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DTSTAMP:20240207T205419Z
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DTSTART;TZID=America/New_York:20240130T123000
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DESCRIPTION:The internal electric field plays a fundamental role in radiati
 on detectors and access to it is therefore strategic. An important and wid
 ely used material in room temperature detectors is CdTe. This semiconducto
 r exhibits the electro-optical Pockels effect\, which is the linear respon
 se of the refraction index to an applied electric field. This allows to pr
 obe the electric field distribution inside the detectors with good spatial
  and temporal resolution.\n\nIn this talk I will show recent results relat
 ed to optically induced electric field perturbations. Trap-related optical
  doping is demonstrated in Schottky devices. Original experimental approac
 hes enable to highlight the local perturbation on the timescale of the cha
 rge carriers transit time.\n\nA 2D Electric field imaging on such a timesc
 ale together with the visualization of free carrier motion is in progress\
 , which is expected to provide a deep insight into charge transport mechan
 isms.\n\nThe underlying scope of the present talk is to point out how fixe
 d and free charges\, on their corresponding timescales\, can be used to co
 ntrol the local electric field and the optical modulation. These are gener
 al concepts in semiconductors which\, with suitable materials/design\, can
  be exploited in optoelectronics.\n\nSpeaker(s): \, ADRIANO COLA\n\nBldg: 
 BOSSONE 302\, DREXEL UNIVERSITY\, Philadelphia\, Pennsylvania\, United Sta
 tes\, Virtual: https://events.vtools.ieee.org/m/402114
LOCATION:Bldg: BOSSONE 302\, DREXEL UNIVERSITY\, Philadelphia\, Pennsylvani
 a\, United States\, Virtual: https://events.vtools.ieee.org/m/402114
ORGANIZER:adaryoush@drexel.edu
SEQUENCE:40
SUMMARY:Electric Field imaging and dynamics by using Pockels effect in CdTe
  Radiation Detectors
URL;VALUE=URI:https://events.vtools.ieee.org/m/402114
X-ALT-DESC:Description: <br /><p>The internal electric field plays a fundam
 ental role in radiation detectors and access to it is therefore strategic.
  An important and widely used material in room temperature detectors is Cd
 Te. This semiconductor exhibits the electro-optical Pockels effect\, which
  is the linear response of the refraction index to an applied electric fie
 ld. This allows to probe the electric field distribution inside the detect
 ors with good spatial and temporal resolution.</p>\n<p>In this talk I will
  show recent results related to optically induced electric field perturbat
 ions. Trap-related optical doping is demonstrated in Schottky devices. Ori
 ginal experimental approaches enable to highlight the local perturbation o
 n the timescale of the charge carriers transit time.</p>\n<p>A&nbsp\;2D El
 ectric field imaging on such a timescale together with the visualization o
 f free carrier motion is in progress\, which is expected to provide a deep
  insight into charge transport mechanisms.</p>\n<p>The underlying scope of
  the present talk is to point out how fixed and free charges\, on their co
 rresponding timescales\, can be used to control the local electric field a
 nd the optical modulation. These are general concepts in semiconductors wh
 ich\, with suitable materials/design\, can be exploited in optoelectronics
 .</p>
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