BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20240310T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20241130T231626Z UID:D3B27B1A-54B8-4A0E-987C-3B7D107A0830 DTSTART;TZID=America/Los_Angeles:20240411T113000 DTEND;TZID=America/Los_Angeles:20240411T131500 DESCRIPTION:[]\n\nAbstract:\n\nAs downscaling approaches physical limits\, semiconductor devices are evolving into increasingly complex 3D nano-archi tectures. Fabricating these unprecedented devices in HVM requires precise and selective material deposition & etch methods.\n\nAtomic layer etch (AL E) helps to sculpt these structures by selectively removing materials with angstrom-scale control. By exploiting chemical differences between materi als\, ALE processes are designed to etch certain exposed materials while m inimizing damage to others. ALE can enable scaling boosters such as fully self-aligned via (FSAV)\, a critical method for logic back end of line (BE OL) downscaling. Vapor-phase thermal ALE can also provide controlled\, sel ective etch in features with high aspect ratio\, low critical dimension\, or horizontal openings\, overcoming the limitations of wet and plasma etch es in emerging 3D structures.\n\nThis seminar will focus on ALE of metals and metal oxides for logic and DRAM\, including process fundamentals\, sel ectivity mechanisms\, and thermal ALE processes developed at EMD Electroni cs\n\n[]\n\nBio:\n\nMartin McBriarty\n\nSenior Scientist\, EMD Electronics \n\nMartin McBriarty leads atomic layer etch development at EMD Electronic s in San Jose\, California.\n\nHe earned his B.S. in Materials Science & E ngineering at the University of Florida in 2008 and his Ph.D. in the same field at Northwestern University in 2014. He studied at the Fritz Haber In stitute as a Fulbright scholar and completed postdoctoral work at Pacific Northwest National Laboratory before joining Intermolecular (a business of Merck KGaA\, Darmstadt\, Germany) in 2018.\n\nIn-Person Meeting\n\nThursd ay\, April 11\, 2024\n\n11:30 AM: Networking\, Pizza & Drinks\n\nNoon -- 1 pm: Seminar\n\nPlease register on Eventbrite before 9:30 AM on Thursday\, April 11 \, 2024\n\nhttps://www.eventbrite.com/e/868091132947?aff=oddtdtc reator\n\nWalk-In attendance is welcomed but discouraged\n\nCo-sponsored b y: CH06083 - SCV/SF Jt. Section Chapter\, ED15\n\nBldg: ==> Use corner ent rance: Kifer Road / San Lucar Court ==> Do not enter at main entrance on K ifer Road\, EAG Labs\, 810 Kifer Road\, Sunnyvale\, California\, United St ates\, 95051 LOCATION:Bldg: ==> Use corner entrance: Kifer Road / San Lucar Court ==> Do not enter at main entrance on Kifer Road\, EAG Labs\, 810 Kifer Road\, Su nnyvale\, California\, United States\, 95051 ORGANIZER:g.m.friedman@ieee.org SEQUENCE:24 SUMMARY:Thermal Atomic Layer Etch for Logic and Memory Downscaling URL;VALUE=URI:https://events.vtools.ieee.org/m/415097 X-ALT-DESC:Description: <br /><div class="eds-l-mar-vert-6 eds-l-sm-mar-ver t-4 eds-text-bm structured-content-rich-text">\n<div class="eds-text--left ">\n<h3>&nbsp\;</h3>\n<h3><img src="https://events.vtools.ieee.org/vtools_ ui/media/display/51c2c863-fee6-4ce2-9b3c-b6245d39f0ce" alt="" width="546" height="364"></h3>\n<h3><em>Abstract:</em></h3>\n<h3>As downscaling approa ches physical limits\, semiconductor devices are evolving into increasingl y complex 3D nano-architectures. Fabricating these unprecedented devices i n HVM requires precise and selective material deposition &amp\; etch metho ds.</h3>\n<h3>Atomic layer etch (ALE) helps to sculpt these structures by selectively removing materials with angstrom-scale control. By exploiting chemical differences between materials\, ALE processes are designed to etc h certain exposed materials while minimizing damage to others. ALE can ena ble scaling boosters such as fully self-aligned via (FSAV)\, a critical me thod for logic back end of line (BEOL) downscaling. Vapor-phase thermal AL E can also provide controlled\, selective etch in features with high aspec t ratio\, low critical dimension\, or horizontal openings\, overcoming the limitations of wet and plasma etches in emerging 3D structures.</h3>\n<h3 >This seminar will focus on ALE of metals and metal oxides for logic and D RAM\, including process fundamentals\, selectivity mechanisms\, and therma l ALE processes developed at EMD Electronics</h3>\n</div>\n</div>\n<div cl ass="" data-testid="image-content">\n<div class="eds-l-mar-vert-6 eds-l-sm -mar-vert-4 eds-text-bm undefined">\n<div>\n<div class="eds-fx--fade-in">< img class="eds-max-img" src="https://img.evbuc.com/https%3A%2F%2Fcdn.evbuc .com%2Fimages%2F726167079%2F28237422945%2F1%2Foriginal.20240322-182657?h=2 000&amp\;w=720&amp\;auto=format%2Ccompress&amp\;q=75&amp\;sharp=10&amp\;s= 29d82628dce7f57e8bf481d6e09c1b2a" alt="" loading="lazy"></div>\n</div>\n</ div>\n</div>\n<div class="eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-text-bm structured-content-rich-text">\n<div class="eds-text--left">\n<h3><em>Bio :</em></h3>\n<h3>Martin McBriarty</h3>\n<h3>Senior Scientist\, EMD Electro nics</h3>\n<h3>Martin McBriarty leads atomic layer etch development at EMD Electronics in San Jose\, California.</h3>\n<h3>He earned his B.S. in Mat erials Science &amp\; Engineering at the University of Florida in 2008 and his Ph.D. in the same field at Northwestern University in 2014. He studie d at the Fritz Haber Institute as a Fulbright scholar and completed postdo ctoral work at Pacific Northwest National Laboratory before joining Interm olecular (a business of Merck KGaA\, Darmstadt\, Germany) in 2018.</h3>\n< p>&nbsp\;</p>\n<h3><em>In-Person Meeting</em></h3>\n<p><strong>Thursday\, April 11</strong><strong>\, 2024</strong></p>\n<p><strong>11:30 AM: Networ king\, Pizza &amp\; Drinks</strong></p>\n<p><strong>Noon -- 1 pm: Seminar< /strong></p>\n<p><strong>Please register on Eventbrite before 9:30 AM on</ strong><strong> </strong><strong>Thursday\, April 11</strong><strong> \, 2 024</strong></p>\n<p><strong>https://www.eventbrite.com/e/868091132947?aff =oddtdtcreator</strong></p>\n<p><strong>Walk-In attendance is welcomed but discouraged</strong></p>\n</div>\n</div> END:VEVENT END:VCALENDAR