BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20240310T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20240429T062811Z UID:CCC578C5-1C35-436D-A9D9-D2B94A8A030A DTSTART;TZID=America/Los_Angeles:20240417T173000 DTEND;TZID=America/Los_Angeles:20240417T190000 DESCRIPTION:The Electron Devices Society Santa Clara Valley/San Francisco j oint Chapter is hosting Prof. Francesca Iacopi. The title of the lecture i s ‘More-than-Moore miniaturisation with graphene and cubic silicon carbi de’\n\nWhen/Where: 17th Apr\, 2024\, 5:30 pm - 7:00 pm. Hybrid event (Ve nue: Parlor B\, Benson Memorial Center\, Santa Clara University\, 500 El C amino Real\, Santa Clara\, CA 95053)\n\n(Benson Center is our student cent er and off-campus parking is a viable option\, though not as safe as on-ca mpus with a parking pass. We can arrange for free 2-hour parking for atten dees. The parking permits can be picked up at the venue after they have pa rked their cars in the visitor lot.)\n\nCampus map can be found here: http s://www.scu.edu/map/\n\nNote: To attend in person and obtain a free parkin g permit\, MUST RSVP before 4/14/2024 5PM\n\nIf you face an issue with vto ols registration send an email to hiuyung.wong at ieee.org to get the zoom link and indicate whether you are an IEEE member\, IEEE EDS member\, IEEE Student member\n\nContact: hiuyung.wong at ieee.org\n\nSpeaker: Prof. Fra ncesca Iacopi\nAbstract:\n\nIt is well known that harnessing graphene’s properties on a silicon platform could deliver a broad range of novel mini aturized andreconfigurable functionalities. It is less known that some key functionalities for MEMS/NEMS\, nano-optics and metasurfaces can be uniqu ely unlocked by the combination of graphene and silicon carbide [1\, 2\, 3 ].\nOver the last decade\, we have developed an epitaxial graphene on sili con carbide on silicon technology that inherently delivers both capabiliti es. This platform allows to fabricate any complex graphene flat or 3D nano pattern in a site – selective fashion\, ie without etching of the graphe ne\, at the wafer -scale and with sufficient adhesion for integration [1\, 4].\nWe will review the learnings from the development of this technology and some of its most promising applications. We show that the sheet resis tance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers\, despite substantially smaller grains. W e also indicate that the control of the graphene interfaces\, particularly when integrated\, can be a more important factor than achieving large gra in sizes [4]. In addition\, we show that well- engineered defects in graph ene are preferable to defect -free graphene for most electrochemical appli cations. Promising examples of application of this technology in the More- than – Moore domain include integrated energy storage [5]\, MIR sensing and detection [6]\, and sensors for electro-encephalography [7\, 8] for b rain-computer interfaces [9]..\n\n[1] B.Cunning et al\, Nanotechnology 25 (32)\, 325301\, 2014 [2] E.Romero et al.\, Physical Review Applied 13 (4)\ , 044007\, 2020 [3] P.Rufangura e\nal\, Journal of Physics: Materials 3 (3 )\, 032005\, 2020 [4] D.Katzmarek et al\, Nanotechnology 34 (40)\, 405302\ , 2023 [4] A.Pradeepkumar et al\, ACS\nApplied Nano Materials 3 (1)\, 830- 841\, 2019 [5] M.Amjadipour\, D.Su and F.Iacopi\, Batteries &amp\; Superca ps 3 (7)\, 587-595\, 2020 [6] P.Rufangura et\nal\, Nanomaterials 11 (9)\, 2339\, 2021 [7] S.Faisal et al\, Journal of Neural Engineering 18 (6)\, 06 6035\, 2021 [8] S.Faisal et al\, ACS Appl. Nano\nMater. 6 (7)\, 5440-5447\ , 2023 [9] F.Iacopi and CT Lin\, Progress in Biomedical Eng. 4 (4)\, 04300 2\, 2022.\n\nSpeaker Bio:\n\nProfessor Francesca Iacopi is an IEEE Fellow with over 20 years’ industrial and academic research expertise in semico nductor technologies\, with 160 peer-reviewed publications and 10 granted US patents\, spanning interconnects\, CMOS devices and packaging. Her rese arch focuses on the translation of basic scientific advances in nanomateri als and novel device concepts into implementable integrated technologies. She is known for her seminal work on the integration of porous dielectrics in on-chip interconnects\, and for\nthe invention of the alloy -mediated epitaxial graphene platform on SiC/Si pseudo-substrates. She was recipient of an MRS Gold Graduate Student Award (2003)\, an Australian Research Cou ncil Future Fellowship (2012)\, a Global Innovation Award in Washington DC (2014) and was listed among the most innovative engineers by Engineers Au stralia (2018). Francesca is an IEEE EDS Distinguished Lecturer and serves regularly in technical and strategic committees for IEEE and the Material s Research Society.\nShe is an Elected Member to the IEEE EDS Board of Gov ernors (2021\, 2024) and serves in the Editorial Advisory Board for ACS Ap plied Nanomaterials\, and the IEEE The Institute magazine. She is also the inaugural Editor-in-Chief of the IEEE Trans. on Materials for Electron De vices (IEEE T-MAT). She leads the Integrated Nanosystems Lab\, in the Facu lty of Engineering and IT\, University of Technology Sydney. She is a Chie f Investigator of the CoE in Transformative Meta-Optical Systems (TMOS)\, funded by the Australian Research Council.\n\n============================ ==========================================\n\nSpeaker(s): Prof. Francesca Iacopi\n\nAgenda: \nWhen/Where: 17th Apr\, 2024\, 5:30 pm. Hybrid event (V enue: Parlor B\, Benson Memorial Center\, Santa Clara University\, 500 El Camino Real\, Santa Clara\, CA 95053)\n\nSpeaker: Prof. Francesca Iacopi\n Abstract:\n\nIt is well known that harnessing graphene’s properties on a silicon platform could deliver a broad range of novel miniaturized andrec onfigurable functionalities. It is less known that some key functionalitie s for MEMS/NEMS\, nano-optics and metasurfaces can be uniquely unlocked by the combination of graphene and silicon carbide [1\, 2\, 3].\nOver the la st decade\, we have developed an epitaxial graphene on silicon carbide on silicon technology that inherently delivers both capabilities. This platfo rm allows to fabricate any complex graphene flat or 3D nanopattern in a si te – selective fashion\, ie without etching of the graphene\, at the waf er -scale and with sufficient adhesion for integration [1\, 4].\nWe will r eview the learnings from the development of this technology and some of it s most promising applications. We show that the sheet resistance of epitax ial graphene on 3C-SiC on silicon is comparable to that of epitaxial graph ene on SiC wafers\, despite substantially smaller grains. We also indicate that the control of the graphene interfaces\, particularly when integrate d\, can be a more important factor than achieving large grain sizes [4]. I n addition\, we show that well- engineered defects in graphene are prefera ble to defect -free graphene for most electrochemical applications. Promis ing examples of application of this technology in the More- than – Moore domain include integrated energy storage [5]\, MIR sensing and detection [6]\, and sensors for electro-encephalography [7\, 8] for brain-computer i nterfaces [9]..\n\n[1] B.Cunning et al\, Nanotechnology 25 (32)\, 325301\, 2014 [2] E.Romero et al.\, Physical Review Applied 13 (4)\, 044007\, 2020 [3] P.Rufangura e\nal\, Journal of Physics: Materials 3 (3)\, 032005\, 20 20 [4] D.Katzmarek et al\, Nanotechnology 34 (40)\, 405302\, 2023 [4] A.Pr adeepkumar et al\, ACS\nApplied Nano Materials 3 (1)\, 830-841\, 2019 [5] M.Amjadipour\, D.Su and F.Iacopi\, Batteries &amp\; Supercaps 3 (7)\, 587- 595\, 2020 [6] P.Rufangura et\nal\, Nanomaterials 11 (9)\, 2339\, 2021 [7] S.Faisal et al\, Journal of Neural Engineering 18 (6)\, 066035\, 2021 [8] S.Faisal et al\, ACS Appl. Nano\nMater. 6 (7)\, 5440-5447\, 2023 [9] F.Ia copi and CT Lin\, Progress in Biomedical Eng. 4 (4)\, 043002\, 2022.\n\n== ====================================================================\n\nRo om: Parlor B\, Bldg: Benson Memorial Center\, 500 El Camino Real\, Santa C lara University\, Santa Clara\, California\, United States\, 95053\, Virtu al: https://events.vtools.ieee.org/m/411442 LOCATION:Room: Parlor B\, Bldg: Benson Memorial Center\, 500 El Camino Real \, Santa Clara University\, Santa Clara\, California\, United States\, 950 53\, Virtual: https://events.vtools.ieee.org/m/411442 ORGANIZER:hiuyung.wong@ieee.org SEQUENCE:42 SUMMARY:Distinguished Lecture: EDS Event: More-than-Moore miniaturisation w ith graphene and cubic silicon carbide URL;VALUE=URI:https://events.vtools.ieee.org/m/411442 X-ALT-DESC:Description: <br /><div>\n<div>\n<p>The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter is hosting Prof. Francesca Iacopi. The title of the lecture is &lsquo\;More-than-Moore miniaturisati on with graphene and cubic silicon carbide&rsquo\;</p>\n</div>\n<h3><span style="font-size: 12pt\;">When/Where: 17th Apr\, 2024\, 5:30 pm - 7:00 pm. Hybrid event (Venue: Parlor B\, Benson Memorial Center\, Santa Clara Univ ersity\, 500 El Camino Real\, Santa Clara\, CA 95053)</span></h3>\n<p>(Ben son Center is our student center and off-campus parking is a viable option \, though not as safe as on-campus with a parking pass. We can arrange for free 2-hour parking for attendees. The parking permits can be picked up a t the venue after they have parked their cars in the visitor lot.)&nbsp\;< /p>\n<p>Campus map can be found here:&nbsp\;<a href="https://www.scu.edu/m ap/" target="_blank" rel="noopener" data-saferedirecturl="https://www.goog le.com/url?q=https://www.scu.edu/map/)&amp\;source=gmail&amp\;ust=17104418 62083000&amp\;usg=AOvVaw37fMNzrQnqoqpw1XQ4ZGC6">https://www.scu.edu/map/</ a></p>\n<h3><span style="font-size: 12pt\; color: rgb(224\, 62\, 45)\;">No te: To attend in person and obtain a free parking permit\, MUST RSVP befor e 4/14/2024 5PM</span></h3>\n<h3><span style="font-size: 10pt\;">If you fa ce an issue with vtools registration send an email to hiuyung.wong at ieee .org to get the zoom link and indicate whether you are an IEEE member\, IE EE EDS member\, IEEE Student member</span></h3>\n<h4><span style="font-siz e: 10pt\;">Contact: <span class="gI"><span class="qu" role="gridcell"><spa n class="go">hiuyung.wong at ieee.org</span></span></span></span></h4>\n<b r><span style="font-size: 12pt\;"><strong>Speaker: Prof. Francesca Iacopi< /strong></span>\n<h2><span style="font-size: 14pt\;"><strong>&nbsp\;</stro ng>Abstract:</span></h2>\n<div>\n<p>It is well known that harnessing graph ene&rsquo\;s properties on a silicon platform could deliver a broad range of novel miniaturized andreconfigurable functionalities. It is less known that some key functionalities for MEMS/NEMS\, nano-optics and metasurfaces can be uniquely unlocked by the combination of graphene and silicon carbi de [1\, 2\, 3].<br>Over the last decade\, we have developed an epitaxial g raphene on silicon carbide on silicon technology that inherently delivers both capabilities. This platform allows to fabricate any complex graphene flat or 3D nanopattern in a site &ndash\; selective fashion\, ie without e tching of the graphene\, at the wafer -scale and with sufficient adhesion for integration [1\, 4].<br>We will review the learnings from the developm ent of this technology and some of its most promising applications. We sho w that the sheet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers\, despite substanti ally smaller grains. We also indicate that the control of the graphene int erfaces\, particularly when integrated\, can be a more important factor th an achieving large grain sizes [4]. In addition\, we show that well- engin eered defects in graphene are preferable to defect -free graphene for most electrochemical applications. Promising examples of application of this t echnology in the More- than &ndash\; Moore domain include integrated energ y storage [5]\, MIR sensing and detection [6]\, and sensors for electro-en cephalography [7\, 8] for brain-computer interfaces [9]..</p>\n<p>[1] B.Cu nning et al\, Nanotechnology 25 (32)\, 325301\, 2014 [2] E.Romero et al.\, Physical Review Applied 13 (4)\, 044007\, 2020 [3] P.Rufangura e<br>al\, Journal of Physics: Materials 3 (3)\, 032005\, 2020 [4] D.Katzmarek et al\ , Nanotechnology 34 (40)\, 405302\, 2023 [4] A.Pradeepkumar et al\, ACS<br >Applied Nano Materials 3 (1)\, 830-841\, 2019 [5] M.Amjadipour\, D.Su and F.Iacopi\, Batteries &amp\;amp\; Supercaps 3 (7)\, 587-595\, 2020 [6] P.R ufangura et<br>al\, Nanomaterials 11 (9)\, 2339\, 2021 [7] S.Faisal et al\ , Journal of Neural Engineering 18 (6)\, 066035\, 2021 [8] S.Faisal et al\ , ACS Appl. Nano<br>Mater. 6 (7)\, 5440-5447\, 2023 [9] F.Iacopi and CT Li n\, Progress in Biomedical Eng. 4 (4)\, 043002\, 2022.</p>\n</div>\n<h3><s pan style="font-size: 14pt\;">Speaker Bio:</span></h3>\n<p>Professor Franc esca Iacopi is an IEEE Fellow with over 20 years&rsquo\; industrial and ac ademic research expertise in semiconductor technologies\, with 160 peer-re viewed publications and 10 granted US patents\, spanning interconnects\, C MOS devices and packaging. Her research focuses on the translation of basi c scientific advances in nanomaterials and novel device concepts into impl ementable integrated technologies. She is known for her seminal work on th e integration of porous dielectrics in on-chip interconnects\, and for<br> the invention of the alloy -mediated epitaxial graphene platform on SiC/Si pseudo-substrates. She was recipient of an MRS Gold Graduate Student Awar d (2003)\, an Australian Research Council Future Fellowship (2012)\, a Glo bal Innovation Award in Washington DC (2014) and was listed among the most innovative engineers by Engineers Australia (2018). Francesca is an IEEE EDS Distinguished Lecturer and serves regularly in technical and strategic committees for IEEE and the Materials Research Society.<br>She is an Elec ted Member to the IEEE EDS Board of Governors (2021\, 2024) and serves in the Editorial Advisory Board for ACS Applied Nanomaterials\, and the IEEE The Institute magazine. She is also the inaugural Editor-in-Chief of the I EEE Trans. on Materials for Electron Devices (IEEE T-MAT). She leads the I ntegrated Nanosystems Lab\, in the Faculty of Engineering and IT\, Univers ity of Technology Sydney. She is a Chief Investigator of the CoE in Transf ormative Meta-Optical Systems (TMOS)\, funded by the Australian Research C ouncil.</p>\n</div>\n<div>\n<div>\n<p>==================================== ==================================</p>\n</div>\n</div><br /><br />Agenda: <br /><div>\n<div>\n<p>&nbsp\;</p>\n</div>\n<h3><span style="font-size: 12 pt\;">When/Where: 17th Apr\, 2024\, 5:30 pm. Hybrid event (Venue: Parlor B \, Benson Memorial Center\, Santa Clara University\, 500 El Camino Real\, Santa Clara\, CA 95053)</span></h3>\n<br><span style="font-size: 12pt\;">< strong>Speaker: Prof. Francesca Iacopi</strong></span>\n<h2><span style="f ont-size: 14pt\;"><strong>&nbsp\;</strong>Abstract:</span></h2>\n<div>\n<p >It is well known that harnessing graphene&rsquo\;s properties on a silico n platform could deliver a broad range of novel miniaturized andreconfigur able functionalities. It is less known that some key functionalities for M EMS/NEMS\, nano-optics and metasurfaces can be uniquely unlocked by the co mbination of graphene and silicon carbide [1\, 2\, 3].<br>Over the last de cade\, we have developed an epitaxial graphene on silicon carbide on silic on technology that inherently delivers both capabilities. This platform al lows to fabricate any complex graphene flat or 3D nanopattern in a site &n dash\; selective fashion\, ie without etching of the graphene\, at the waf er -scale and with sufficient adhesion for integration [1\, 4].<br>We will review the learnings from the development of this technology and some of its most promising applications. We show that the sheet resistance of epit axial graphene on 3C-SiC on silicon is comparable to that of epitaxial gra phene on SiC wafers\, despite substantially smaller grains. We also indica te that the control of the graphene interfaces\, particularly when integra ted\, can be a more important factor than achieving large grain sizes [4]. In addition\, we show that well- engineered defects in graphene are prefe rable to defect -free graphene for most electrochemical applications. Prom ising examples of application of this technology in the More- than &ndash\ ; Moore domain include integrated energy storage [5]\, MIR sensing and det ection [6]\, and sensors for electro-encephalography [7\, 8] for brain-com puter interfaces [9]..</p>\n<p>[1] B.Cunning et al\, Nanotechnology 25 (32 )\, 325301\, 2014 [2] E.Romero et al.\, Physical Review Applied 13 (4)\, 0 44007\, 2020 [3] P.Rufangura e<br>al\, Journal of Physics: Materials 3 (3) \, 032005\, 2020 [4] D.Katzmarek et al\, Nanotechnology 34 (40)\, 405302\, 2023 [4] A.Pradeepkumar et al\, ACS<br>Applied Nano Materials 3 (1)\, 830 -841\, 2019 [5] M.Amjadipour\, D.Su and F.Iacopi\, Batteries &amp\;amp\; S upercaps 3 (7)\, 587-595\, 2020 [6] P.Rufangura et<br>al\, Nanomaterials 1 1 (9)\, 2339\, 2021 [7] S.Faisal et al\, Journal of Neural Engineering 18 (6)\, 066035\, 2021 [8] S.Faisal et al\, ACS Appl. Nano<br>Mater. 6 (7)\, 5440-5447\, 2023 [9] F.Iacopi and CT Lin\, Progress in Biomedical Eng. 4 ( 4)\, 043002\, 2022.</p>\n</div>\n</div>\n<div>\n<div>\n<p>================ ======================================================</p>\n</div>\n</div> END:VEVENT END:VCALENDAR