BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Europe/London BEGIN:DAYLIGHT DTSTART:20250330T020000 TZOFFSETFROM:+0000 TZOFFSETTO:+0100 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZNAME:BST END:DAYLIGHT BEGIN:STANDARD DTSTART:20241027T010000 TZOFFSETFROM:+0100 TZOFFSETTO:+0000 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZNAME:GMT END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20260215T202727Z UID:48E1D1F6-D1AA-4D47-9A96-FB4F2159056B DTSTART;TZID=Europe/London:20250205T150000 DTEND;TZID=Europe/London:20250205T160000 DESCRIPTION:[]\n\nIEEE Seminar: Megawatt Scale Silicon Carbide Converter an d Device Research at The University of Edinburgh\n\nSpeaker: Dr Paul Judge \, Reader\, The University of Edinburgh\, Royal Society Industry Fellow\, Co-Director\, EPSRC N-ZEEE\n\nTime: 3:00 pm – 4:00 pm\, 5th February 202 5\n\nVenue: 330\, School of Engineering (Y8 on the Map)\, University of Bi rmingham & Online via Teams\n\nAbstract:\n\nSilicon Carbide (SiC) MOSFETs offer increased switching speeds\, reduced filtering requirements and lowe r switching losses when compared to Silicon IGBTs in power-converters. SiC MOSFETs have disrupted the power-semiconductor market at lower power-rati ngs of 20-200 kW\, and are now commonly used in electrical vehicle applica tions. Devices with current ratings approaching the kiloamp region are now becoming available\, meaning a pathway for SiC MOSFETs to continue displa cing IGBTs up the power chain to applications such as traction and renewab les now exists. This talk will discuss the work of the Power-Electronics t eam at Edinburgh\, where we have focused on some of the challenges associa ted with implementing Megawatt scale SiC MOSFET converters\, including: bu sbar design for minimisation of commutation loop inductance\; Effective pa rallel connection of modules to scale the switching performance achievable with lower-current devices to kiloamp scale\, while also reducing voltage overshoots and oscillatory switching behaviour\; and active gate-driving techniques to mitigate overshoots and oscillatory switching at source\, wi th minimal impact on switching energy loss.\n\nHosts: School of Engineerin g\, University of Birmingham\; Birmingham Energy Institute\n\nOrganiser: I EEE PES UK&I Chapter\n\nCo-organisers: IEEE PES Student Branch Chapters at :\n\n- University of Birmingham\n- University of Manchester\n- University of Sheffield\n- University College Dublin\n- Imperial College London\n- Un iversity of Strathclyde\n\nCo-sponsored by: School of Engineering\, Univer sity of Birmingham\; Birmingham Energy Institute.\n\nSpeaker(s): Paul Judg e\, \n\nRoom: 330\, Bldg: School of Engineering (Y8 on the Map)\, Universi ty of Birmingham\, Birmingham\, England\, United Kingdom\, B15 2TT\, Virtu al: https://events.vtools.ieee.org/m/466714 LOCATION:Room: 330\, Bldg: School of Engineering (Y8 on the Map)\, Universi ty of Birmingham\, Birmingham\, England\, United Kingdom\, B15 2TT\, Virtu al: https://events.vtools.ieee.org/m/466714 ORGANIZER:audiche@ieee.org SEQUENCE:17 SUMMARY:IEEE Seminar: Megawatt Scale Silicon Carbide Converter and Device R esearch at The University of Edinburgh URL;VALUE=URI:https://events.vtools.ieee.org/m/466714 X-ALT-DESC:Description: <br /><p><img src="https://events.vtools.ieee.org/v tools_ui/media/display/73bd4fa0-fd3a-4582-a2ff-73fee935d28a" alt="" width= "900" height="456"></p>\n<p class="MsoNormal">&nbsp\;</p>\n<p class="MsoNo rmal">IEEE Seminar: Megawatt Scale Silicon Carbide Converter and Device Re search at The University of Edinburgh</p>\n<p class="MsoNormal">Speaker: D r <strong>Paul Judge</strong>\, Reader\, The University of Edinburgh\, Roy al Society Industry Fellow\, Co-Director\, EPSRC N-ZEEE</p>\n<p class="Mso Normal">Time: 3:00 pm &ndash\; 4:00 pm\, 5<sup>th</sup> February 2025</p>\ n<p class="MsoNormal">Venue: 330\, School of Engineering (Y8 on the Map)\, University of Birmingham &amp\; Online via Teams</p>\n<p class="MsoNormal ">&nbsp\;</p>\n<p class="MsoNormal">Abstract:</p>\n<p class="MsoNormal"><s pan data-olk-copy-source="MessageBody">Silicon Carbide (SiC) MOSFETs offer increased switching speeds\, reduced filtering requirements and lower swi tching losses when compared to Silicon IGBTs in power-converters. SiC MOSF ETs have disrupted the power-semiconductor market at lower power-ratings o f 20-200 kW\, and are now commonly used in electrical vehicle applications . Devices with current ratings approaching the kiloamp region are now beco ming available\, meaning a pathway for SiC MOSFETs to continue displacing IGBTs up the power chain to applications such as traction and renewables n ow exists. This talk will discuss the work of the Power-Electronics team a t Edinburgh\, where we have focused on some of the challenges associated w ith implementing Megawatt scale SiC MOSFET converters\, including: busbar design for minimisation of commutation loop inductance\; Effective paralle l connection of modules to scale the switching performance achievable with lower-current devices to kiloamp scale\, while also reducing voltage over shoots and oscillatory switching behaviour\; and active gate-driving techn iques to mitigate overshoots and oscillatory switching at source\, with mi nimal impact on switching energy loss.</span></p>\n<p class="MsoNormal">&n bsp\;</p>\n<p class="MsoNormal"><strong><span lang="EN-US" style="mso-ansi -language: EN-US\;">Hosts: </span></strong>School of Engineering\, Univers ity of Birmingham\; Birmingham Energy Institute</p>\n<p class="MsoNormal"> <strong>Organiser</strong>:<strong> </strong>IEEE PES UK&amp\;I Chapter</p >\n<p class="MsoNormal"><strong><span lang="EN-US" style="mso-ansi-languag e: EN-US\;">Co-organisers</span></strong><span lang="EN-US" style="mso-ans i-language: EN-US\;">:&nbsp\;</span>IEEE PES Student Branch Chapters at:</ p>\n<ul>\n<li>University of Birmingham</li>\n<li>University of Manchester< /li>\n<li>University of Sheffield</li>\n<li>University College Dublin</li> \n<li>Imperial College London</li>\n<li>University of Strathclyde</li>\n</ ul>\n<p class="MsoNormal">&nbsp\;</p> END:VEVENT END:VCALENDAR