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DESCRIPTION:Novel hard-mask materials for future semiconductor manufacturin
 g\n\nRapid prototyping of etch test structures for hard mask development u
 sing electron beam lithography\n\n[]\n\nAbstract:\n\nSemiconductor manufac
 turing depends on the development of new processes\, advanced patterning\,
  and novel materials to create smaller and higher performing devices to fo
 llow the industry roadmaps for applications for computing and systems (suc
 h as smartphones and servers).\n\nFor Dynamic Random Access Memory (DRAM) 
 applications\, more innovation is needed to sustain the high aspect ratios
  required in the capacitor’s architecture - whether it is moving towards
  3D architectures or developing new materials to sustain the challenge of 
 scaling.\n\nTo accelerate the learning\, it is essential to screen novel h
 ard mask (HM) materials in a rapid fashion to speed their development.\n\n
 The primary goal of this work is to create a path for rapidly screening of
  HM materials which are still under early phase development\, and which ar
 e prepared in small chamber tools (coupon chambers) and therefore not read
 y for 300 mm process integration.\n\n[]\n\nBio:\n\nLuisa Bozano:\n\nDirect
 or of Patterning Engineering\, Applied Materials\n\nHer interests at the i
 nterface of physics\, material science and chemistry led her to pursue adv
 anced studies at UC Santa Cruz after receiving her Laurea degree in Physic
 s from the University of Genoa in her native Italy.\n\nWhile receiving her
  doctorate\, she joined IBM Almaden Research.\n\nHer work at IBM ranged fr
 om the application of metal oxides and polymers to sensors and electronics
 \, to development of resist materials and e-beam methods for improved opti
 cal mask lithography. Her leadership in these spaces yielded over 30 issue
 d patents\, and as impressively\, successful transfer and commercializatio
 n of patterning materials to external collaborators.\n\nLuisa now leads Ap
 plied Materials&#39; interests in advanced patterning\, from e-beam to packagi
 ng\, as Director of Patterning Engineering.\n\nBldg: ==&gt; Use corner entran
 ce: Kifer Road / San Lucar Court ==&gt; Do not enter at main entrance on Kife
 r Road\, EAG Labs\, 810 Kifer Road\, Sunnyvale\, California\, California\,
  United States\, 95051
LOCATION:Bldg: ==&gt; Use corner entrance: Kifer Road / San Lucar Court ==&gt; Do
  not enter at main entrance on Kifer Road\, EAG Labs\, 810 Kifer Road\, Su
 nnyvale\, California\, California\, United States\, 95051
ORGANIZER:G.M.Friedman@ieee.org
SEQUENCE:33
SUMMARY:Novel hard-mask materials for future semiconductor manufacturing
URL;VALUE=URI:https://events.vtools.ieee.org/m/434339
X-ALT-DESC:Description: &lt;br /&gt;&lt;div class=&quot;eds-l-mar-vert-6 eds-l-sm-mar-ver
 t-4 eds-text-bm structured-content-rich-text&quot;&gt;\n&lt;div class=&quot;eds-text--left
 &quot;&gt;\n&lt;h1 class=&quot;event-title css-0&quot;&gt;Novel hard-mask materials for future sem
 iconductor manufacturing&lt;/h1&gt;\n&lt;h1&gt;&lt;em&gt;&lt;strong&gt;Rapid prototyping of etch t
 est structures for hard mask development using electron beam lithography&lt;/
 strong&gt;&lt;/em&gt;&lt;/h1&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div class=&quot;&quot; data-testid=&quot;image-conten
 t&quot;&gt;\n&lt;div class=&quot;eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-text-bm undefine
 d&quot;&gt;\n&lt;div&gt;\n&lt;div class=&quot;eds-fx--fade-in&quot;&gt;&lt;img class=&quot;eds-max-img&quot; src=&quot;htt
 ps://events.vtools.ieee.org/vtools_ui/media/display/c39d0ea0-74fe-42b5-acd
 5-f16fc92a303c&quot; alt=&quot;&quot; width=&quot;498&quot; height=&quot;360&quot; loading=&quot;lazy&quot;&gt;&lt;/div&gt;\n&lt;/d
 iv&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div class=&quot;eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-
 text-bm structured-content-rich-text&quot;&gt;\n&lt;div class=&quot;eds-text--left&quot;&gt;\n&lt;p&gt;&amp;
 nbsp\;&lt;/p&gt;\n&lt;h3&gt;&lt;strong&gt;Abstract:&lt;/strong&gt;&lt;/h3&gt;\n&lt;h3&gt;Semiconductor manufac
 turing depends on the development of new processes\, advanced patterning\,
  and novel materials to create smaller and higher performing devices to fo
 llow the industry roadmaps for applications for computing and systems (suc
 h as smartphones and servers).&lt;/h3&gt;\n&lt;h3&gt;For Dynamic Random Access Memory 
 (DRAM) applications\, more innovation is needed to sustain the high aspect
  ratios required in the capacitor&amp;rsquo\;s architecture - whether it is mo
 ving towards 3D architectures or developing new materials to sustain the c
 hallenge of scaling.&lt;/h3&gt;\n&lt;h3&gt;To accelerate the learning\, it is essentia
 l to screen novel hard mask (HM) materials in a rapid fashion to speed the
 ir development.&lt;/h3&gt;\n&lt;h3&gt;The primary goal of this work is to create a pat
 h for rapidly screening of HM materials which are still under early phase 
 development\, and which are prepared in small chamber tools (coupon chambe
 rs) and therefore not ready for 300 mm process integration.&lt;/h3&gt;\n&lt;/div&gt;\n
 &lt;/div&gt;\n&lt;div class=&quot;&quot; data-testid=&quot;image-content&quot;&gt;\n&lt;div class=&quot;eds-l-mar-
 vert-6 eds-l-sm-mar-vert-4 eds-text-bm undefined&quot;&gt;\n&lt;div&gt;\n&lt;div class=&quot;eds
 -fx--fade-in&quot;&gt;&lt;img class=&quot;eds-max-img&quot; src=&quot;https://events.vtools.ieee.org
 /vtools_ui/media/display/f82c828e-5a3d-43ff-8670-917a512c1171&quot; alt=&quot;&quot; widt
 h=&quot;597&quot; height=&quot;336&quot; loading=&quot;lazy&quot;&gt;&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;/div&gt;\n&lt;div c
 lass=&quot;eds-l-mar-vert-6 eds-l-sm-mar-vert-4 eds-text-bm structured-content-
 rich-text&quot;&gt;\n&lt;div class=&quot;eds-text--left&quot;&gt;\n&lt;h3&gt;Bio:&lt;/h3&gt;\n&lt;h3&gt;Luisa Bozano
 :&lt;/h3&gt;\n&lt;h3&gt;Director of Patterning Engineering\, Applied Materials&lt;/h3&gt;\n&lt;
 h3&gt;Her interests at the interface of physics\, material science and chemis
 try led her to pursue advanced studies at UC Santa Cruz after receiving he
 r Laurea degree in Physics from the University of Genoa in her native Ital
 y.&lt;/h3&gt;\n&lt;h3&gt;While receiving her doctorate\, she joined IBM Almaden Resear
 ch.&lt;/h3&gt;\n&lt;h3&gt;Her work at IBM ranged from the application of metal oxides 
 and polymers to sensors and electronics\, to development of resist materia
 ls and e-beam methods for improved optical mask lithography. Her leadershi
 p in these spaces yielded over 30 issued patents\, and as impressively\, s
 uccessful transfer and commercialization of patterning materials to extern
 al collaborators.&lt;/h3&gt;\n&lt;h3&gt;Luisa now leads Applied Materials&#39; interests i
 n advanced patterning\, from e-beam to packaging\, as Director of Patterni
 ng Engineering.&lt;/h3&gt;\n&lt;/div&gt;\n&lt;/div&gt;
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