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VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
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TZID:America/Phoenix
BEGIN:STANDARD
DTSTART:19671029T010000
TZOFFSETFROM:-0600
TZOFFSETTO:-0700
TZNAME:MST
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BEGIN:VEVENT
DTSTAMP:20240229T210729Z
UID:847BB633-1025-448D-B69B-0C649E660713
DTSTART;TZID=America/Phoenix:20240229T100000
DTEND;TZID=America/Phoenix:20240229T110000
DESCRIPTION:As Moore's law nears its physical limits\, a next generation de
 vice technology which breaks the limits of computing performance and merge
 s the memory hierarchy gap enables high speed and low power computations. 
 Microelectronics composed of new materials and new devices for exploring t
 he advanced paradigms of computing is a pressing need. Among the emerging 
 semiconductor electronics technologies\, non-volatile memory (NVM) become 
 the candidate for enabling the highly efficient computing while with nonvo
 latility for reliable low power information storage. Among non-volatile me
 mories\, resistive random-access memory (RRAM) holds great potential becau
 se of its simple design\, high-speed operation\, excellent scalability\, a
 nd low power consumption. However\, the sneak-path current (SPC) through u
 nselected neighboring cells is a major challenge occurring in crossbar RRA
 M configuration\, especially for large memory arrays. To address the sneak
  path current issue\, a selector device (or a threshold switch) integrated
  with a memory device has been developed. Several bidirectional selector d
 evices have been proposed for bipolar RRAM\, such as transistor device\, t
 unneling diode\, Schottky diode\, and threshold switches. Unfortunately\, 
 the additional selector devices i.e. 1S-1R or 1T-1R configuration consider
 ably increase the process complexity and cost. This seminar will introduce
  the oxide-based one-resistor-only (1R-only) memory cell with built-in sel
 f-selectivity\, which is applicable without additional selector device int
 egration\, while solving the sneak-path issue for high storage class cross
 bar array configuration in AI applications. In addition\, Prof. Ying-Chen 
 Chen will introduce her current developments on oxide-based selectors\, he
 lical-shaped dual functional devices\, one-time programmable memory\, and 
 novel in-space manufacture roadmap for next generation applications.\n\nSp
 eaker(s): Daphne Chen\, \n\nVirtual: https://events.vtools.ieee.org/m/4055
 71
LOCATION:Virtual: https://events.vtools.ieee.org/m/405571
ORGANIZER:Anamitra.Pal@asu.edu
SEQUENCE:11
SUMMARY:Self-Rectified RRAM and Selector Device for Next Generation Memory-
 in-Computing Era
URL;VALUE=URI:https://events.vtools.ieee.org/m/405571
X-ALT-DESC:Description: <br /><p>As Moore's law nears its physical limits\,
  a next generation device technology which breaks the limits of computing 
 performance and merges the memory hierarchy gap enables high speed and low
  power computations. Microelectronics composed of new materials and new de
 vices for exploring the advanced paradigms of computing is a pressing need
 . Among the emerging semiconductor electronics technologies\, non-volatile
  memory (NVM) become the candidate for enabling the highly efficient compu
 ting while with nonvolatility for reliable low power information storage. 
 Among non-volatile memories\, resistive random-access memory (RRAM) holds 
 great potential because of its simple design\, high-speed operation\, exce
 llent scalability\, and low power consumption. However\, the sneak-path cu
 rrent (SPC) through unselected neighboring cells is a major challenge occu
 rring in crossbar RRAM configuration\, especially for large memory arrays.
  To address the sneak path current issue\, a selector device (or a thresho
 ld switch) integrated with a memory device has been developed. Several bid
 irectional selector devices have been proposed for bipolar RRAM\, such as 
 transistor device\, tunneling diode\, Schottky diode\, and threshold switc
 hes. Unfortunately\, the additional selector devices i.e. 1S-1R or 1T-1R c
 onfiguration considerably increase the process complexity and cost. This s
 eminar will introduce the oxide-based one-resistor-only (1R-only) memory c
 ell with built-in self-selectivity\, which is applicable without additiona
 l selector device integration\, while solving the sneak-path issue for hig
 h storage class crossbar array configuration in AI applications. In additi
 on\, Prof. Ying-Chen Chen will introduce her current developments on oxide
 -based selectors\, helical-shaped dual functional devices\, one-time progr
 ammable memory\, and novel in-space manufacture roadmap for next generatio
 n applications.</p>
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