BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Kolkata BEGIN:STANDARD DTSTART:19451014T230000 TZOFFSETFROM:+0630 TZOFFSETTO:+0530 TZNAME:IST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20241220T115809Z UID:A2426BAE-ECB6-4EF2-AD5D-757B42DC90A4 DTSTART;TZID=Asia/Kolkata:20241226T140000 DTEND;TZID=Asia/Kolkata:20241226T160000 DESCRIPTION:Major developments in the semiconductor industry are on the hor izon through the use of two-dimensional (2D) materials\, such as graphene and transition metal dichalcogenides\, for integrated circuits (ICs). This talk will address the comprehensive treatment of these materials and thei r applications in nanoelectronic devices. This talk would highlight the po tential of atomically thin\, two-dimensional materials like graphene\, tra nsition metal dichalcogenides (TMDs)\, and hexagonal boron nitride to revo lutionize nanoelectronics due to their exceptional electrical\, mechanical \, and thermal properties\, enabling the development of high-performance\, flexible\, and energy-efficient devices with unique functionalities like tunable bandgaps and high carrier mobility\, paving the way for advancemen ts in transistors\, optoelectronics\, and spintronics application\, explor es the exciting possibilities of two-dimensional (2D) materials\, such as graphene and transition metal dichalcogenides\, for next-generation nanoel ectronics. Their unique electronic properties\, including high carrier mob ility and tunable bandgaps\, offer significant advantages for the developm ent of high-performance transistors\, flexible electronics\, and optoelect ronic devices. While challenges remain in terms of large-scale synthesis a nd device integration\, ongoing research on 2D material heterostructures a nd strain engineering holds great promise for future advancements in the f ield of nanoelectronics 2D Materials for Nanoelectronics presents extensiv e\, state-of-the-art coverage of the fundamental and applied aspects of th is exciting field.\n\nSpeaker(s): Prof. Sangeeta Singh\, \n\nVirtual: http s://events.vtools.ieee.org/m/454784 LOCATION:Virtual: https://events.vtools.ieee.org/m/454784 ORGANIZER:rutuparekh@yahoo.com SEQUENCE:6 SUMMARY:2D Materials for Nanoelectronics URL;VALUE=URI:https://events.vtools.ieee.org/m/454784 X-ALT-DESC:Description: <br /><p>Major developments in the semiconductor in dustry are on the horizon through the use of two-dimensional (2D) material s\, such as graphene and transition metal dichalcogenides\, for integrated circuits (ICs). This talk will address the comprehensive treatment of the se materials and their applications in nanoelectronic devices. This talk w ould highlight the potential of atomically thin\, two-dimensional material s like graphene\, transition metal dichalcogenides (TMDs)\, and hexagonal boron nitride to revolutionize nanoelectronics due to their exceptional el ectrical\, mechanical\, and thermal properties\, enabling the development of high-performance\, flexible\, and energy-efficient devices with unique functionalities like tunable bandgaps and high carrier mobility\, paving t he way for advancements in transistors\, optoelectronics\, and spintronics application\, explores the exciting possibilities of two-dimensional (2D) materials\, such as graphene and transition metal dichalcogenides\, for n ext-generation nanoelectronics. Their unique electronic properties\, inclu ding high carrier mobility and tunable bandgaps\, offer significant advant ages for the development of high-performance transistors\, flexible electr onics\, and optoelectronic devices. While challenges remain in terms of la rge-scale synthesis and device integration\, ongoing research on 2D materi al heterostructures and strain engineering holds great promise for future advancements in the field of nanoelectronics 2D Materials for Nanoelectron ics presents extensive\, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.</p> END:VEVENT END:VCALENDAR