconductor Considerations for Inverter Design
URL;VALUE=URI:https://events.vtools.ieee.org/m/382169
X-ALT-DESC:Description: <br /><p>This talk targets engineers using power se
 miconductor devices in inverter circuits who are not conversant in semicon
 ductor physics and characterization\, but who need to gain a practical und
 erstanding of how various device parameters impact the performance of thei
 r inverter circuit. It will begin with a brief overview of important power
  semiconductor device parameters and an explanation of the benefits of wid
 e band gap (WBG) devices over silicon. It will then discuss semiconductor 
 power loss and its components (conduction loss\, switching loss\, and driv
 ing loss) and what key device parameters affect these components. Since de
 vice capacitances are a key determinant of switching loss\, this talk will
  cover the accurate characterization of these parameters at thousands of v
 olts of DC bias. Similarly\, this talk will also cover the determination o
 f gate charge (which is a key parameter for driving loss) at high current 
 and voltage. Finally\, this talk will explain the need to perform double-p
 ulse testing to accurately characterize device gate charge when driving in
 ductive loads.</p>
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