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DTSTAMP:20241114T171319Z
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DTSTART;TZID=America/New_York:20241113T110000
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DESCRIPTION:Abstract:\n\nJoin us for an in-depth exploration of Nanoscale M
 OSFET Simulation using the Subband Boltzmann Transport Equation (SBTE)\, p
 owered by the advanced GTS Nano Device Simulator (NDS). This webinar will 
 guide you through the fundamentals of simulating MOSFETs at the nanoscale\
 , focusing on device performance and transport phenomena. We will demonstr
 ate live simulations and cover not only traditional silicon-based MOSFETs 
 but also cutting-edge 1D and 2D materials like transition metal dichalcoge
 nides (TMDs)\, graphene\, and carbon nanotubes. Attendees will gain hands-
 on insights into modeling these materials and learn how to leverage the SB
 TE for advanced device design.\n\nCo-sponsored by: TC 10 Co-Chair\, Josef 
 Weinbub\n\nAgenda: \n\n\nVirtual: https://events.vtools.ieee.org/m/444325
LOCATION:Virtual: https://events.vtools.ieee.org/m/444325
ORGANIZER:bettermann@ieee.org
SEQUENCE:3
SUMMARY:2024 IEEE Nanotechnology Council NTC TC10 Modeling and Simulation N
 ovember Webinar
URL;VALUE=URI:https://events.vtools.ieee.org/m/444325
X-ALT-DESC:Description: <br /><p><strong>Abstract:</strong></p>\n<p>Join us
  for an in-depth exploration of Nanoscale MOSFET Simulation using the Subb
 and Boltzmann Transport Equation (SBTE)\, powered by the advanced GTS Nano
  Device Simulator (NDS). This webinar will guide you through the fundament
 als of simulating MOSFETs at the nanoscale\, focusing on device performanc
 e and transport phenomena. We will demonstrate live simulations and cover 
 not only traditional silicon-based MOSFETs but also cutting-edge 1D and 2D
  materials like transition metal dichalcogenides (TMDs)\, graphene\, and c
 arbon nanotubes. Attendees will gain hands-on insights into modeling these
  materials and learn how to leverage the SBTE for advanced device design.<
 /p><br /><br />Agenda: <br /><p>&nbsp\;</p>\n<p class="MsoNormal">&nbsp\;<
 /p>
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