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DTSTAMP:20250418T170748Z
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DTSTART;TZID=America/Los_Angeles:20250416T183000
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DESCRIPTION:This presentation discusses high power monolithic microwave int
 egrated circuit (MMIC) power amplifier (PA) design in Gallium Arsenide (Ga
 As) and Gallium Nitride (GaN). At a high level\, GaN versus GaAs semicondu
 ctor technology from the perspective of power amplifier design metrics is 
 analyzed to help determine the relative advantages and disadvantages of ea
 ch technology. This is followed with an introduction of the most prevalent
  MMIC design topologies for the bulk of microwave applications which inclu
 de reactively matched\, non-uniform distributed\, balanced\, push-pull\, D
 oherty and serially combined. Following introduction of the main topologie
 s\, the presentation focuses on the potential pitfalls the MMIC designer c
 an encounter with detailed discussion on how to avoid them with the goal o
 f first past design success. The presentation relies on experience from th
 e author’s career with over 20 years of experience in the defense and co
 mmercial industries as well as academia. MMIC designers will appreciate th
 e candid explanation of the design topologies and pitfalls while non-desig
 ners will come away with a good working knowledge of what can be achieved 
 and what to watch out for.\n\nSpeaker(s): \, Michael\n\nVirtual: https://e
 vents.vtools.ieee.org/m/472102
LOCATION:Virtual: https://events.vtools.ieee.org/m/472102
ORGANIZER:vvi4hc@virginia.edu
SEQUENCE:10
SUMMARY:Power Without Pain: High Power MMIC PA Design\, the Pitfalls and ho
 w to Avoid Them
URL;VALUE=URI:https://events.vtools.ieee.org/m/472102
X-ALT-DESC:Description: <br /><p class="MsoNormal" style="background: white
 \;"><span style="font-size: 11.0pt\; font-family: 'Arial'\,sans-serif\; ms
 o-fareast-font-family: 'Times New Roman'\; color: #222222\; mso-font-kerni
 ng: 0pt\; mso-ligatures: none\;">This presentation discusses high power mo
 nolithic microwave integrated circuit (MMIC) power amplifier (PA) design i
 n Gallium Arsenide (GaAs) and Gallium Nitride (GaN).&nbsp\; At a high leve
 l\, GaN versus GaAs semiconductor technology from the perspective of power
  amplifier design metrics is analyzed to help determine the relative advan
 tages and disadvantages of each technology.&nbsp\; This is followed with a
 n introduction of the most prevalent MMIC design topologies for the bulk o
 f microwave applications which include reactively matched\, non-uniform di
 stributed\, balanced\, push-pull\, Doherty and serially combined.&nbsp\; F
 ollowing introduction of the main topologies\, the presentation focuses on
  the potential pitfalls the MMIC designer can encounter with detailed disc
 ussion on how to avoid them with the goal of first past design success.&nb
 sp\; The presentation relies on experience from the author&rsquo\;s career
  with over 20 years of experience in the defense and commercial industries
  as well as academia.&nbsp\; MMIC designers will appreciate the candid exp
 lanation of the design topologies and pitfalls while non-designers will co
 me away with a good working knowledge of what can be achieved and what to 
 watch out for.</span></p>
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