BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20240310T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20240529T110104Z UID:0F27955E-AEE4-472F-A6EF-7822260298C2 DTSTART;TZID=America/New_York:20240528T180000 DTEND;TZID=America/New_York:20240528T190200 DESCRIPTION:[][]\n\nCubic boron arsenide (c-BAs) is an indirect bandgap (1. 82 eV) semiconductor\, it has a similar band structure as silicon\, but it s thermal conductivity is 10 times higher and its carrier mobility is thre e times larger at room temperature. This suitable bandgap\, simultaneous h igh thermal conductivity and high carrier mobility have made c-BAs a promi sing material for next generation electronics\, especially after recent ex perimental verifications of these excellent thermal and electronic propert ies. However\, many challenges still remain in order for c-BAs to realize its many promises. Besides the challenge of synthesis of uniform large siz e c-BAs crystals\, techniques that can rapidly characterize and screen hig h quality c-BAs are still lacking. In this talk\, I will first give a brie f introduction to the history and basic properties of c-BAs\, I will then explain its next-only-to-diamond high thermal conductivity. After that\, I will show optical techniques that have been developed to measure thermal conductivity and carrier mobility. Finally I will show photoluminescence a nd Raman spectra of c-BAs\, and discuss the challenges of using them to id entify and characterize high quality c-BAs.\n\nCo-sponsored by: Gordon Bur khead\n\nSpeaker(s): Jiming Bao\, \n\nAgenda: \n6:00 PM - Start of online/ virtual event. Local chapter and Section updates\, introductions\, etc.\n6 :05 PM - Start of Distinguished Lecture\n6:55 PM - Formal End of Lecture\, Start of Q&A - Discussions\n7:15 PM - Formal end of event\, Vote of thank s to the Speaker....\n\nVirtual: https://events.vtools.ieee.org/m/417886 LOCATION:Virtual: https://events.vtools.ieee.org/m/417886 ORGANIZER:sharan.kalwani@ieee.org SEQUENCE:39 SUMMARY:Cubic Boron Arsenide (cBAs): a Promising Semiconductor for Next Gen Electronics URL;VALUE=URI:https://events.vtools.ieee.org/m/417886 X-ALT-DESC:Description: <br /><p style="text-align: left\;"><img src="https ://en.wikipedia.org/wiki/File:Boron-arsenide-unit-cell-1963-CM-3D-balls.pn g" alt=""><img style="border-width: 1px\; display: block\; margin-left: au to\; margin-right: auto\;" src="https://events.vtools.ieee.org/vtools_ui/m edia/display/c63bd65f-3ff1-48ea-ab84-f864b376be18" alt="" width="220" heig ht="202"></p>\n<p style="text-align: justify\;">Cubic boron arsenide (c-BA s) is an indirect bandgap (1.82 eV) semiconductor\, it has a similar band structure as silicon\, but its thermal conductivity is 10 times higher and its carrier mobility is three times larger at room temperature. This suit able bandgap\, simultaneous high thermal conductivity and high carrier mob ility have made c-BAs a promising material for next generation electronics \, especially after recent experimental verifications of these excellent t hermal and electronic properties. However\, many challenges still remain i n order for c-BAs to realize its many promises. Besides the challenge of s ynthesis of uniform large size c-BAs crystals\, techniques that can rapidl y characterize and screen high quality c-BAs are still lacking. In this ta lk\, I will first give a brief introduction to the history and basic prope rties of c-BAs\, I will then explain its next-only-to-diamond high thermal conductivity. After that\, I will show optical techniques that have been developed to measure thermal conductivity and carrier mobility. Finally I will show photoluminescence and Raman spectra of c-BAs\, and discuss the c hallenges of using them to identify and characterize high quality c-BAs.</ p><br /><br />Agenda: <br /><p>6:00 PM - Start of online/virtual event. Lo cal chapter and Section updates\, introductions\, etc.<br>6:05 PM - Start of Distinguished Lecture<br>6:55 PM - Formal End of Lecture\, Start of Q&a mp\;A - Discussions<br>7:15 PM - Formal end of event\, Vote of thanks to t he Speaker....</p> END:VEVENT END:VCALENDAR