BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20240310T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20240608T142006Z UID:204488F7-1AC5-4786-9EE1-B448B7EC031C DTSTART;TZID=America/New_York:20240605T090000 DTEND;TZID=America/New_York:20240605T103000 DESCRIPTION:Compact models are used by circuit designers using SPICE modeli ng tools to design analog or digital circuits for high-frequency and/or hi gh-power circuits for many different applications. The process of translat ing the device’s performance into an accurate model is an interesting an d complex process.\n\nIf you are interested in learning more about the ASM -HEMT model for GaN HEMTs from its developer\, please consider joining us for this insightful presentation.\n\nAbstract:\n\nGallium Nitride (GaN) Hi gh Electron Mobility Transistors (HEMTs) and their associated RF and power -electronic applications have been a topic of aggressive academic and indu strial research over the past couple of decades. This is due to the commen dable level of performance promised by the GaN material system and the het ero-junction that it forms with AlGaN\, leading to features such as high b reakdown voltage\, high mobility\, high saturation velocity\, high sheet c arrier density\, the ability to withstand high operating temperatures etc. In order to take full advantage of these properties and to translate them into viable circuit applications a fully robust and accurate GaN HEMT mod el is of prime importance. In this talk\, I will present our ASM-HEMT mode l for GaN-based power and RF devices. I will also briefly talk about our e fforts in modeling of SiC based MOS transistors.\n\nSpeaker(s): Yogesh Sin gh Chauhan\, \n\nAgenda: \n8:30 to 9:00 am Eastern Time\, sign in\n\n9:00 to 10:00 am Eastern Time\, Seminar\n\n10:00 am to 10:30 am Eastern Time\, Questions and discussions.\n\nVirtual: https://events.vtools.ieee.org/m/42 0980 LOCATION:Virtual: https://events.vtools.ieee.org/m/420980 ORGANIZER:pankaj.shah@ieee.org SEQUENCE:46 SUMMARY:Compact Modeling of GaN HEMTs for Power and RF Circuit Design URL;VALUE=URI:https://events.vtools.ieee.org/m/420980 X-ALT-DESC:Description: <br /><p class="MsoNormal"><span style="font-family : arial\, helvetica\, sans-serif\; font-size: 14pt\;">Compact models are u sed by circuit designers using SPICE modeling tools to design analog or di gital circuits for high-frequency and/or high-power circuits for many diff erent applications.<span style="mso-spacerun: yes\;">&nbsp\; </span>The pr ocess of translating the device&rsquo\;s performance into an accurate mode l is an interesting and complex process.</span></p>\n<p><span style="font- size: 14pt\; font-family: arial\, helvetica\, sans-serif\; color: black\;" >If you are interested in learning more about the ASM-HEMT model for GaN H EMTs from its developer\, please consider joining us for this insightful p resentation.&nbsp\;&nbsp\;</span></p>\n<p><span style="font-size: 14pt\; f ont-family: arial\, helvetica\, sans-serif\; color: black\;">Abstract:</sp an></p>\n<p class="MsoNormal" style="margin-bottom: 0in\; text-align: just ify\; line-height: normal\; background: white\;"><span style="font-size: 1 4pt\; font-family: arial\, helvetica\, sans-serif\;"><span style="color: b lack\;">Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) a nd their associated RF and power-electronic applications have been a topic of aggressive academic and industrial research over the past couple of de cades. This is due to the commendable level of performance promised by the GaN material system and the hetero-junction that it forms with AlGaN\, le ading to features such as high breakdown voltage\, high mobility\, high sa turation velocity\, high sheet carrier density\, the ability to withstand high operating temperatures etc. In order to take full advantage of these properties and to translate them into viable circuit applications a fully robust and accurate GaN HEMT model is of prime importance. </span><span st yle="color: black\;">In this talk\, I will present our ASM-HEMT model for GaN-based power and RF devices. I will also briefly talk about our efforts in modeling of SiC based MOS transistors.</span></span></p>\n<p class="Ms oNormal" style="margin-bottom: 0in\; text-align: justify\; line-height: no rmal\; background: white\;">&nbsp\;</p>\n<p class="MsoNormal" style="margi n-bottom: 0in\; text-align: justify\; line-height: normal\; tab-stops: 45. 8pt 91.6pt 137.4pt 183.2pt 229.0pt 274.8pt 320.6pt 366.4pt 412.2pt 458.0pt 503.8pt 549.6pt 595.4pt 641.2pt 687.0pt 732.8pt\;">&nbsp\;</p><br /><br / >Agenda: <br /><p>8:30 to 9:00 am Eastern Time\,&nbsp\; sign in</p>\n<p>9: 00 to 10:00 am Eastern Time\, Seminar</p>\n<p>10:00 am to 10:30 am Eastern Time\, Questions and discussions.</p> END:VEVENT END:VCALENDAR