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DTSTART:20241103T010000
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DTSTAMP:20241017T201802Z
UID:A7063AC5-4B0C-42D0-B3C8-817E25E142A5
DTSTART;TZID=America/New_York:20241016T164500
DTEND;TZID=America/New_York:20241016T183000
DESCRIPTION:Compact Models (CMs) for circuit simulation have been at the he
 art of CAD tools for bridging circuit design and technology development ov
 er the past decades. In this talk\, we begin with an overview of the histo
 rical role of CMs and fundamental equations. Evolution of MOSFET CMs\, fro
 m bulk to SOI and FinFETs\, is reviewed and their inter-relationships disc
 ussed. Unification of CMs with the unified regional modeling (URM) approac
 h is presented\, together with model validation with numerical data and ve
 rification with experimental data. Model extension to III-V HEMTs includin
 g 2-dimensional electron gas (2DEG) in multiple sub-bands and trap-charge 
 effects is presented.\n\nCo-sponsored by: IEEE North Jersey Section\n\nSpe
 aker(s): Dr. Xing Zhou\n\nAgenda: \nEvent Time: 4:45 PM to 6:30 PM\n\n4:45
  PM Refreshments and Networking\n\n5:00 PM Talk by Dr. Xing Zhou  EDS DL\,
  Singapore\n\nSeminar is in ECEC 202.\n\nAll Welcome: There is no fee/char
 ge for attending IEEE technical seminar. You don&#39;t have to be an IEEE Memb
 er to attend. Refreshments are free for all attendees. Please invite your 
 friends and colleagues to take advantage of this Invited Distinguished Lec
 ture.\n\nRoom: ECE 202\, Bldg: ECEC Building\, 154 Summit Street\, Newark\
 , NJ 07102\, NJIT\, Newark\, New Jersey\, United States\, 07102
LOCATION:Room: ECE 202\, Bldg: ECEC Building\, 154 Summit Street\, Newark\,
  NJ 07102\, NJIT\, Newark\, New Jersey\, United States\, 07102
ORGANIZER:dmisra@njit.edu
SEQUENCE:45
SUMMARY:EDS Distinguished Lecture: Compacting Models: The Art of Compact Mo
 deling (Unification of Compact Models with the Unified Regional Modeling A
 pproach)
URL;VALUE=URI:https://events.vtools.ieee.org/m/430506
X-ALT-DESC:Description: &lt;br /&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;text-align: justi
 fy\; text-justify: inter-ideograph\; text-indent: .25in\;&quot;&gt;&lt;span style=&quot;fo
 nt-size: 12.0pt\; mso-fareast-font-family: &#39;MS Mincho&#39;\;&quot;&gt;Compact Models (
 CMs) for circuit simulation have been at the heart of CAD tools for bridgi
 ng circuit design and technology development over the past decades.&lt;span s
 tyle=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\; &lt;/span&gt;In this talk\, we begin with an 
 overview of the historical role of CMs and fundamental equations.&lt;span sty
 le=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\; &lt;/span&gt;Evolution of MOSFET CMs\, from bul
 k to SOI and FinFETs\, is reviewed and their inter-relationships discussed
 .&lt;span style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\; &lt;/span&gt;Unification of CMs with 
 the unified regional modeling (URM) approach is presented\, together with 
 model validation with numerical data and verification with experimental da
 ta.&lt;span style=&quot;mso-spacerun: yes\;&quot;&gt;&amp;nbsp\; &lt;/span&gt;Model extension to III
 -V HEMTs including 2-dimensional electron gas (2DEG) in multiple sub-bands
  and trap-charge effects is presented.&lt;/span&gt;&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /
 &gt;&lt;p&gt;Event Time: 4:45 PM to 6:30 PM&lt;/p&gt;\n&lt;p&gt;4:45 PM Refreshments and Networ
 king&lt;/p&gt;\n&lt;p&gt;&lt;span style=&quot;font-family: -apple-system\, BlinkMacSystemFont\
 , &#39;Segoe UI&#39;\, Roboto\, Oxygen\, Ubuntu\, Cantarell\, &#39;Open Sans&#39;\, &#39;Helve
 tica Neue&#39;\, sans-serif\;&quot;&gt;5:00&amp;nbsp\;&lt;/span&gt;&lt;span style=&quot;font-family: -ap
 ple-system\, BlinkMacSystemFont\, &#39;Segoe UI&#39;\, Roboto\, Oxygen\, Ubuntu\, 
 Cantarell\, &#39;Open Sans&#39;\, &#39;Helvetica Neue&#39;\, sans-serif\;&quot;&gt;PM Talk by &lt;spa
 n style=&quot;font-size: 12.0pt\; font-family: &#39;Times New Roman&#39;\,serif\; mso-f
 areast-font-family: SimSun\; mso-ansi-language: EN-US\; mso-fareast-langua
 ge: EN-US\; mso-bidi-language: AR-SA\;&quot;&gt;&lt;strong&gt;Dr. Xing Zhou&lt;/strong&gt; &lt;/s
 pan&gt;&lt;strong&gt;&amp;nbsp\;EDS DL&lt;/strong&gt;&lt;span style=&quot;font-size: 12.0pt\; font-fa
 mily: &#39;Times New Roman&#39;\,serif\; mso-fareast-font-family: SimSun\; mso-ans
 i-language: EN-US\; mso-fareast-language: EN-US\; mso-bidi-language: AR-SA
 \;&quot;&gt;\, Singapore&lt;/span&gt;&lt;/span&gt;&lt;span style=&quot;font-family: -apple-system\, Bl
 inkMacSystemFont\, &#39;Segoe UI&#39;\, Roboto\, Oxygen\, Ubuntu\, Cantarell\, &#39;Op
 en Sans&#39;\, &#39;Helvetica Neue&#39;\, sans-serif\;&quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&lt;span s
 tyle=&quot;font-family: -apple-system\, BlinkMacSystemFont\, &#39;Segoe UI&#39;\, Robot
 o\, Oxygen\, Ubuntu\, Cantarell\, &#39;Open Sans&#39;\, &#39;Helvetica Neue&#39;\, sans-se
 rif\;&quot;&gt;Seminar is in ECEC 202. &lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&lt;span style=&quot;font-family: -
 apple-system\, BlinkMacSystemFont\, &#39;Segoe UI&#39;\, Roboto\, Oxygen\, Ubuntu\
 , Cantarell\, &#39;Open Sans&#39;\, &#39;Helvetica Neue&#39;\, sans-serif\;&quot;&gt;All Welcome: 
 There is no fee/charge for attending IEEE technical seminar. You don&#39;t hav
 e to be an IEEE Member to attend. Refreshments are free for all attendees.
  Please invite your friends and colleagues to take advantage of this Invit
 ed Distinguished Lecture.&lt;/span&gt;&lt;/p&gt;
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