BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20240310T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20240718T233925Z UID:8F1AD7DF-1083-4EDF-9C04-24FFFF0CABE8 DTSTART;TZID=America/Los_Angeles:20240718T120000 DTEND;TZID=America/Los_Angeles:20240718T130000 DESCRIPTION:[]The advent of 3D Heterogeneous Integration (3DHI) in advanced packaging and wafer-level IC packaging introduces significant challenges for inline defect inspection and offline failure analysis. The 3D stacking and wafer bonding processes create optically opaque structures\, necessit ating techniques like x-rays to penetrate multiple buried layers for defec t detection. However\, as device features in 3DHI continue to shrink (e.g. \, microbumps shrinking to <10 µm in diameter and TSV interconnects scali ng to single-digit micrometers)\, existing non-destructive techniques face substantial technological barriers. Current 3D X-ray methods require high er resolutions to meet these evolving demands\, and acquiring sub-micron i maging data using conventional x-ray tomography can take hours or be impra ctical for large 300 mm wafers. To bridge these metrology gaps\, we have d eveloped two innovative 3D x-ray inspection tools:\n1. High Throughput (3D Data in Minutes): This tool is designed for the rapid inspection of 300 m m wafers during wafer-level packaging and bonding. It can automatically re solve various 3D defects down to 0.5 µm resolution within minutes. It is also capable of addressing high-resolution multi-chiplet inspections\, lar ge advanced packages or board-level failure analysis\, such as for PCBs.\n 2. High Resolution (300 nm spatial Resolution): This complementary tool ai ms to surpass the resolution limits of current leading high-resolution 3D x-ray and x-ray microscopes (XRM) for the failure analysis of advanced het erogeneous packages. It delivers true 300 nm spatial resolution (<50 nm vo xel) for characterizing submicron defects in microbumps\, delamination\, v oids\, interfacial cracks\, and RDL that are beyond the capabilities of ex isting XRMs.\n\nSpeaker(s): Wenbing Yun\, \n\nVirtual: https://events.vto ols.ieee.org/m/423135 LOCATION:Virtual: https://events.vtools.ieee.org/m/423135 ORGANIZER:p.wesling@ieee.org SEQUENCE:20 SUMMARY:Advanced X-ray Imaging Technologies for Heterogeneous 3D IC Package Metrology and Inspection URL;VALUE=URI:https://events.vtools.ieee.org/m/423135 X-ALT-DESC:Description: <br /><p><img style="float: right\;" src="https://e vents.vtools.ieee.org/vtools_ui/media/display/5bcb9ef6-dc92-447c-b1d3-e4fd eafd65ba" alt="" width="500" height="250">The advent of 3D Heterogeneous I ntegration (3DHI) in advanced packaging and wafer-level IC packaging intro duces significant challenges for inline defect inspection and offline fail ure analysis. The 3D stacking and wafer bonding processes create optically opaque structures\, necessitating techniques like x-rays to penetrate mul tiple buried layers for defect detection. However\, as device features in 3DHI continue to shrink (e.g.\, microbumps shrinking to &lt\;10 &micro\;m in diameter and TSV interconnects scaling to single-digit micrometers)\, e xisting non-destructive techniques face substantial technological barriers . Current 3D X-ray methods require higher resolutions to meet these evolvi ng demands\, and acquiring sub-micron imaging data using conventional x-ra y tomography can take hours or be impractical for large 300 mm wafers. To bridge these metrology gaps\, we have developed two innovative 3D x-ray in spection tools:<br>1. High Throughput (3D Data in Minutes): This tool is d esigned for the rapid inspection of 300 mm wafers during wafer-level packa ging and bonding. It can automatically resolve various 3D defects down to 0.5 &micro\;m resolution within minutes. It is also capable of addressing high-resolution multi-chiplet inspections\, large advanced packages or boa rd-level failure analysis\, such as for PCBs.<br>2. High Resolution (300 n m spatial Resolution): This complementary tool aims to surpass the resolut ion limits of current leading high-resolution 3D x-ray and x-ray microscop es (XRM) for the failure analysis of advanced heterogeneous packages. It d elivers true 300 nm spatial resolution (&lt\;50 nm voxel) for characterizi ng submicron defects in microbumps\, delamination\, voids\, interfacial cr acks\, and RDL that are beyond the capabilities of existing XRMs.</p> END:VEVENT END:VCALENDAR