BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20250309T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20241103T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20241212T211129Z UID:99B6E4D6-9561-4371-9B73-A9D62019E3EC DTSTART;TZID=America/Los_Angeles:20241212T120000 DTEND;TZID=America/Los_Angeles:20241212T130000 DESCRIPTION:Recent progress in three-dimensional (3D) integration offers a unique opportunity to integrate low-dimensional semiconductors in a vertic ally stacked system for 3D integrated circuits. In this talk\, we will dis cuss modeling\, simulation\, and design of two-dimensional (2D) semiconduc tors and semiconductor quantum dots to enable neuromorphic and quantum com puting functionalities in an integrated system. A multiscale simulation ap proach is employed to model the stochastic switching characteristics of 2D -semiconductor-based devices for Boltzmann machines\, facilitating efficie nt solutions to optimization problems. Furthermore\, technology computer-a ided design (TCAD) offers valuable insights into operation principles\, qu antum noise limitations\, and quantum gate performance for semiconductor s pin-based quantum computing applications."\n\nBio:\n\nJing Guo is currentl y a professor in the Department of Electrical and Computer Engineering at the University of Florida\, Gainesville\, FL\, USA. His research work main ly focuses on modeling\, simulation\, and design of nanoscale electronic d evices. His group has extensively explored device physics\, assessed perfo rmance potentials\, and developed new device concepts for nanoscale transi stors based on carbon nanotubes\, graphene\, 2D materials and topological insulators\, and memory cells based on ferroelectric materials. His group has developed efficient simulation methods for quantum-transport-based dev ice simulations\, and physics-based models for nanoscale transistors. He h as also developed and contributed to some widely used simulation tools dep loyed on the nanoHUB\, such as CNTbands. He served in the technical progra m committee of the International Device Research Meeting (IEDM) and Device Research Conference (DRC). He also serves as an associate editor of Nano- Micro Letters. He coauthored a book “Nanoscale Transistors: Device Physi cs\, Modeling\, and Simulation.” Published by Springer.\n\nVirtual: http s://events.vtools.ieee.org/m/448712 LOCATION:Virtual: https://events.vtools.ieee.org/m/448712 ORGANIZER:hiuyung.wong@sjsu.edu SEQUENCE:2 SUMMARY:Modeling Low-Dimensional Semiconductors to Enable New Computing Fun ctionalities URL;VALUE=URI:https://events.vtools.ieee.org/m/448712 X-ALT-DESC:Description: <br /><p class="MsoNormal">Recent progress in three -dimensional (3D) integration offers a unique opportunity to integrate low -dimensional semiconductors in a vertically stacked system for 3D integrat ed circuits. In this talk\, we will discuss modeling\, simulation\, and de sign of two-dimensional (2D) semiconductors and semiconductor quantum dots to enable neuromorphic and quantum computing functionalities in an integr ated system.&nbsp\;&nbsp\;A multiscale simulation approach is employed to model the stochastic switching characteristics of 2D-semiconductor-based d evices for Boltzmann machines\, facilitating efficient solutions to optimi zation problems. Furthermore\, technology computer-aided design (TCAD) off ers valuable insights into operation principles\, quantum noise limitation s\, and quantum gate performance for semiconductor spin-based quantum comp uting applications."</p>\n<p class="MsoNormal">&nbsp\;</p>\n<p class="MsoN ormal">Bio:</p>\n<p class="MsoNormal">Jing Guo is currently a professor in the Department of Electrical and Computer Engineering at the University o f Florida\, Gainesville\, FL\, USA. His research work mainly focuses on mo deling\, simulation\, and design of nanoscale electronic devices. His grou p has extensively explored device physics\, assessed performance potential s\, and developed new device concepts for nanoscale transistors based on c arbon nanotubes\, graphene\, 2D materials and topological insulators\, and memory cells based on ferroelectric materials. His group has developed ef ficient simulation methods for quantum-transport-based device simulations\ , and physics-based models for nanoscale transistors. He has also develope d and contributed to some widely used simulation tools deployed on the nan oHUB\, such as CNTbands. He served in the technical program committee of t he International Device Research Meeting (IEDM) and Device Research Confer ence (DRC). He also serves as an associate editor of Nano-Micro Letters. H e coauthored a book &ldquo\;Nanoscale Transistors: Device Physics\, Modeli ng\, and Simulation.&rdquo\; Published by Springer.</p> END:VEVENT END:VCALENDAR