BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20240310T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20231105T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20240121T104926Z UID:E10360FB-38AB-4C1C-AD95-DDC83C5D7197 DTSTART;TZID=America/Los_Angeles:20240119T120000 DTEND;TZID=America/Los_Angeles:20240119T130000 DESCRIPTION:The Electron Devices Society Santa Clara Valley/San Francisco j oint Chapter is hosting Prof. Asif Khan. The title of the lecture is ‘Fe rroelectronics for next generation memory and NAND storage technology’\n \nWhen/Where: 19th Jan\, 2024\, 12 noon. Hybrid event (Venue: Atherton Roo m\, Plug and Play Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, CA 94085)\n\n Note: MUST RSVP to attend in-person\n\nRegistration: [Link](https://events .vtools.ieee.org/m/398697)\n\nIf you face an issue with vtools registratio n send an email to hiuyung.wong at ieee.org to get the zoom link and indic ate whether you are an IEEE member\, IEEE EDS member\, IEEE Student member \n\nContact: hiuyung.wong at ieee.org\n\nSpeaker: Prof. Asif Khan\n\nAbstr act:\n\nThe rise of artificial intelligent (AI)-driven marvels hinges on t he unrelenting advances in digital memory and storage solutions. The expon ential trajectory of improvements of dynamic random-access memory (DRAM) a nd NAND flash\, which are the mainstays of main memory and storage\, respe ctively\, is however facing formidable challenges at the technology level. \n\nIn this talk\, we will discuss the potential of the emerging ferroelec tric technologies to upend the DRAM and NAND landscapes [1-3]. We will hig hlight how ferroelectrics can enable the transition from 2-D to 3-D in DRA M technology and facilitate vertical scaling in NAND technology to achieve the 1000-layer milestone and beyond. We will also explore how ferroelectr ic devices can contribute to embedded and storage class memory technologie s and examine the challenges they face.\n\n[1] Asif Islam Khan\, Ali Kesha varzi\, and Suman Datta. “The future of ferroelectric field-effect trans istor technology.” Nature Electronics 3.10 (2020): 588-597.\n\n[2] Dipjy oti Das\, Asif Khan et al. “Experimental Demonstration and Modeling of a Ferroelectric Gate Stack with a Tunnel Dielectric Insert for NAND Applica tions.” Proceedings of the 2023 IEEE International Electron Devices Meet ing (IEDM).\n\n[3] Nirmal Ramaswamy et al. “NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads.” Proceedings of the 2023 IEEE International Elec tron Devices Meeting (IEDM).\n\nSpeaker Bio:\n\nAsif Khan is an Associate Professor in the School of Electrical and Computer Engineering with a cour tesy appointment in the School of Materials Science and Engineering at Geo rgia Institute of Technology. Dr. Khan’s research focuses on ferroelectr ic materials and devices to address the challenges faced by the semiconduc tor technology due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelecr ic negative capacitance\, which can reduce the power dissipation in transi stors. His recent interest is understanding and demonstrating the fundamen tal limits of memory technologies concerning their scalability\, density\, capacity\, performance\, and reliability. His group publishes research on topics that include both logic and memory technologies\, as well as artif icial intelligence and neuromorphic hardware. Dr Khan’s notable awards i nclude the DARPA Young Faculty Award (2021)\, the NSF CAREER award (2021)\ , the Intel Rising Star award (2020)\, the Qualcomm Innovation Fellowship (2012)\, TSMC Outstanding Student Research Award (2011) and University Gol d Medal from Bangladesh University of Engineering and Technology (2011). D r. Khan received the Class of 1934 CIOS Honor Roll award for excellence in teaching a graduate course on Quantum Computing Devices and Hardware in F all 2020. He is presently serving as an editor at IEEE Electron Device Let ters. In the past\, he has also worked as an associate editor for IEEE Acc ess\, and as a technical program committee member for various conferences including IEEE International Electron Devices Meeting (IEDM) and Design Au tomation Conference (DAC)\, among others.\n\n============================= =========================================\n\nSpeaker(s): Prof. Asif Khan\n \nAgenda: \nThe Electron Devices Society Santa Clara Valley/San Francisco joint Chapter is hosting Prof. Asif Khan. The title of the lecture is ‘F erroelectronics for next generation memory and NAND storage technology’\ n\nWhen/Where: 19th Jan\, 2024\, 12 noon. Hybrid event (Venue: Atherton Ro om\, Plug and Play Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, CA 94085)\n\ nNote: MUST RSVP to attend in-person\n\nRegistration: [Link](https://event s.vtools.ieee.org/m/398697)\n\nIf you face an issue with vtools registrati on send an email to hiuyung.wong at ieee.org to get the zoom link and indi cate whether you are an IEEE member\, IEEE EDS member\, IEEE Student membe r\n\nContact: hiuyung.wong at ieee.org\n\nSpeaker: Prof. Asif Khan\n\nAbst ract:\n\nThe rise of artificial intelligent (AI)-driven marvels hinges on the unrelenting advances in digital memory and storage solutions. The expo nential trajectory of improvements of dynamic random-access memory (DRAM) and NAND flash\, which are the mainstays of main memory and storage\, resp ectively\, is however facing formidable challenges at the technology level .\n\nIn this talk\, we will discuss the potential of the emerging ferroele ctric technologies to upend the DRAM and NAND landscapes [1-3]. We will hi ghlight how ferroelectrics can enable the transition from 2-D to 3-D in DR AM technology and facilitate vertical scaling in NAND technology to achiev e the 1000-layer milestone and beyond. We will also explore how ferroelect ric devices can contribute to embedded and storage class memory technologi es and examine the challenges they face.\n\n[1] Asif Islam Khan\, Ali Kesh avarzi\, and Suman Datta. “The future of ferroelectric field-effect tran sistor technology.” Nature Electronics 3.10 (2020): 588-597.\n\n[2] Dipj yoti Das\, Asif Khan et al. “Experimental Demonstration and Modeling of a Ferroelectric Gate Stack with a Tunnel Dielectric Insert for NAND Applic ations.” Proceedings of the 2023 IEEE International Electron Devices Mee ting (IEDM).\n\n[3] Nirmal Ramaswamy et al. “NVDRAM: A 32Gb Dual Layer 3 D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads.” Proceedings of the 2023 IEEE International Ele ctron Devices Meeting (IEDM).\n\nSpeaker Bio:\n\nAsif Khan is an Associate Professor in the School of Electrical and Computer Engineering with a cou rtesy appointment in the School of Materials Science and Engineering at Ge orgia Institute of Technology. Dr. Khan’s research focuses on ferroelect ric materials and devices to address the challenges faced by the semicondu ctor technology due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelec ric negative capacitance\, which can reduce the power dissipation in trans istors. His recent interest is understanding and demonstrating the fundame ntal limits of memory technologies concerning their scalability\, density\ , capacity\, performance\, and reliability. His group publishes research o n topics that include both logic and memory technologies\, as well as arti ficial intelligence and neuromorphic hardware. Dr Khan’s notable awards include the DARPA Young Faculty Award (2021)\, the NSF CAREER award (2021) \, the Intel Rising Star award (2020)\, the Qualcomm Innovation Fellowship (2012)\, TSMC Outstanding Student Research Award (2011) and University Go ld Medal from Bangladesh University of Engineering and Technology (2011). Dr. Khan received the Class of 1934 CIOS Honor Roll award for excellence i n teaching a graduate course on Quantum Computing Devices and Hardware in Fall 2020. He is presently serving as an editor at IEEE Electron Device Le tters. In the past\, he has also worked as an associate editor for IEEE Ac cess\, and as a technical program committee member for various conferences including IEEE International Electron Devices Meeting (IEDM) and Design A utomation Conference (DAC)\, among others.\n\n============================ ==========================================\n\nRoom: Atherton Room\, Bldg: Plug and Play Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, California\, Unit ed States\, Virtual: https://events.vtools.ieee.org/m/398697 LOCATION:Room: Atherton Room\, Bldg: Plug and Play Tech Center\, 440 N Wolf e Rd\, Sunnyvale\, California\, United States\, Virtual: https://events.vt ools.ieee.org/m/398697 ORGANIZER:hiuyung.wong@ieee.org SEQUENCE:23 SUMMARY:EDS Event: Ferroelectronics for next generation memory and NAND sto rage technology URL;VALUE=URI:https://events.vtools.ieee.org/m/398697 X-ALT-DESC:Description: <br /><div>\n<div>\n<p>The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter is hosting Prof. Asif Khan . The title of the lecture is &lsquo\;Ferroelectronics for next generation memory and NAND storage technology&rsquo\;</p>\n</div>\n<h3>When/Where: 1 9th Jan\, 2024\, 12 noon. Hybrid event (Venue: Atherton Room\, Plug and Pl ay Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, CA 94085)</h3>\n<p><strong>N ote: MUST RSVP to attend in-person</strong></p>\n<h3>Registration: <a href ="https://events.vtools.ieee.org/m/398697" target="_blank" rel="noopener"> Link</a></h3>\n<h3>If you face an issue with vtools registration send an e mail to hiuyung.wong at ieee.org to get the zoom link and indicate whether you are an IEEE member\, IEEE EDS member\, IEEE Student member</h3>\n<h4> Contact: <span class="gI"><span class="qu" role="gridcell"><span class="go ">hiuyung.wong at ieee.org</span></span></span></h4>\n<h2><strong>Speaker: Prof. Asif Khan<br /></strong></h2>\n<h3>Abstract:</h3>\n<p>The rise of a rtificial intelligent (AI)-driven marvels hinges on the unrelenting advanc es in digital memory and storage solutions. The exponential trajectory of improvements of dynamic random-access memory (DRAM) and NAND flash\, which are the mainstays of main memory and storage\, respectively\, is however facing formidable challenges at the technology level.</p>\n<p>In this talk \, we will discuss the potential of the emerging ferroelectric technologie s to upend the DRAM and NAND landscapes [1-3]. We will highlight how ferro electrics can enable the transition from 2-D to 3-D in DRAM technology and facilitate vertical scaling in NAND technology to achieve the 1000-layer milestone and beyond. We will also explore how ferroelectric devices can c ontribute to embedded and storage class memory technologies and examine th e challenges they face.</p>\n<p>[1] Asif Islam Khan\, Ali Keshavarzi\, and Suman Datta. &ldquo\;The future of ferroelectric field-effect transistor technology.&rdquo\; <em>Nature Electronics</em> 3.10 (2020): 588-597.</p>\ n<p>[2] Dipjyoti Das\, Asif Khan et al. &ldquo\;Experimental Demonstration and Modeling of a Ferroelectric Gate Stack with a Tunnel Dielectric Inser t for NAND Applications.&rdquo\; Proceedings of the 2023 IEEE Internationa l Electron Devices Meeting (IEDM).</p>\n<p>[3] Nirmal Ramaswamy et al. &ld quo\;NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memor y with Near-DRAM Performance for Demanding AI Workloads.&rdquo\; Proceedin gs of the 2023 IEEE International Electron Devices Meeting (IEDM).</p>\n</ div>\n<h3>Speaker Bio:</h3>\n<p>Asif Khan is an Associate Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at Georgia Institute o f Technology. Dr. Khan&rsquo\;s research focuses on ferroelectric material s and devices to address the challenges faced by the semiconductor technol ogy due to the end of transistor miniaturization. His work led to the firs t experimental proof-of-concept demonstration of the ferroelecric negative capacitance\, which can reduce the power dissipation in transistors. His recent interest is understanding and demonstrating the fundamental limits of memory technologies concerning their scalability\, density\, capacity\, performance\, and reliability. His group publishes research on topics tha t include both logic and memory technologies\, as well as artificial intel ligence and neuromorphic hardware. &nbsp\;Dr Khan&rsquo\;s notable awards include the DARPA Young Faculty Award (2021)\, the NSF CAREER award (2021) \, the Intel Rising Star award (2020)\, the Qualcomm Innovation Fellowship (2012)\, TSMC Outstanding Student Research Award (2011) and University Go ld Medal from Bangladesh University of Engineering and Technology (2011). Dr. Khan received the Class of 1934 CIOS Honor Roll award for excellence i n teaching a graduate course on Quantum Computing Devices and Hardware in Fall 2020. He is presently serving as an editor at IEEE Electron Device Le tters. In the past\, he has also worked as an associate editor for IEEE Ac cess\, and as a technical program committee member for various conferences including IEEE International Electron Devices Meeting (IEDM) and Design A utomation Conference (DAC)\, among others.</p>\n<div>\n<div>\n<p>========= =============================================================</p>\n</div>\ n</div><br /><br />Agenda: <br /><div>\n<div>\n<p>The Electron Devices Soc iety Santa Clara Valley/San Francisco joint Chapter is hosting Prof. Asif Khan. The title of the lecture is &lsquo\;Ferroelectronics for next genera tion memory and NAND storage technology&rsquo\;</p>\n</div>\n<h3>When/Wher e: 19th Jan\, 2024\, 12 noon. Hybrid event (Venue: Atherton Room\, Plug an d Play Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, CA 94085)</h3>\n<p><stro ng>Note: MUST RSVP to attend in-person</strong></p>\n<h3>Registration: <a href="https://events.vtools.ieee.org/m/398697" target="_blank" rel="noopen er">Link</a></h3>\n<h3>If you face an issue with vtools registration send an email to hiuyung.wong at ieee.org to get the zoom link and indicate whe ther you are an IEEE member\, IEEE EDS member\, IEEE Student member</h3>\n <h4>Contact: <span class="gI"><span class="qu" role="gridcell"><span class ="go">hiuyung.wong at ieee.org</span></span></span></h4>\n<h2><strong>Spea ker: Prof. Asif Khan<br /></strong></h2>\n<h3>Abstract:</h3>\n<p>The rise of artificial intelligent (AI)-driven marvels hinges on the unrelenting ad vances in digital memory and storage solutions. The exponential trajectory of improvements of dynamic random-access memory (DRAM) and NAND flash\, w hich are the mainstays of main memory and storage\, respectively\, is howe ver facing formidable challenges at the technology level.</p>\n<p>In this talk\, we will discuss the potential of the emerging ferroelectric technol ogies to upend the DRAM and NAND landscapes [1-3]. We will highlight how f erroelectrics can enable the transition from 2-D to 3-D in DRAM technology and facilitate vertical scaling in NAND technology to achieve the 1000-la yer milestone and beyond. We will also explore how ferroelectric devices c an contribute to embedded and storage class memory technologies and examin e the challenges they face.</p>\n<p>[1] Asif Islam Khan\, Ali Keshavarzi\, and Suman Datta. &ldquo\;The future of ferroelectric field-effect transis tor technology.&rdquo\; <em>Nature Electronics</em> 3.10 (2020): 588-597.< /p>\n<p>[2] Dipjyoti Das\, Asif Khan et al. &ldquo\;Experimental Demonstra tion and Modeling of a Ferroelectric Gate Stack with a Tunnel Dielectric I nsert for NAND Applications.&rdquo\; Proceedings of the 2023 IEEE Internat ional Electron Devices Meeting (IEDM).</p>\n<p>[3] Nirmal Ramaswamy et al. &ldquo\;NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric M emory with Near-DRAM Performance for Demanding AI Workloads.&rdquo\; Proce edings of the 2023 IEEE International Electron Devices Meeting (IEDM).</p> \n</div>\n<h3>Speaker Bio:</h3>\n<p>Asif Khan is an Associate Professor in the School of Electrical and Computer Engineering with a courtesy appoint ment in the School of Materials Science and Engineering at Georgia Institu te of Technology. Dr. Khan&rsquo\;s research focuses on ferroelectric mate rials and devices to address the challenges faced by the semiconductor tec hnology due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelecric nega tive capacitance\, which can reduce the power dissipation in transistors. His recent interest is understanding and demonstrating the fundamental lim its of memory technologies concerning their scalability\, density\, capaci ty\, performance\, and reliability. His group publishes research on topics that include both logic and memory technologies\, as well as artificial i ntelligence and neuromorphic hardware. &nbsp\;Dr Khan&rsquo\;s notable awa rds include the DARPA Young Faculty Award (2021)\, the NSF CAREER award (2 021)\, the Intel Rising Star award (2020)\, the Qualcomm Innovation Fellow ship (2012)\, TSMC Outstanding Student Research Award (2011) and Universit y Gold Medal from Bangladesh University of Engineering and Technology (201 1). Dr. Khan received the Class of 1934 CIOS Honor Roll award for excellen ce in teaching a graduate course on Quantum Computing Devices and Hardware in Fall 2020. He is presently serving as an editor at IEEE Electron Devic e Letters. In the past\, he has also worked as an associate editor for IEE E Access\, and as a technical program committee member for various confere nces including IEEE International Electron Devices Meeting (IEDM) and Desi gn Automation Conference (DAC)\, among others.</p>\n<div>\n<div>\n<p>===== =================================================================</p>\n</d iv>\n</div> END:VEVENT END:VCALENDAR