BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20250309T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20241206T033049Z UID:A965FD2D-370E-468B-A744-40049D445E01 DTSTART;TZID=America/New_York:20241205T150000 DTEND;TZID=America/New_York:20241205T170000 DESCRIPTION:Wide bandgap semiconductor devices based on gallium nitride (Ga N) offer myriads of advantages over traditional silicon (Si)-based devices for applications in power electronics. These advantages include higher vo ltage-handling capability with associated low conduction loss\, as well as faster switching capabilities\, allowing for reduced filtering components within converter topologies\, thus leading to improved power density. Des pite the many advantages of GaN devices\, several challenges related to te chnological readiness level (TRL) and practical implementation have hinder ed their widespread adoption\, particularly at high voltage. For these rea sons\, advanced characterization methods for GaN semiconductors are needed \, so that these devices can realize their full performance entitlement.\n \nThis talk will present a broad array of new characterization and modelin g methodologies for future GaN diodes\, MOSFETs\, and novel Photoconductiv e Semiconductor Switches (PCSS). The presented work will include device ph ysics simulations using finite element modeling techniques\, which facilit ate the design of new architectures of vertical GaN diodes that are capabl e of withstanding high voltages. Relative to conventional bevel-angle diod es\, the proposed “hybrid edge termination” structure is much simpler\ , yet produces similar breakdown characteristics. It will be shown that th e simulated designs can be used to fabricate and empirically characterize the static and dynamic performance of the 1.2 kV diodes. The empirically v alidated diode simulations inform and guide the design of high voltage GaN MOSFETs\, leading to the development of scaling rules which can reasonabl y project the performance of future GaN devices up to 20 kV. To address po tential forthcoming challenges related to Electromagnetic Interference (EM I)\, a novel GaN-based PCSS device is proposed and characterized. PCSS dev ices are optically triggered\, thereby electrically decoupling the input a nd output ports of the device\, allowing for EMI mitigation. A new “Casc aded Double Pulse Test” (C-DPT) is used to empirically characterize the dynamic performance of the PCSS device. The C-DPT consists of a low-voltag e DPT\, strategically positioned overtop of a high-voltage DPT. The low vo ltage DPT drives a UV LED\, acting as the freewheeling diode to provide op tical triggering to the PCSS device\, which is implemented on the high-vol tage DPT. This novel proof-of-concept circuit can inform the design of nex t-generation power converters utilizing PCSS devices. Finally\, the disper sive effect of the parasitic components contained in high-frequency GaN-ba sed circuits is evaluated. As the spectral content in GaN-based circuits i s infringing on frequencies previously only observed in the RF domain\, ne w characterization and modeling techniques are needed. This talk will demo nstrate that the extended spectral content\, orders of magnitude above the switching frequency\, associated with GaN-based converters is causing the parasitic components of the circuit to exhibit frequency-dependence. Stra tegies to account for\, and predict this behavior will be presented. The t alk will conclude with applying learned lessons from wide bandgap semicond uctors to develop a roadmap towards the design of ultra-wide bandgap devic es\, such as gallium oxide\, or aluminum nitride.\n\nSpeaker(s): Raghav Kh anna\, \n\nRoom: EV3.309\, Bldg: Engineering Building\, Concordia Univers ity\, 1515 St. Catherine W\, Montreal\, Quebec\, Canada\, H3G1M8 LOCATION:Room: EV3.309\, Bldg: Engineering Building\, Concordia University \, 1515 St. Catherine W\, Montreal\, Quebec\, Canada\, H3G1M8 ORGANIZER:parth.patel.1@ens.etsmtl.ca SEQUENCE:31 SUMMARY:Evaluating the High Voltage and High Frequency Capability of Future GaN-Based Diodes\, MOSFETs\, and Novel Photoconductive Switches URL;VALUE=URI:https://events.vtools.ieee.org/m/443329 X-ALT-DESC:Description: <br /><p>Wide bandgap semiconductor devices based o n gallium nitride (GaN) offer myriads of advantages over traditional silic on (Si)-based devices for applications in power electronics. These advanta ges include higher voltage-handling capability with associated low conduct ion loss\, as well as faster switching capabilities\, allowing for reduced filtering components within converter topologies\, thus leading to improv ed power density. Despite the many advantages of GaN devices\, several cha llenges related to technological readiness level (TRL) and practical imple mentation have hindered their widespread adoption\, particularly at high v oltage. For these reasons\, advanced characterization methods for GaN semi conductors are needed\, so that these devices can realize their full perfo rmance entitlement.</p>\n<p>&nbsp\;</p>\n<p>This talk will present a broad array of new characterization and modeling methodologies for future GaN d iodes\, MOSFETs\, and novel Photoconductive Semiconductor Switches (PCSS). The presented work will include device physics simulations using finite e lement modeling techniques\, which facilitate the design of new architectu res of vertical GaN diodes that are capable of withstanding high voltages. Relative to conventional bevel-angle diodes\, the proposed &ldquo\;hybrid edge termination&rdquo\; structure is much simpler\, yet produces similar breakdown characteristics. It will be shown that the simulated designs ca n be used to fabricate and empirically characterize the static and dynamic performance of the 1.2 kV diodes. The empirically validated diode simulat ions inform and guide the design of high voltage GaN MOSFETs\, leading to the development of scaling rules which can reasonably project the performa nce of future GaN devices up to 20 kV. To address potential forthcoming ch allenges related to Electromagnetic Interference (EMI)\, a novel GaN-based PCSS device is proposed and characterized. PCSS devices are optically tri ggered\, thereby electrically decoupling the input and output ports of the device\, allowing for EMI mitigation. A new &ldquo\;Cascaded Double Pulse Test&rdquo\; (C-DPT) is used to empirically characterize the dynamic perf ormance of the PCSS device. The C-DPT consists of a low-voltage DPT\, stra tegically positioned overtop of a high-voltage DPT. The low voltage DPT dr ives a UV LED\, acting as the freewheeling diode to provide optical trigge ring to the PCSS device\, which is implemented on the high-voltage DPT. Th is novel proof-of-concept circuit can inform the design of next-generation power converters utilizing PCSS devices. Finally\, the dispersive effect of the parasitic components contained in high-frequency GaN-based circuits is evaluated. As the spectral content in GaN-based circuits is infringing on frequencies previously only observed in the RF domain\, new characteri zation and modeling techniques are needed. This talk will demonstrate that the extended spectral content\, orders of magnitude above the switching f requency\, associated with GaN-based converters is causing the parasitic c omponents of the circuit to exhibit frequency-dependence. Strategies to ac count for\, and predict this behavior will be presented. The talk will con clude with applying learned lessons from wide bandgap semiconductors to de velop a roadmap towards the design of ultra-wide bandgap devices\, such as gallium oxide\, or aluminum nitride.</p> END:VEVENT END:VCALENDAR