BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20240310T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20241030T132914Z UID:36F5689B-EC71-4E27-AEEF-0CD1EE32BE54 DTSTART;TZID=America/Los_Angeles:20241029T183000 DTEND;TZID=America/Los_Angeles:20241029T200000 DESCRIPTION:The combined Santa Clara Valley\, San Francisco\, & Oakland/Eas t Bay IEEE PELS is very pleased to invite you to our upcoming in-person ev ent. We are excited and honored to have Prof. Uttam Singisetti of the Univ ersity at Buffalo to speak on the topic of Potential and challenges in gal lium oxide\, the next generation power semiconductor technology.\n\nHere's more about the talk from the Speaker:\n\nThe monoclinic -gallium oxide (Ga2O3) (bandgap 4.8 eV) is one of several ultra-widebandgap semiconducto rs (UWBGs) that have garnered a lot of interest as next generation power s emiconductor technology. Since the first demonstration of a MESFET in 2012 \, Ga2O3 device research has progressed at an incredible pace with reports of MOSFETs and diodes achieving 10 kV breakdown voltages. Gallium oxide d evices have also achieved impressive high power device figure of merit\, h igh average field strengths and high-speed performance. The high critical electric field\, good electron mobility\, multiple shallow donors\, availa bility of large area substrates and growth of high-quality epitaxial films \; have all contributed to the rapid progress in device performance. As a result\, it has emerged as a promising ultra-widebandgap semiconductor for next generation power\, GHz switching and RF applications. In addition to the large Baliga’s Figure of Merit (BFoM)\; good electron mobility\, ca lculated electron velocities lead to higher Johnston’s Figures of Merit (JFoM). Additionally\, the large bandgap also enables high temperature ope ration and radiation hardness making it attractive for space applications such as Mars and Venus missions. This talk will present the most recent ad vances in gallium oxide devices\; both from our group and others. We will present the lateral MOSFETs with improved field plate design and beyond-kV breakdown. Temperature dependent analysis and device simulation suggest a n extrinsic breakdown mechanism outside the channel. A simple and yet effe ctive SU-8 polymer passivation technology provides a significant improveme nt in breakdown voltages. The higher field strength of the SU-8 polymer en ables a significant increase in breakdown voltage to 8.5 kV in lateral MOS FETs. However\, these devices show a high Ron\, which is due to the deplet ion caused by RIE of the channel. We will present the use of ultra-high va cuum annealing techniques to improve the on-resistance of the devices stil l maintaining the multi-kilo-volt rating of the devices. We will also pres ent on-wafer individual device level switching characteristics. I will dis cuss the progress made on vertical Schottky barrier diodes (SBDs) which ha ve rapidly achieved both high voltages and high-power deice figures of mer it. Several groups have incorporated nickel-oxide/gallium oxide hetero-jun ction p-n diodes to successfully overcome the absence of p-doping in galli um oxide. High surge-current capability and unclamped inductive switching (UIS) have been demonstrated in these devices despite the low thermal cond uctivity. Finally\, I will discuss the approaches that could address the c hallenges in this semiconductor system (low thermal conductivity and absen ce of p-doping). I will conclude by discussing the factors that could pote ntially lead to successful lab-to-fab transition in this exciting next gen eration power semiconductor technology.\n\nSpeaker(s): \, Dr. Uttam Singis etti\n\nPlug and Play Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, Californi a\, United States\, 94085 LOCATION:Plug and Play Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, Californi a\, United States\, 94085 ORGANIZER:haravesudarshan@ieee.org SEQUENCE:24 SUMMARY:Potential and challenges in gallium oxide\, the next generation pow er semiconductor technology URL;VALUE=URI:https://events.vtools.ieee.org/m/438918 X-ALT-DESC:Description: <br /><p>The combined Santa Clara Valley\, San Fran cisco\, &amp\; Oakland/East Bay IEEE PELS is very pleased to invite you to our upcoming in-person event. We are excited and honored to have Prof. Ut tam Singisetti of the University at Buffalo to speak on the topic of Poten tial and challenges in gallium oxide\, the next generation power semicondu ctor technology.</p>\n<p>Here's more about the talk from the Speaker:</p>\ n<p>The monoclinic -gallium oxide (Ga2O3) (bandgap 4.8 eV) is one of se veral ultra-widebandgap&nbsp\;semiconductors (UWBGs) that have garnered a lot of interest as next generation power semiconductor&nbsp\;technology. S ince the first demonstration of a MESFET in 2012\, Ga2O3 device research h as progressed at&nbsp\;an incredible pace with reports of MOSFETs and diod es achieving 10 kV breakdown voltages. Gallium&nbsp\;oxide devices have al so achieved impressive high power device figure of merit\, high average fi eld strengths&nbsp\;and high-speed performance. The high critical electric field\, good electron mobility\, multiple shallow&nbsp\;donors\, availabi lity of large area substrates and growth of high-quality epitaxial films\; have all contributed&nbsp\;to the rapid progress in device performance. A s a result\, it has emerged as a promising ultra-widebandgap&nbsp\;semicon ductor for next generation power\, GHz switching and RF applications. In a ddition to the large&nbsp\;Baliga&rsquo\;s Figure of Merit (BFoM)\; good e lectron mobility\, calculated electron velocities lead to higher&nbsp\;Joh nston&rsquo\;s Figures of Merit (JFoM). Additionally\, the large bandgap a lso enables high temperature&nbsp\;operation and radiation hardness making it attractive for space applications such as Mars and Venus&nbsp\;mission s.&nbsp\;This talk will present the most recent advances in gallium oxide devices\; both from our group and others.&nbsp\;We will present the latera l MOSFETs with improved field plate design and beyond-kV breakdown.&nbsp\; Temperature dependent analysis and device simulation suggest an extrinsic breakdown mechanism outside&nbsp\;the channel. A simple and yet effective SU-8 polymer passivation technology provides a significant&nbsp\;improveme nt in breakdown voltages. The higher field strength of the SU-8 polymer en ables a significant&nbsp\;increase in breakdown voltage to 8.5 kV in later al MOSFETs. However\, these devices show a high Ron\,&nbsp\;which is due t o the depletion caused by RIE of the channel. We will present the use of u ltra-high vacuum&nbsp\;annealing techniques to improve the on-resistance o f the devices still maintaining the multi-kilo-volt rating&nbsp\;of the de vices. We will also present on-wafer individual device level switching cha racteristics. I will discuss the progress made on vertical Schottky barrie r diodes (SBDs) which have rapidly achieved&nbsp\;both high voltages and h igh-power deice figures of merit. Several groups have incorporated nickel- oxide/gallium oxide hetero-junction p-n diodes to successfully overcome th e absence of p-doping in gallium&nbsp\;oxide. High surge-current capabilit y and unclamped inductive switching (UIS) have been demonstrated in&nbsp\; these devices despite the low thermal conductivity.&nbsp\;Finally\, I will discuss the approaches that could address the challenges in this semicond uctor system (low&nbsp\;thermal conductivity and absence of p-doping). I w ill conclude by discussing the factors that could&nbsp\;potentially lead t o successful lab-to-fab transition in this exciting next generation power semiconductor&nbsp\;technology.</p> END:VEVENT END:VCALENDAR