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DTSTART:20240310T030000
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DTSTAMP:20240927T011012Z
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DTSTART;TZID=America/New_York:20240925T183000
DTEND;TZID=America/New_York:20240925T193000
DESCRIPTION:Radiation resistant photovoltaics (PV) for lunar surface applic
 ations has been increasingly important for application on the lunar surfac
 e. Graphene-based Schottky diodes with semiconductor various radiation res
 istant layers is a promising choice for lunar PV due to (i) graphene high 
 photon transparency (ii) and radiation resistant semiconducting layers suc
 h as GaN. We propose a G/n-GaN Schottky diode where the metal is replaced 
 by graphene grown on top of a thin oxide layer resting on the semiconducto
 r. Photoexcitation of carriers occurs in both graphene and the semiconduct
 or regions. the oxide layer prevents or reduces recombination of photo-car
 riers. we propose a model where photo-generated electrons cross the PV dev
 ice in both directions (from Gr to the semiconductor and vice versa) via t
 wo mechanisms by (a) thermionic emission and (b) quantum tunneling. We out
 line the method of obtaining net current densities (thermionic and tunneli
 ng). Tunneling transmission and thermionic carrier escape and current are 
 outlined along with the advantage of high current density generation in th
 e harsh lunar surface environment.\n\nCo-sponsored by: EDS Student Branch\
 , Physics & Engineering Dept\, University of Scranton\n\nSpeaker(s): Argyr
 ios\n\nAgenda: \nProfessional meeting at the University of Scranton\n\nRoo
 m: 334\, Bldg: Loyola Science Center (LSC)\, 204 Monroe Ave\, Physics and 
 Engineering Dept\, University of Scranton\, Scranton\, Pennsylvania\, Unit
 ed States\, 18510\, Virtual: https://events.vtools.ieee.org/m/424115
LOCATION:Room: 334\, Bldg: Loyola Science Center (LSC)\, 204 Monroe Ave\, P
 hysics and Engineering Dept\, University of Scranton\, Scranton\, Pennsylv
 ania\, United States\, 18510\, Virtual: https://events.vtools.ieee.org/m/4
 24115
ORGANIZER:Argyrios.varonides@scranton.edu
SEQUENCE:11
SUMMARY:Radiation Resistant Graphene-based photovoltaics for lunar surface 
 applications
URL;VALUE=URI:https://events.vtools.ieee.org/m/424115
X-ALT-DESC:Description: <br /><p>Radiation resistant photovoltaics (PV) for
  lunar surface applications has been increasingly important for applicatio
 n on the lunar surface. Graphene-based Schottky diodes with semiconductor 
 various radiation resistant layers is a promising choice for lunar PV due 
 to (i) graphene high photon transparency (ii) and radiation resistant semi
 conducting layers such as GaN. We propose a G/n-GaN Schottky diode where t
 he metal is replaced by graphene grown on top of a thin oxide layer restin
 g on the semiconductor. Photoexcitation of carriers occurs in both graphen
 e and the semiconductor regions. the oxide layer prevents or reduces recom
 bination of photo-carriers. we propose a model where photo-generated elect
 rons cross the PV device in both directions (from Gr to the semiconductor 
 and vice versa) via two mechanisms by (a) thermionic emission and (b) quan
 tum tunneling. We outline the method of obtaining net current densities (t
 hermionic and tunneling). Tunneling transmission and thermionic carrier es
 cape and current are outlined along with the advantage of high current den
 sity generation in the harsh lunar surface environment.&nbsp\;</p><br /><b
 r />Agenda: <br /><p>Professional meeting at the University of Scranton</p
 >
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