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PRODID:IEEE vTools.Events//EN
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TZID:Asia/Kolkata
BEGIN:STANDARD
DTSTART:19451014T230000
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TZOFFSETTO:+0530
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BEGIN:VEVENT
DTSTAMP:20240921T141049Z
UID:CC906D33-0001-4B90-AEF4-EBA6AD8A7603
DTSTART;TZID=Asia/Kolkata:20240919T120000
DTEND;TZID=Asia/Kolkata:20240919T140000
DESCRIPTION:There are two major well known breakdowns in CMOS transistor’
 s history. Not until 2015\, a world first observation of the breakdown\, d
 ifferent from soft- and hard-breakdown\, named dielectric fuse breakdown\,
  dFuse\, was discovered\, as a milestone when CMOS technology was moved in
 to HKMG era.\n\nIn this talk\, I will introduce from the inception of the 
 Ig-RTN (Random Telegraph Noise) measurement on the understanding of breakd
 own in 2008 and briefly describe the fundamentals of RTN technique. Later 
 in 2015\, a version 2.0 of this Ig-RTN measurement\, named Ig-transient\, 
 was successfully developed to delineate the breakdown path in HKMG transis
 tors\, from which a third breakdown\, named dielectric fuse breakdown\, wa
 s discovered. Its origin and physical mechanism will be discussed. This br
 eakdown relies on the understanding of a leakage path in the gate dielectr
 ic of MOSFET\, especially the movement of oxygen ions and the oxygen vacan
 cies in the gate dielectric. In the end\, two major applications in memori
 es are presented\, one is in the use of One-Time-Programming memory and th
 e other one is on the understanding of the switching phenomena involved in
  the operation of Resistance Random Access Memory (RRAM).\n\nSpeaker(s): P
 rof Steve Chung \, \n\nECE Conference Room\, Department of Electronics & C
 ommunication Engineering\, Roorkee\, Uttaranchal\, India\, 247667\, Virtua
 l: https://events.vtools.ieee.org/m/434697
LOCATION:ECE Conference Room\, Department of Electronics & Communication En
 gineering\, Roorkee\, Uttaranchal\, India\, 247667\, Virtual: https://even
 ts.vtools.ieee.org/m/434697
ORGANIZER:rahul_kg@ece.iitr.ac.in
SEQUENCE:31
SUMMARY:Third Breakdown : The Discovery and Its Applications in HKMG Genera
 tion CMOS and Nonvolatile Memories
URL;VALUE=URI:https://events.vtools.ieee.org/m/434697
X-ALT-DESC:Description: <br /><p><img src="https://events.vtools.ieee.org/v
 tools_ui/media/display/1891172d-e252-449e-9d0c-4cde2d0e2388"></p>\n<p clas
 s="MsoNormal" style="text-align: justify\; text-justify: inter-ideograph\;
  line-height: 115%\; mso-layout-grid-align: none\; text-autospace: none\;"
 ><span lang="EN-US" style="mso-bidi-font-size: 12.0pt\; line-height: 115%\
 ;">There are two major well known breakdowns in CMOS transistor&rsquo\;s h
 istory. Not until 2015\, a world first observation of the breakdown\, diff
 erent from soft- and hard-breakdown\, named dielectric fuse breakdown\, <s
 trong>dFuse</strong>\, was discovered\, as a milestone when CMOS technolog
 y was moved into HKMG era.&nbsp\;</span></p>\n<p class="MsoNormal" style="
 text-align: justify\; text-justify: inter-ideograph\; line-height: 115%\; 
 mso-layout-grid-align: none\; text-autospace: none\;"><span lang="EN-US" s
 tyle="mso-bidi-font-size: 12.0pt\; line-height: 115%\; mso-bidi-font-weigh
 t: bold\;">In this talk\, I will&nbsp\;</span><span lang="EN-US" style="ms
 o-bidi-font-weight: bold\;">introduce from the inception of the Ig-RTN (Ra
 ndom Telegraph Noise) measurement on the understanding of breakdown in 200
 8 and briefly describe the fundamentals of RTN technique. Later in 2015\, 
 a version 2.0 of this Ig-RTN measurement\, named Ig-transient\, was succes
 sfully developed to delineate the breakdown path in HKMG transistors\, fro
 m which a third breakdown\, named dielectric fuse breakdown\, was discover
 ed. Its origin and physical mechanism will be discussed. This breakdown re
 lies on the understanding of a leakage path in the gate dielectric of MOSF
 ET\, especially the movement of oxygen ions and the oxygen vacancies in th
 e gate dielectric. In the end\, two major applications in memories are pre
 sented\, one is in the use of One-Time-Programming memory and the other on
 e is on the understanding of the switching phenomena involved in the opera
 tion of Resistance Random Access Memory (RRAM).</span></p>
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