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DTSTAMP:20250210T104559Z
UID:B1E37443-6D57-46C3-9764-D5D33CF37155
DTSTART;TZID=Europe/Berlin:20250209T170000
DTEND;TZID=Europe/Berlin:20250209T183000
DESCRIPTION:From Ka-band satellite applications to automotive radars at 77 
 GHz\, systems in the upper microwave and millimeter-wave ranges are enable
 d by integrated circuits on Silicon wafers. And\, judging from current pub
 lication activities\, this trend will continue for the foreseeable future\
 , and toward even higher frequencies\, well into the THz range.\n\nWhen it
  comes to its physical properties\, Si is an unlikely competitor for group
  III-V materials such as GaAs or InP. Lossy substrates and lower electron 
 mobility\, for instance. So why is it so successful? Cost is the easiest a
 nswer\, but\, unless we're talking truly huge market sizes\, GaAs ICs can 
 be quite cost-competitive\, area-wise.\n\nSilicon as a substrate for micro
 wave circuits has been contemplated since at least 1965. Until the mid 199
 0s\, Silicon monolithic microwave ICs (MMICs) tried to imitate GaAs\, with
  limited success. The advent of Si/SiGe heterojunction bipolar transistors
  changed its approach drastically. The integrability of Si/SiGe HBTs into 
 established bipolar and BiCMOS processes allows microwave and millimeter-w
 ave chips with a high integration density\, combined with digital function
 ality\, and occasionally even micro-electro-mechanical structures.\n\nUsin
 g results from the literature as well as my own research\, I will talk abo
 ut the history of Si MMICs\, some milestones\, as well as current trends.\
 n\nSpeaker(s): Dr.-Ing. Hermann Schumacher\,  Professor\, Universität Ulm
  (retired)\n\nVirtual: https://events.vtools.ieee.org/m/452157
LOCATION:Virtual: https://events.vtools.ieee.org/m/452157
ORGANIZER:moustafa.nawito@gmail.com
SEQUENCE:20
SUMMARY:How (and why) Si won the race toward millimeter-wave ICs
URL;VALUE=URI:https://events.vtools.ieee.org/m/452157
X-ALT-DESC:Description: <br /><div>\n<div>From Ka-band satellite applicatio
 ns to automotive radars at 77 GHz\, systems in the upper microwave and mil
 limeter-wave ranges are enabled by integrated circuits on Silicon wafers. 
 And\, judging from current publication activities\, this trend will contin
 ue for the foreseeable future\, and toward even higher frequencies\, well 
 into the THz range.</div>\n<br>\n<div>When it comes to its physical proper
 ties\, Si is an unlikely competitor for group III-V materials such as GaAs
  or InP. Lossy substrates and lower electron mobility\, for instance. So w
 hy is it so successful? Cost is the easiest answer\, but\, unless we're ta
 lking truly huge market sizes\, GaAs ICs can be quite cost-competitive\, a
 rea-wise.</div>\n<br>\n<div>Silicon as a substrate for microwave circuits 
 has been contemplated since at least 1965. Until the mid 1990s\, Silicon m
 onolithic microwave ICs (MMICs) tried to imitate GaAs\, with limited succe
 ss. The advent of Si/SiGe heterojunction bipolar transistors changed its a
 pproach drastically. The integrability of Si/SiGe HBTs into established bi
 polar and BiCMOS processes allows microwave and millimeter-wave chips with
  a high integration density\, combined with digital functionality\, and oc
 casionally even micro-electro-mechanical structures.</div>\n<br>\n<div>Usi
 ng results from the literature as well as my own research\, I will talk ab
 out the history of Si MMICs\, some milestones\, as well as current trends.
 </div>\n</div>
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