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DTSTAMP:20170314T180657Z
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DESCRIPTION:A newfangled paradigm through deployment of the nonequilibrium 
 Arora’s distribution function (NEADF) for resistance surge in low-dimens
 ional nano-resistors is presented\, with applications to carbon-based devi
 ces. The key outcome is that the Ohm’s Law with linear I-V characteristi
 cs cannot be used for devices approaching micro- and nano-scale. A nano-re
 sistor\, in addition to having ohmic resistance\, also necessitates the va
 lue of the critical voltage for its complete description. This critical vo
 ltage is proportional to the length of the resistor. In macro resistors of
  yesteryears\, the critical voltage is much larger than the applied voltag
 e\, with infinity as the default value. However\, as devices are scaled do
 wn to the nanometer dimensions\, the critical voltage is much lower than t
 he applied voltage\, including the traditional 5 V or even 1 V as the high
 er logic level for VLSI devices. As the applied voltage becomes larger tha
 n the critical voltage\, Arora’s Law predicts current saturation due to 
 velocity saturation. The random velocity vectors in equilibrium transform 
 to streamlined velocity vectors in a high electric field that is necessari
 ly high in scaled down dimensions. The saturation current is thus limited 
 by the intrinsic velocity vectors that become streamlined and hence ballis
 tic in the sense that scattering does not play any active role in saturati
 on. As I-V characteristics become nonlinear\, the distinction between dire
 ct and differential resistance takes on an increasing importance due to dr
 amatic rise in the differential resistance. The experimental nonlinear I-V
  characteristics\, when voltage across the length of a resistor is higher 
 than its critical value\, defy ohmic and ballistic transmission through a 
 nano-resistor. Arora’s Law embraces well the Ohm’s Law when applied vo
 ltage is smaller than the critical voltage. It is shown that the smaller-l
 ength resistor becomes more resistive in a circuit where two resistors of 
 the same ohmic value are used in series or parallel configuration. Transit
  time delay gives way to enhanced RC time delay and is the major limiting 
 factor for signal propagation in ultra-large scale integration (ULSI) on a
  chip. Inductive L/R time constants are suppressed. The lecture will cover
  landscape from basic sciences to engineering with a touch of liberal arts
  that is talk of the day for an outcome-based education (OBE) making Engin
 eering an Art in the Application of the Liberal Arts kindling STEAM (Scien
 ce\, Technology\, Engineering\, Arts\, and Mathematics).\n\nCo-sponsored b
 y: russbogardus@comcast.net\n\nSpeaker(s): \, \, \, \n\nBldg: Osburne Cent
 er\, B 134\, Science and Engineering Building\, University of Colorado at 
 Colorado Springs\, Colorado Springs\, Colorado\, United States\, 80910
LOCATION:Bldg: Osburne Center\, B 134\, Science and Engineering Building\, 
 University of Colorado at Colorado Springs\, Colorado Springs\, Colorado\,
  United States\, 80910
ORGANIZER:tkalkur@uccs.edu
SEQUENCE:0
SUMMARY:Ohm to Arora: A New Paradigm for Nanoscale Devices and Circuits
URL;VALUE=URI:https://events.vtools.ieee.org/m/44491
X-ALT-DESC:Description: <br /><p>A newfangled paradigm through deployment o
 f the nonequilibrium Arora&rsquo\;s distribution function (NEADF) for resi
 stance surge in low-dimensional nano-resistors is presented\, with applica
 tions to carbon-based devices. The key outcome is that the Ohm&rsquo\;s La
 w with linear I-V characteristics cannot be used for devices approaching m
 icro- and nano-scale. A nano-resistor\, in addition to having ohmic resist
 ance\, also necessitates the value of the critical voltage for its complet
 e description. This critical voltage is proportional to the length of the 
 resistor.&nbsp\; In macro resistors of yesteryears\, the critical voltage 
 is much larger than the applied voltage\, with infinity as the default val
 ue. However\, as devices are scaled down to the nanometer dimensions\, the
  critical voltage is much lower than the applied voltage\, including the t
 raditional 5 V or even 1 V as the higher logic level for VLSI devices. As 
 the applied voltage becomes larger than the critical voltage\, Arora&rsquo
 \;s Law predicts current saturation due to velocity saturation.&nbsp\; The
  random velocity vectors in equilibrium transform to streamlined velocity 
 vectors in a high electric field that is necessarily high in scaled down d
 imensions. The saturation current is thus limited by the intrinsic velocit
 y vectors that become streamlined and hence ballistic in the sense that sc
 attering does not play any active role in saturation. As I-V characteristi
 cs become nonlinear\, the distinction between direct and differential resi
 stance takes on an increasing importance due to dramatic rise in the diffe
 rential resistance. The experimental nonlinear I-V characteristics\, when 
 voltage across the length of a resistor is higher than its critical value\
 , defy ohmic and ballistic transmission through a nano-resistor. Arora&rsq
 uo\;s Law embraces well the Ohm&rsquo\;s Law when applied voltage is small
 er than the critical voltage.&nbsp\; It is shown that the smaller-length r
 esistor becomes more resistive in a circuit where two resistors of the sam
 e ohmic value are used in series or parallel configuration. Transit time d
 elay gives way to enhanced RC time delay and is the major limiting factor 
 for signal propagation in ultra-large scale integration (ULSI) on a chip. 
 Inductive L/R time constants are suppressed. The lecture will cover landsc
 ape from basic sciences to engineering with a touch of liberal arts that i
 s talk of the day for an outcome-based education (OBE) making Engineering 
 an Art in the Application of the Liberal Arts kindling STEAM (Science\, Te
 chnology\, Engineering\, Arts\, and Mathematics).</p>
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