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DTSTART:20250330T030000
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DTSTAMP:20241222T193059Z
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DTSTART;TZID=Europe/Berlin:20241222T180000
DTEND;TZID=Europe/Berlin:20241222T193000
DESCRIPTION:Moore’s law is approaching its limits due to complications en
 countering the scaling process regarding power dissipation and reaching sc
 aling limits. New devices\, architectures and techniques are essential to 
 overcome these challenges and encounter the rapidly increasing demands of 
 future technologies and applications that will continue to revolutionize h
 ow current devices work. In this talk\, a brief insight is provided into t
 he latest trends studied to advance semiconductor and solid-state devices 
 as well as highlights on the roadmap drawn to meet the future needs.\n\nSp
 eaker(s): Dr. Yasmine Elogail\n\nVirtual: https://events.vtools.ieee.org/m
 /447448
LOCATION:Virtual: https://events.vtools.ieee.org/m/447448
ORGANIZER:moustafa.nawito@gmail.com
SEQUENCE:19
SUMMARY:Current and Future Trends of Solid-State Devices 
URL;VALUE=URI:https://events.vtools.ieee.org/m/447448
X-ALT-DESC:Description: <br /><p><span lang="EN-US" style="font-size: 14.0p
 t\; font-family: 'Times New Roman'\,serif\; mso-ascii-theme-font: major-bi
 di\; mso-hansi-theme-font: major-bidi\; mso-bidi-theme-font: major-bidi\;"
 >Moore&rsquo\;s law is approaching its limits due to complications encount
 ering the scaling process regarding power dissipation and reaching scaling
  limits. New devices\, architectures and techniques are essential to overc
 ome these challenges and encounter the rapidly increasing demands of futur
 e technologies and applications that will continue to revolutionize how cu
 rrent devices work. In this talk\, a brief insight is provided into the la
 test trends studied to advance semiconductor and solid-state devices as we
 ll as highlights on the roadmap drawn to meet the future needs.</span></p>
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