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DTSTART:20240310T030000
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DTSTART:20231105T010000
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DTSTAMP:20240207T033916Z
UID:ABB77894-7E30-49FB-9B30-96E9F6889252
DTSTART;TZID=America/Los_Angeles:20240206T173000
DTEND;TZID=America/Los_Angeles:20240206T183000
DESCRIPTION:IEEE Oregon Nanotechnology Chapter presents\n\nLow-dimensional 
 Transitional Materials and Devices for Wearable IoTs\n\nwith Prof. Li Tao\
 , Southeast University\, Nanjing\, China\n\nIEEE Nanotechnology Council Di
 stinguished Lecturer\n\nDate/Time: February 6th\, 2024 @5:30-6:30 PM PT\n\
 nLocation: Virtual\n\nThis talk introduces our recent experimental progres
 s on the synthesis\, characterization and device integration on 2D BixSb1-
 x and PtSe2 as well as boron nitride (BN) quantum dots for flexible transi
 stor\, sensor/transceiver and display components in wearable circuits.\n\n
 Speaker(s): Li Tao\, \n\nAgenda: \n5\;30 Introduction of speaker\n\n6:30 E
 nd\n\nVirtual: https://events.vtools.ieee.org/m/402175
LOCATION:Virtual: https://events.vtools.ieee.org/m/402175
ORGANIZER:e.perkins@ieee.org
SEQUENCE:27
SUMMARY:IEEE Oregon NanoTech Lecture: Low-dimensional Transitional Material
 s and Devices for Wearable IoTs
URL;VALUE=URI:https://events.vtools.ieee.org/m/402175
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;span style=&quot;font-size: 14pt\;&quot;&gt;&lt;strong&gt;IE
 EE Oregon Nanotechnology Chapter presents&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&lt;span st
 yle=&quot;font-size: 14pt\;&quot;&gt;&lt;strong&gt;Low-dimensional Transitional Materials and
  Devices for Wearable IoTs&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;with Prof. Li Tao\, Sou
 theast University\, Nanjing\, China&lt;/p&gt;\n&lt;p&gt;IEEE Nanotechnology Council Di
 stinguished Lecturer&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;Date/Time: &lt;/strong&gt;February 6&lt;sup&gt;th
 &lt;/sup&gt;\, 2024 @5:30-6:30 PM PT&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;Location: &lt;/strong&gt;Virtual&lt;
 /p&gt;\n&lt;p&gt;This talk introduces our recent experimental progress on the synth
 esis\, characterization and device integration on 2D BixSb1-x and PtSe2 as
  well as boron nitride (BN) quantum dots for flexible transistor\, sensor/
 transceiver and display components in wearable circuits.&amp;nbsp\;&lt;/p&gt;\n&lt;p&gt;&amp;n
 bsp\;&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;p&gt;5\;30 Introduction of speaker&lt;/p&gt;\n&lt;
 p&gt;6:30 End&lt;/p&gt;
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