BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:US/Eastern BEGIN:DAYLIGHT DTSTART:20160313T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20161106T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20161102T151809Z UID:28C3F656-8E46-11E6-A7C6-0050568D7F66 DTSTART;TZID=US/Eastern:20161103T093000 DTEND;TZID=US/Eastern:20161103T150000 DESCRIPTION:IEEE Electron Devices Society-Northern Virginia/Washington DC C hapter is pleased to announce an IEEE Semiconductor Memory Day Event on No vember 3\, 2016. This event will consist of four presentations and a Fab t our. Four guest speakers will give their talks about the History of Semico nductor Memory\, Current Landscape of Memory Industry\, Future Emerging Me mory\, and Space/Radiation Effect in Memory Devices\, respectively. After the presentations\, we will host a Fab window tour to allow participants t o experience the state-of-the-art semiconductor facility of Micron Technol ogy Memory Fab and interact with Micron engineers. This event will provide a great opportunity for college students and anyone who has never been to a semiconductor Fab before to learn the advanced semiconductor manufactur ing facility/processes. At the end of the Memory Day\, you will have a goo d understanding about the entire spectrum of Semiconductor Memory.\n\nThis event is co-sponsored by Nanotechnology Council-Northern Virginia/Washing ton DC Chapter and Micron Technology Foundation.\n\n***Participants are no t required to stay through the entire event and they can attend part of th e event based on their own schedule\, but pre-registration is required for security badges preparation.\n\nCo-sponsored by: Nanotechnology Council-N orthern Virginia/Washington DC Chapter and Micron Technology Foundation.\n \nSpeaker(s): Rashmi Jha\, Nadim Haddad \, \, \n\nAgenda: \nNote: Pre-Reg istration is required to prepare security badges and get headcount.\n\nDat e: November 3\, 2016\, Thursday\n\nLocation: Micron Technology Virginia\, 9600 Godwin Drive\, Manassas\, VA 20110\n\nAgenda:\n\n08:30AM-09:50AM Chec k-in/light refreshment\n\n09:50AM-9:55AM: Introduction/Welcome by IEEE Ele ctron Devices Society-Northern Virginia/Washington DC chapter\n\n09:55AM-1 0:00AM: Welcome by MTV Site Leadership Team member\n\n10:00AM-10:50AM: His tory of Memory and Manassas Fab (Dinu Patel and Nadim Haddad\, IBM Retiree s)\n\n10:50AM-11:30AM: Current Landscape of Memory Industry (John Zhang\, Micron Technology)\n\n11:30AM-12:30PM: Emerging Memory:Resistive Random Ac cess Memory (ReRAM) (Rashmi Jha\, University of Cincinnati)\n\n12:30PM-1:3 0PM: Complimentary lunch\n\n1:30PM–2:30PM: Radiation Effects in Memories – Mechanisms and Mitigation (Nadim Haddad\, IEEE Fellow/IBM Retiree)\n\ n2:30PM-3:30PM: Fab window tour (Micron Engineers)\n\nDirections to Micron :\n\n**From I-66 Corridor Exit: VA-234 S on Prince William Pkwy. Exit 44 t oward Manassas/Dumfries Left: University Blvd. until you reach first light \, go directly through the light End: 9600 Godwin Dr\n\n**From I-95 Corrid or Exit: VA-234 N Exit 152 toward Manassas Take: 28 N ramp toward Manassas Merge: Nokesville Rd/ VA-28 Left: Godwin Dr. End: 9600 Godwin Dr.\n\nPark ing Information:\n\nPlease follow the “Visitor Parking” signs to desig nated parking areas. Then proceed to Building 130 (brown in color) and giv e your name (or group designation) to the receptionist for check-in.\n\nCo ntact: John Zhang\, Chair\, IEEE-Electron Devices Society Northern Virgini a /Washington DC Chapter\, email: john.zhang.us@IEEE.org\n\nRoom: Classroo m3\, Bldg: Building 130\, Micron Technology Virginia\, 9600 Goodwin Dr.\, Manassas\, Virginia\, United States\, 20110 LOCATION:Room: Classroom3\, Bldg: Building 130\, Micron Technology Virginia \, 9600 Goodwin Dr.\, Manassas\, Virginia\, United States\, 20110 ORGANIZER:john.zhang.us@ieee.org SEQUENCE:93 SUMMARY:IEEE Memory Day: History\, Current Status\, and Future of Semicondu ctor Memory URL;VALUE=URI:https://events.vtools.ieee.org/m/41572 X-ALT-DESC:Description: <br /><p>IEEE Electron Devices Society-Northern Vir ginia/Washington DC Chapter is&nbsp\;pleased to announce an&nbsp\;IEEE Sem iconductor Memory Day Event on November 3\, 2016. This event will consist of four presentations and a Fab tour. Four guest&nbsp\;speakers will give their talks about the&nbsp\;History of Semiconductor Memory\, Current Land scape of Memory Industry\, Future&nbsp\;Emerging Memory\, and Space/Radiat ion Effect in Memory Devices\, respectively. After the presentations\, we will host a Fab window tour to allow participants&nbsp\;to experience the state-of-the-art semiconductor facility of&nbsp\;Micron Technology Memory Fab and interact with Micron engineers. This event will provide&nbsp\;a gr eat opportunity for college students and anyone who has never been to a se miconductor Fab before to learn&nbsp\;the advanced semiconductor manufactu ring facility/processes. At the end of the Memory Day\, you will have a go od&nbsp\;understanding about the&nbsp\;entire&nbsp\;spectrum of Semiconduc tor Memory.&nbsp\;</p>\n<p>This event is co-sponsored by Nanotechnology Co uncil-Northern Virginia/Washington DC Chapter and Micron Technology Founda tion.</p>\n<p><strong>***Participants are not required to stay through the entire event and they can attend part of the&nbsp\;event based on their o wn schedule\, but pre-registration is required for security badges prepara tion.</strong></p><br /><br />Agenda: <br /><p><strong>Note: Pre-Registrat ion is required to prepare security badges and get headcount.</strong></p> \n<p>&nbsp\;</p>\n<p><strong>Date:</strong>&nbsp\; November 3\, 2016\, Thu rsday&nbsp\;&nbsp\;</p>\n<p><strong>Location:</strong> Micron Technology V irginia\, 9600 Godwin Drive\, Manassas\, VA 20110</p>\n<p>&nbsp\;</p>\n<p> <strong>Agenda:&nbsp\;</strong></p>\n<p>08:30AM-09:50AM &nbsp\; &nbsp\; &n bsp\; &nbsp\;Check-in/light refreshment</p>\n<p>09:50AM-9:55AM: &nbsp\; &n bsp\; &nbsp\; &nbsp\;Introduction/Welcome by IEEE Electron Devices Society -Northern Virginia/Washington DC chapter</p>\n<p>09:55AM-10:00AM:&nbsp\;&n bsp\;&nbsp\;&nbsp\;&nbsp\; Welcome by MTV Site Leadership Team member</p>\ n<p>10:00AM-10:50AM:&nbsp\; &nbsp\;&nbsp\;&nbsp\;&nbsp\;History of Memory and Manassas Fab (<strong>Dinu Patel and Nadim Haddad\, IBM Retirees</stro ng>)</p>\n<p>10:50AM-11:30AM: &nbsp\; &nbsp\; &nbsp\;Current Landscape of Memory Industry (<strong>John&nbsp\;Zhang\, Micron Technology)</strong></p >\n<p>11:30AM-12:30PM: &nbsp\; &nbsp\; &nbsp\;Emerging Memory:Resistive Ra ndom Access Memory (ReRAM)&nbsp\;<strong>(<strong>Rashmi Jha\,&nbsp\;<stro ng>University of Cincinnati</strong></strong>) &nbsp\;</strong></p>\n<p>&n bsp\;</p>\n<p>12:30PM-1:30PM: &nbsp\; &nbsp\; &nbsp\; &nbsp\;Complimentary lunch</p>\n<p>&nbsp\;</p>\n<p>1:30PM&ndash\;2:30PM: &nbsp\; &nbsp\; &nbsp \; &nbsp\; &nbsp\;Radiation Effects in Memories &ndash\; Mechanisms and Mi tigation <strong>(Nadim Haddad\, IEEE Fellow/IBM Retiree)</strong></p>\n<p >2:30PM-3:30PM: &nbsp\; &nbsp\; &nbsp\; &nbsp\; &nbsp\;Fab window tour (<s trong>Micron Engineers</strong>)</p>\n<p>&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp \;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;&nbsp\;</p>\n<p> <strong>Directions to Micron:</strong></p>\n<p>**From I-66 Corridor Exit: VA-234 S on Prince William Pkwy. Exit 44 toward Manassas/Dumfries Left: Un iversity Blvd. until you reach first light\, go directly through the light End: 9600 Godwin Dr</p>\n<p>**From I-95 Corridor Exit: VA-234 N Exit 152 toward Manassas Take: 28 N ramp toward Manassas Merge: Nokesville Rd/ VA-2 8 Left: Godwin Dr. End: 9600 Godwin Dr.</p>\n<p>&nbsp\;</p>\n<p><strong>Pa rking Information:&nbsp\;</strong></p>\n<p>Please follow the &ldquo\;Visit or Parking&rdquo\; signs to designated parking areas. Then proceed to Buil ding 130 (brown in color) and give your name (or group designation) to the receptionist for check-in.</p>\n<p>&nbsp\;</p>\n<p><strong>Contact:</stro ng> John Zhang\, Chair\, IEEE-Electron Devices Society Northern Virginia / Washington DC Chapter\, email:&nbsp\;&nbsp\;<a href="mailto:john.zhang.us@ IEEE.org">john.zhang.us@IEEE.org</a></p>\n<p>&nbsp\;</p>\n<p>&nbsp\;</p> END:VEVENT END:VCALENDAR