BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Chicago BEGIN:DAYLIGHT DTSTART:20250309T030000 TZOFFSETFROM:-0600 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:CDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0500 TZOFFSETTO:-0600 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20250502T143307Z UID:CE6591F5-EDF6-4911-864D-35E923A3DFEF DTSTART;TZID=America/Chicago:20250501T113000 DTEND;TZID=America/Chicago:20250501T124500 DESCRIPTION:This presentation discusses high power monolithic microwave int egrated circuit (MMIC) power amplifier (PA) design in Gallium Arsenide (Ga As) and Gallium Nitride (GaN). At a high level\, GaN versus GaAs semicondu ctor technology from the perspective of power amplifier design metrics is analyzed to help determine the relative advantages and disadvantages of ea ch technology. This is followed with an introduction of the most prevalent MMIC design topologies for the bulk of microwave applications which inclu de reactively matched\, non-uniform distributed\, balanced\, push-pull\, D oherty and serially combined. Following introduction of the main topologie s\, the presentation focuses on the potential pitfalls the MMIC designer c an encounter with detailed discussion on how to avoid them with the goal o f first past design success. The presentation relies on experience from th e author’s career with over 20 years of experience in the defense and co mmercial industries as well as academia. MMIC designers will appreciate th e candid explanation of the design topologies and pitfalls while non-desig ners will come away with a good working knowledge of what can be achieved and what to watch out for.\n\nCo-sponsored by: Technology Service Corporat ion\n\nSpeaker(s): Dr. Michael Roberg\, \n\nAgenda: \n11:20 - 11:30: Arriv e\, check in\, get lunch\n\n11:30 - 11:35: Welcome and Introduction\n\n11: 35 - 12:30: Speaker: Dr. Michael Roberg\, Qorvo\n\n12:30 - 12:45: Q&A\n\n1 2:45: Adjourn\n\nRoom: CR1A\, 310 Voyager Way NW\, Huntsville\, Alabama\, United States\, 35806 LOCATION:Room: CR1A\, 310 Voyager Way NW\, Huntsville\, Alabama\, United St ates\, 35806 ORGANIZER:ron.jackson.jr@ieee.org SEQUENCE:21 SUMMARY:Power Without Pain: High Power MMIC PA Design\, the Pitfalls and ho w to Avoid Them URL;VALUE=URI:https://events.vtools.ieee.org/m/472800 X-ALT-DESC:Description: <br /><p>This presentation discusses high power mon olithic microwave integrated circuit (MMIC) power amplifier (PA) design in Gallium Arsenide (GaAs) and Gallium Nitride (GaN). &nbsp\;At a high level \, GaN versus GaAs semiconductor technology from the perspective of power amplifier design metrics is analyzed to help determine the relative advant ages and disadvantages of each technology. &nbsp\;This is followed with an introduction of the most prevalent MMIC design topologies for the bulk of microwave applications which include reactively matched\, non-uniform dis tributed\, balanced\, push-pull\, Doherty and serially combined. &nbsp\;Fo llowing introduction of the main topologies\, the presentation focuses on the potential pitfalls the MMIC designer can encounter with detailed discu ssion on how to avoid them with the goal of first past design success. &nb sp\;The presentation relies on experience from the author&rsquo\;s career with over 20 years of experience in the defense and commercial industries as well as academia. &nbsp\;MMIC designers will appreciate the candid expl anation of the design topologies and pitfalls while non-designers will com e away with a good working knowledge of what can be achieved and what to w atch out for.</p><br /><br />Agenda: <br /><p>11:20 - 11:30: Arrive\, chec k in\, get lunch</p>\n<p>11:30 - 11:35: Welcome and Introduction</p>\n<p>1 1:35 - 12:30: Speaker: Dr. Michael Roberg\, Qorvo</p>\n<p>12:30 - 12:45: Q &amp\;A</p>\n<p>12:45: Adjourn</p> END:VEVENT END:VCALENDAR