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TZID:America/Sao_Paulo
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DTSTART:20380119T001407
TZOFFSETFROM:-0300
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DTSTART:20190216T230000
TZOFFSETFROM:-0200
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RRULE:FREQ=YEARLY;BYDAY=3SA;BYMONTH=2
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END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20250128T013105Z
UID:300EA2DB-F147-471E-8EA1-CE616D3A330A
DTSTART;TZID=America/Sao_Paulo:20240410T143000
DTEND;TZID=America/Sao_Paulo:20240410T153000
DESCRIPTION:In this seminar\, studies on Hall effects and their inverses in
  transition metal dichalcogenides (TMDs) will be presented\, utilizing spi
 n pumping as the primary tool. Thin films of yttrium iron garnet (YIG)\, p
 roduced by magnetron sputtering\, were used as spin current injectors into
  monolayers and multilayers of TMDs. Automated mechanical exfoliation tech
 nique was employed for growing multilayers of different TMDs on YIG\, whil
 e monolayers of molybdenum disulfide (MoS2) were obtained through chemical
  vapor deposition. Spin pumping results on various types and thicknesses o
 f TMDs indicated the existence of inverse Rashba-Edelstein effect at the Y
 IG/TMD heterostructure interface. In MoS2 monolayers\, two contributions t
 o spin pumping were identified. The first originated from conductive state
 s present at the edges\, while the second stemmed from semiconductor state
 s within the crystal area. Manipulation of the average size of these cryst
 als revealed a competition between the contributions of these two electron
 ic states to spin pumping. Moreover\, depending on the ratio between these
  two states\, it was investigated that the excitation of light-induced met
 allic states is capable of modulating spin current injection\, either incr
 easing\, decreasing\, or completely nullifying the phenomenon.\n\nRecife\,
  Pernambuco\, Brazil
LOCATION:Recife\, Pernambuco\, Brazil
ORGANIZER:magchapterufpe@gmail.com
SEQUENCE:9
SUMMARY:Hall effects by spin pumping in Transition Metal dichalcogenides
URL;VALUE=URI:https://events.vtools.ieee.org/m/464037
X-ALT-DESC:Description: <br /><h1 class="_ap3a _aaco _aacu _aacx _aad7 _aad
 e" dir="auto" style="text-align: justify\;"><strong>In this seminar\, stud
 ies on Hall effects and their inverses in transition metal dichalcogenides
  (TMDs) will be presented\, utilizing spin pumping as the primary tool. Th
 in films of yttrium iron garnet (YIG)\, produced by magnetron sputtering\,
  were used as spin current injectors into monolayers and multilayers of TM
 Ds. Automated mechanical exfoliation technique was employed for growing mu
 ltilayers of different TMDs on YIG\, while monolayers of molybdenum disulf
 ide (MoS2) were obtained through chemical vapor deposition. Spin pumping r
 esults on various types and thicknesses of TMDs indicated the existence of
  inverse Rashba-Edelstein effect at the YIG/TMD heterostructure interface.
  In MoS2 monolayers\, two contributions to spin pumping were identified. T
 he first originated from conductive states present at the edges\, while th
 e second stemmed from semiconductor states within the crystal area. Manipu
 lation of the average size of these crystals revealed a competition betwee
 n the contributions of these two electronic states to spin pumping. Moreov
 er\, depending on the ratio between these two states\, it was investigated
  that the excitation of light-induced metallic states is capable of modula
 ting spin current injection\, either increasing\, decreasing\, or complete
 ly nullifying the phenomenon.</strong></h1>
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