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DTSTART:20240310T030000
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BEGIN:VEVENT
DTSTAMP:20240325T170330Z
UID:486CF194-57B4-44CB-BD65-96523DA2BA42
DTSTART;TZID=America/Los_Angeles:20240131T183000
DTEND;TZID=America/Los_Angeles:20240131T200000
DESCRIPTION:Abstract:\n\nAccess to nanoscale piezoelectric transducers in a
 dvanced semiconductor processes enables realization of acoustic resonators
  on CMOS chips. Monolithically integrated acoustic resonators facilitate t
 he creation of on-chip clocks\, local oscillators\, and filters with impro
 ved performance\, size\, and cost.\n\nThe discovery of ferroelectricity in
  fluorite-structured oxides\, such as hafnia and zirconia\, has augured th
 e emergence of the long-coveted CMOS piezoelectric transducer. Atomic-laye
 r-deposited hafnia-zirconia are already used\, in amorphous form\, as high
 -k dielectrics in advanced semiconductor nodes. Once subjected to proper a
 tomic engineering\, these fluorites can take polar crystalline forms with 
 large piezoelectric coupling that enables creation of high-performance aco
 ustic resonators.\n\nIn this talk\, I will present an overview on CMOS-bas
 ed fluorite ferroelectrics and their properties pertained to nanoelectrome
 chanical systems (NEMS) resonator performance merits. I will introduce our
  efforts on (1) developing hafnia-zirconia piezoelectric transducers for c
 reation of super-high-frequency NEMS resonators with high electromechanica
 l-coupling and quality-factor\, and intrinsic switchability\, (2) developm
 ent of three-dimensional acoustic resonator technology based on integratin
 g hafnia-zirconia on semiconductor fins\, enabling massive integration of 
 multi-band filter arrays and wideband switch-free multiplexers\, and (3) d
 evelopment of ultra-stable oscillators using temperature-compensated hafni
 a-zirconia resonators.\n\nSpeaker(s): Prof. Roozbeh Tabrizian\, \n\nAgenda
 : \n6:30 – 6:50 PM Zoom Registration &amp; Networking\n\n6:50 – 7:00 PM An
 nouncements &amp; Polling\n\n7:00 – 7:45 PM Invited Talk\n\n7:45 – 8:00 PM
  Questions &amp; Answers\n\nVirtual: https://events.vtools.ieee.org/m/400594
LOCATION:Virtual: https://events.vtools.ieee.org/m/400594
ORGANIZER:jeronimo.segovia@ieee.org
SEQUENCE:22
SUMMARY:Unleashing the Power of Mechanics on CMOS: Hafnia Nanoelectromechan
 ical Systems For RF Frequency Control
URL;VALUE=URI:https://events.vtools.ieee.org/m/400594
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;strong&gt;Abstract:&lt;/strong&gt;&lt;/p&gt;\n&lt;p style=&quot;
 font-weight: 400\;&quot;&gt;Access to nanoscale piezoelectric transducers in advan
 ced semiconductor processes enables realization of acoustic resonators on 
 CMOS chips. Monolithically integrated acoustic resonators facilitate the c
 reation of on-chip clocks\, local oscillators\, and filters with improved 
 performance\, size\, and cost.&lt;/p&gt;\n&lt;p style=&quot;font-weight: 400\;&quot;&gt;The disc
 overy of ferroelectricity in fluorite-structured oxides\, such as hafnia a
 nd zirconia\, has augured the emergence of the long-coveted CMOS piezoelec
 tric transducer. Atomic-layer-deposited hafnia-zirconia are already used\,
  in amorphous form\, as high-k dielectrics in advanced semiconductor nodes
 . Once subjected to proper atomic engineering\, these fluorites can take p
 olar crystalline forms with large piezoelectric coupling that enables crea
 tion of high-performance acoustic resonators.&lt;/p&gt;\n&lt;p style=&quot;font-weight: 
 400\;&quot;&gt;In this talk\, I will present an overview on CMOS-based fluorite fe
 rroelectrics and their properties pertained to nanoelectromechanical syste
 ms (NEMS) resonator performance merits. I will introduce our efforts on (1
 ) developing hafnia-zirconia piezoelectric transducers for creation of sup
 er-high-frequency NEMS resonators with high electromechanical-coupling and
  quality-factor\, and intrinsic switchability\, (2) development of three-d
 imensional acoustic resonator technology based on integrating hafnia-zirco
 nia on semiconductor fins\, enabling massive integration of multi-band fil
 ter arrays and wideband switch-free multiplexers\, and (3) development of 
 ultra-stable oscillators using temperature-compensated hafnia-zirconia res
 onators.&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;p data-key=&quot;32&quot;&gt;&lt;span data-key=&quot;33&quot;
 &gt;&lt;strong data-slate-leaf=&quot;true&quot;&gt;6:30 &amp;ndash\; 6:50 PM Zoom Registration &amp;a
 mp\; Networking&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p data-key=&quot;32&quot;&gt;&lt;span data-key=&quot;33&quot;&gt;
 &lt;strong data-slate-leaf=&quot;true&quot;&gt;6:50 &amp;ndash\; 7:00 PM Announcements &amp;amp\; 
 Polling&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p data-key=&quot;34&quot;&gt;&lt;span data-key=&quot;35&quot;&gt;&lt;strong 
 data-slate-leaf=&quot;true&quot;&gt;7:00 &amp;ndash\; 7:45 PM Invited Talk&lt;/strong&gt;&lt;/span&gt;&lt;
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 rong data-slate-leaf=&quot;true&quot;&gt;7:45 &amp;ndash\; 8:00 PM Questions &amp;amp\; Answers
 &lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;
END:VEVENT
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