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DTSTAMP:20240703T154257Z
UID:A49A151B-816E-44CD-8608-47FFB37A00D1
DTSTART;TZID=America/New_York:20240610T130000
DTEND;TZID=America/New_York:20240610T161500
DESCRIPTION:The tutorial will take place in Davis Hall 101 at UB North Camp
 us or on Zoom link below.\n\nTutorial Session\, Chair: Vladimir Mitin\n\nS
 essions and presenters are:\n\n1:00 pm – 2:00 pm\nTutorial – 1\n\nMich
 ael Shur\, Rensselaer Polytechnic Institute\n\nCounterintuitive Physics of
  Terahertz Electronics.\n\nAbstract: In typical electronic layers formed a
 t semiconductor heterointerfaces\, electron-electron collisions are so fre
 quent that electrons form a two-dimensional viscous electronic fluid. (Thi
 s is contrary to a popular belief that they form a two-dimensional electro
 n gas.) The viscosity of this fluid in graphene at cryogenic temperatures 
 is hundreds of times higher than the viscosity of honey. In conventional s
 emiconductors at room temperature\, viscosity is similar to glycerin visco
 sity – still very important\, but not necessarily dominant. The electron
  transport in electronic (or hole) fluid was collision-dominated in most o
 f the last century field effect transistors operating at room temperature.
  It is collision-dominated in modern Thin Film Transistors\, but in more a
 dvanced transistors (such as MOSFETs used in iPhone 15 pro) the electron t
 ransport is ballistic or quasi-ballistic. Ballistic or quasi-ballistic ele
 ctronic fluid supports the waves of electron density - called plasma waves
  that could resonate with impinging terahertz (THz) radiation and become u
 nstable (amplifying or even generating THz radiation). At high intensities
  of impinging THz radiation\, plasma waves get transformed into shock wave
 s. Even more interesting is the physics of “plasmonic crystals” combin
 ing properties of a fluid and crystal. I will discuss “plasmonic boom”
  instabilities\, the instabilities controlled by boundary conditions\, and
  transit time instabilities in plasmonic crystals. These instabilities pro
 vide the mechanisms for generating sub-THz and THz radiation for 6G commun
 ications and multiple other applications of THz electronics. I will also p
 resent predictions and the first measured data on Tesla-range DC magnetic 
 fields generated in circular plasmonic crystals by circularly polarized TH
 z radiation\, and explain recently observed switching from decay to transp
 arency to amplification in graphene plasmonic crystals.\n\n2:00 pm – 3:0
 0 pm\nTutorial – 2\n\nTaiichi Otsuji\, Tohoku University\n\nPlasmonic Te
 rahertz Devices Using Graphene-Based 2D Materials\n\nAbstract: Graphene ha
 s attracted considerable attention due to its massless and gapless energy 
 spectrum. This lecture reviews recent advances in the research of plasmoni
 c terahertz (THz) devices using graphene-based two-dimensional (2D) materi
 als\, particularly highlighting the THz sources and detectors for use in f
 uture 6G/7G THz wireless communications systems. Carrier-injection pumping
  of graphene can enable negative-dynamic conductivity in the terahertz (TH
 z) range leading to new types of THz lasers. We developed a prototype of a
  graphene channel laser transistor\, demonstrating broadband amplified spo
 ntaneous emission from 1 to 7.6 THz and weak single-mode lasing at 5.2 THz
  at 100K. To increase the operating temperature and lasing radiation inten
 sity\, we introduced a physics of the current-driven instability in graphe
 ne Dirac plasmons (GDPs)\, succeeding in tunable resonant THz amplificatio
 n with the maximal gain of 9% at room temperature. The obtained gain was f
 ar beyond the well-known landmark level of the quantum mechanical limit of
  2.3% when photons directly interact with electrons without excitation of 
 graphene plasmons. A discovery of a new instability mechanisms of GDPs cal
 led Coulomb-drag instability as well as Zener-Klein-tunneling instability 
 will also be introduced thanks to the strong viscous Dirac fermions of gra
 phene carriers. In terms of THz detection\, recently we experimentally dem
 onstrated 100-Gbit/s-class fast and sensitive THz detection in a graphene-
 channel transistor utilizing current-driven plasmonic\, photothermoelectri
 c\, and a new type of so-called three-dimensional rectification mechanisms
 . In the final part\, future trends and prospects including graphene-based
  van der Waals heterostructures as well as active control of the parity an
 d time-reversal symmetry are also addressed.\n\n3:00 pm – 3:15 pm: Coffe
 e Break\n\n3:15 pm – 4:15 pm\nTutorial – 3\n\nAndrei Sergeev\, U.S. Ar
 my Research Laboratory\n\nCounting of THz Photons based on Nanoscale Elect
 ron Heating\n\nAbstract: Superconducting single-photon detectors (SSPDs) o
 ffer unprecedented sensitivity at THz wavelengths that contain information
  critical for the prediction of climate change and understanding of the or
 igin of the Universe. SSPDs are the tool of choice for future Deep Space O
 ptical Communications (Deep Space Network)\, Space-Ground Communications (
 Space-Ground Sensor Network)\, and medical imaging. SSPDs can be used to p
 rovide high-speed and energy-efficient transfer of big data from multiple 
 sensors established at various network platforms\, they also open new poss
 ibilities in LiDAR (Light Detection and Ranging) and 3D imaging (Depth ima
 ging) to enhance sensing characteristics\, including range\, data acquisit
 ion duration\, depth resolution\, and illumination power. Current supercon
 ducting detectors are based on well-explored conventional superconductors.
  These materials provide good sensing performance\, but the potential for 
 further improvements has been exhausted. For breakthroughs in sensor perfo
 rmance and sensing capabilities\, we must explore novel superconducting ma
 terials and novel sensing concepts. For this\, we can leverage recent adva
 nces in photonics and atomic-layer-by-layer molecular beam epitaxy synthes
 is of high-Tc cuprate superconductors. Cuprate heterostructures (CHS) may 
 offer high and tunable transition temperature\, ultra-small electron heat 
 capacity\, ultrafast phonon heat removal\, slow electron-phonon cooling\, 
 intense electron heating\, low intrinsic noise\, and strong coupling to th
 e radiation\, fast and reconfigurable out-diffusion electron cooling\, and
  high scalability. CHSs present an excellent opportunity for developing ne
 xt-generation SSPDs and enhancing active 3D imaging\, including range\, da
 ta acquisition duration\, depth resolution\, and illumination power. This 
 talk will discuss electron heating in nanoscale superconductors\, control 
 of electron-phonon coupling by nanoscale disorder\, material properties of
  traditional superconducting films and cuprate heterostructures\, and opti
 mal design of SSPDs for various applications. I will also present a histor
 y of R&amp;D devoted to THz SSPDs\, in particular innovative research at UB un
 der the guidance of Professor Vladimir Mitin. Finally\, I will discuss cha
 racteristics of current devices and evaluate performance of potential devi
 ces based on superconducting heterostructures.\n\nhttps://buffalo.zoom.us/
 j/93565601922?pwd=QzVkMGNKT1hyM0hSdzBkMzhXeURVZz09\n\nRoom: 101\, Bldg: Da
 vis Hall\, State University of NY at Buffalo\, Amherst\, New York\, United
  States\, 14260\, Virtual: https://events.vtools.ieee.org/m/419860
LOCATION:Room: 101\, Bldg: Davis Hall\, State University of NY at Buffalo\,
  Amherst\, New York\, United States\, 14260\, Virtual: https://events.vtoo
 ls.ieee.org/m/419860
ORGANIZER:jmmoskal@ieee.org
SEQUENCE:56
SUMMARY:IEEE Buffalo Section presents TeraTech 2024 tutorial
URL;VALUE=URI:https://events.vtools.ieee.org/m/419860
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;span style=&quot;color: rgb(0\, 0\, 0)\; font-
 size: 14pt\;&quot;&gt;&lt;strong&gt;The tutorial will take place in Davis Hall 101 at UB
  North Campus or on Zoom link below.&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&lt;span style=&quot;
 font-size: 14pt\;&quot;&gt;&lt;strong&gt;Tutorial Session\, &lt;/strong&gt;&lt;strong&gt;Chair: Vlad
 imir Mitin&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&lt;span style=&quot;font-size: 12pt\;&quot;&gt;&lt;strong
 &gt;&lt;span style=&quot;font-size: 14pt\;&quot;&gt;Sessions and presenters are:&lt;/span&gt;&lt;/stro
 ng&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;1:00 pm&lt;/strong&gt;&lt;strong&gt;&amp;nbsp\;&amp;ndash\; 2:00 pm
 &lt;/strong&gt;&lt;br&gt;&lt;strong&gt;Tutorial &amp;ndash\; 1&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;Michael Shur\, R
 ensselaer Polytechnic Institute&lt;/p&gt;\n&lt;p&gt;Counterintuitive Physics of Terahe
 rtz Electronics.&lt;/p&gt;\n&lt;p&gt;Abstract: In typical electronic layers formed at 
 semiconductor heterointerfaces\, electron-electron collisions are so frequ
 ent that electrons form a two-dimensional viscous electronic fluid. (This 
 is contrary to a popular belief that they form a two-dimensional electron 
 gas.) The viscosity of this fluid in graphene at cryogenic temperatures is
  hundreds of times higher than the viscosity of honey. In conventional sem
 iconductors at room temperature\, viscosity is similar to glycerin viscosi
 ty &amp;ndash\; still very important\, but not necessarily dominant. The elect
 ron transport in electronic (or hole) fluid was collision-dominated in mos
 t of the last century field effect transistors operating at room temperatu
 re. It is collision-dominated in modern Thin Film Transistors\, but in mor
 e advanced transistors (such as MOSFETs used in iPhone 15 pro) the electro
 n transport is ballistic or quasi-ballistic. Ballistic or quasi-ballistic 
 electronic fluid supports the waves of electron density - called plasma wa
 ves that could resonate with impinging terahertz (THz) radiation and becom
 e unstable (amplifying or even generating THz radiation). At high intensit
 ies of impinging THz radiation\, plasma waves get transformed into shock w
 aves. Even more interesting is the physics of &amp;ldquo\;plasmonic crystals&amp;r
 dquo\; combining properties of a fluid and crystal. I will discuss &amp;ldquo\
 ;plasmonic boom&amp;rdquo\; instabilities\, the instabilities controlled by bo
 undary conditions\, and transit time instabilities in plasmonic crystals. 
 These instabilities provide the mechanisms for generating sub-THz and THz 
 radiation for 6G communications and multiple other applications of THz ele
 ctronics. I will also present predictions and the first measured data on T
 esla-range DC magnetic fields generated in circular plasmonic crystals by 
 circularly polarized THz radiation\, &amp;nbsp\;and explain recently observed 
 switching from decay to transparency to amplification in graphene plasmoni
 c crystals.&amp;nbsp\;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;2:00 pm &amp;ndash\; 3:00 pm&lt;/strong&gt;&lt;br&gt;&lt;s
 trong&gt;Tutorial &amp;ndash\; 2&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;Taiichi Otsuji\, Tohoku Univers
 ity&lt;/p&gt;\n&lt;p&gt;Plasmonic Terahertz Devices Using Graphene-Based 2D Materials&lt;
 /p&gt;\n&lt;p&gt;Abstract: Graphene has attracted considerable attention due to its
  massless and gapless energy spectrum. This lecture reviews recent advance
 s in the research of plasmonic terahertz (THz) devices using graphene-base
 d two-dimensional (2D) materials\, particularly highlighting the THz sourc
 es and detectors for use in future 6G/7G THz wireless communications syste
 ms. Carrier-injection pumping of graphene can enable negative-dynamic cond
 uctivity in the terahertz (THz) range leading to new types of THz lasers. 
 We developed a prototype of a graphene channel laser transistor\, demonstr
 ating broadband amplified spontaneous emission from 1 to 7.6 THz and weak 
 single-mode lasing at 5.2 THz at 100K. To increase the operating temperatu
 re and lasing radiation intensity\, we introduced a physics of the current
 -driven instability in graphene Dirac plasmons (GDPs)\, succeeding in tuna
 ble resonant THz amplification with the maximal gain of 9% at room tempera
 ture. The obtained gain was far beyond the well-known landmark level of th
 e quantum mechanical limit of 2.3% when photons directly interact with ele
 ctrons without excitation of graphene plasmons. A discovery of a new insta
 bility mechanisms of GDPs called Coulomb-drag instability as well as Zener
 -Klein-tunneling instability will also be introduced thanks to the strong 
 viscous Dirac fermions of graphene carriers. In terms of THz detection\, r
 ecently we experimentally demonstrated 100-Gbit/s-class fast and sensitive
  THz detection in a graphene-channel transistor utilizing current-driven p
 lasmonic\, photothermoelectric\, and a new type of so-called three-dimensi
 onal rectification mechanisms. In the final part\, future trends and prosp
 ects including graphene-based van der Waals heterostructures as well as ac
 tive control of the parity and time-reversal symmetry are also addressed.&amp;
 nbsp\; &amp;nbsp\;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;3:00 pm &amp;ndash\; 3:15 pm: &amp;nbsp\;Coffee Bre
 ak&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;&amp;nbsp\;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;3:15 pm &amp;ndash\; 4:15 pm&lt;/stro
 ng&gt;&lt;br&gt;&lt;strong&gt;Tutorial &amp;ndash\; 3&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;Andrei Sergeev\, U.S. 
 Army Research Laboratory&lt;/p&gt;\n&lt;p&gt;Counting of THz Photons based on Nanoscal
 e Electron Heating&lt;/p&gt;\n&lt;p&gt;Abstract: Superconducting single-photon detecto
 rs (SSPDs) offer unprecedented sensitivity at THz wavelengths that contain
  information critical for the prediction of climate change and understandi
 ng of the origin of the Universe. SSPDs are the tool of choice for future 
 Deep Space Optical Communications (Deep Space Network)\, Space-Ground Comm
 unications (Space-Ground Sensor Network)\, and medical imaging. SSPDs can 
 be used to provide high-speed and energy-efficient transfer of big data fr
 om multiple sensors established at various network platforms\, they also o
 pen new possibilities in LiDAR (Light Detection and Ranging) and 3D imagin
 g (Depth imaging) to enhance sensing characteristics\, including range\, d
 ata acquisition duration\, depth resolution\, and illumination power. Curr
 ent superconducting detectors are based on well-explored conventional supe
 rconductors. These materials provide good sensing performance\, but the po
 tential for further improvements has been exhausted. For breakthroughs in 
 sensor performance and sensing capabilities\, we must explore novel superc
 onducting materials and novel sensing concepts. For this\, we can leverage
  recent advances in photonics and atomic-layer-by-layer molecular beam epi
 taxy synthesis of high-Tc cuprate superconductors. Cuprate heterostructure
 s (CHS) may offer high and tunable transition temperature\, ultra-small el
 ectron heat capacity\, ultrafast phonon heat removal\, slow electron-phono
 n cooling\, intense electron heating\, low intrinsic noise\, and strong co
 upling to the radiation\, fast and reconfigurable out-diffusion electron c
 ooling\, and high scalability. CHSs present an excellent opportunity for d
 eveloping next-generation SSPDs and enhancing active 3D imaging\, includin
 g range\, data acquisition duration\, depth resolution\, and illumination 
 power. This talk will discuss electron heating in nanoscale superconductor
 s\, control of electron-phonon coupling by nanoscale disorder\, material p
 roperties of traditional superconducting films and cuprate heterostructure
 s\, and optimal design of SSPDs for various applications. I will also pres
 ent a history of R&amp;amp\;D devoted to THz SSPDs\, in particular innovative 
 research at UB under the guidance of Professor Vladimir Mitin. Finally\, I
  will discuss characteristics of current devices and evaluate performance 
 of potential devices based on superconducting heterostructures.&lt;/p&gt;\n&lt;p&gt;&lt;a
  href=&quot;https://buffalo.zoom.us/j/93565601922?pwd=QzVkMGNKT1hyM0hSdzBkMzhXe
 URVZz09&quot;&gt;https://buffalo.zoom.us/j/93565601922?pwd=QzVkMGNKT1hyM0hSdzBkMzh
 XeURVZz09&lt;/a&gt;&lt;/p&gt;
END:VEVENT
END:VCALENDAR

