BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20250309T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20250331T184227Z UID:F81840C5-51CE-4BAB-B390-ED97150A18A3 DTSTART;TZID=America/New_York:20250328T140000 DTEND;TZID=America/New_York:20250328T153000 DESCRIPTION:Two-Dimensional Semiconductors for Low-Power Logic and Memory D evices\n\nDeep Jariwala\n\nDepartment of Electrical and Systems Engineerin g\n\nUniversity of Pennsylvania\, USA\n\nAbstract: Silicon has been the do minant material for electronic computing for decades and very likely will stay dominant for the foreseeable future. However\, it is well-known that Moore’s law that propelled Silicon into this dominant position is long d ead. Therefore\, a fervent search for (i) new semiconductors that could di rectly replace silicon or (ii) new architectures with novel materials/devi ces added onto silicon or (iii) new physics/state-variables or a combinati on of above has been the subject of much of the electronic materials and d evices research of the past 2 decades. The above problem is further compli cated by the changing paradigm of computing from arithmetic centric to dat a centric in the age of billions of internet-connected devices and artific ial intelligence as well as the ubiquity of computing in ever more challen ging environments. Therefore\, there is a pressing need for complementing and supplementing Silicon to operate with greater efficiency\, speed and h andle greater amounts of data. This is further necessary since a completel y novel and paradigm changing computing platform (e.g. all optical computi ng or quantum computing) remains out of reach for now.\n\nThe above is how ever not possible without fundamental innovation in new electronic materia ls and devices. Therefore\, in this talk\, I will try to make the case of how novel layered two-dimensional (2D) chalcogenide materials and three-di mensional (3D) nitride materials might present interesting avenues to over come some of the limitations being faced by Silicon hardware. I will also highlight ongoing work and opportunities to extend the application of III nitride ferroelectric materials into extreme environments electronics.\n\n Then\, on the optical and photonic materials side I will first make the ca se for van der Waals bonded semiconductors which exhibit strong excitonic resonances and large optical dielectric constants as compared to bulk 3D s emiconductors. First\, I will focus on the subject of strong light-matter coupling in excitonic 2D semiconductors\, namely chalcogenides of Mo and W . Visible spectrum band-gaps with strong excitonic absorption makes transi tion metal dichalcogenides (TMDCs) of molybdenum and tungsten as attractiv e candidates for investigating strong light-matter interaction formation o f hybrid states. I will then extend the analogy to hybrid 2D materials and 1D carbon nanotubes.\n\nBio: Deep Jariwala is an Associate Professor and the Peter & Susanne Armstrong Distinguished Scholar in the Electrical and Systems Engineering as well as Materials Science and Engineering at the Un iversity of Pennsylvania (Penn). Deep completed his undergraduate degree i n Metallurgical Engineering from the Indian Institute of Technology in Var anasi and his Ph.D. in Materials Science and Engineering at Northwestern U niversity. Deep was a Resnick Prize Postdoctoral Fellow at Caltech before joining Penn to start his own research group. His research interests broad ly lie at the intersection of new materials\, surface science and solid-st ate devices for computing\, opto-electronics and energy harvesting applica tions in addition to the development of correlated and functional imaging techniques. Deep’s research has been widely recognized with several awar ds from professional societies\, funding bodies\, industries as well as pr ivate foundations\, the most notable ones being the Optica Adolph Lomb Med al\, the Bell Labs Prize\, the AVS Peter Mark Memorial Award\, IEEE Photon ics Society Young Investigator Award\, IEEE Nanotechnology Council Young I nvestigator Award\, IUPAP Early Career Scientist Prize in Semiconductors a nd the Alfred P. Sloan Fellowship. He has published over 150 journal paper s with more than 21000 citations and holds several patents. He serves as t he Associate Editor for ACS Nano Letters and has been appointed as a Disti nguished Lecturer for the IEEE Nanotechnology Council for 2025.\n\nPlace: 230A Davis Hall\, University at Buffalo\, North Campus\, Buffalo\, NY 1426 0\n\nDate and time: March 28th\, Friday 2025\, 2pm EST\n\nHost: Huamin Li (huaminli@buffalo.edu) on behalf of the IEEE Buffalo Section\n\nCo-sponsor ed by: University at Buffalo \n\n230A Davis Hall\, Buffalo\, New York\, Un ited States\, 14260 LOCATION:230A Davis Hall\, Buffalo\, New York\, United States\, 14260 ORGANIZER:huaminli@buffalo.edu SEQUENCE:29 SUMMARY:IEEE Nanotechnology Council (NTC) Distinguished Lecture - Deep Jari wala URL;VALUE=URI:https://events.vtools.ieee.org/m/475781 X-ALT-DESC:Description: <br /><p><strong>Two-Dimensional Semiconductors for Low-Power Logic and Memory Devices</strong></p>\n<p><strong>Deep Jariwala </strong></p>\n<p>Department of Electrical and Systems Engineering</p>\n<p >University of Pennsylvania\, USA</p>\n<p>&nbsp\;</p>\n<p><strong>Abstract : </strong>Silicon has been the dominant material for electronic computing for decades and very likely will stay dominant for the foreseeable future . However\, it is well-known that Moore&rsquo\;s law that propelled Silico n into this dominant position is long dead. Therefore\, a fervent search f or (i) new semiconductors that could directly replace silicon or (ii) new architectures with novel materials/devices added onto silicon or (iii) new physics/state-variables or a combination of above has been the subject of much of the electronic materials and devices research of the past 2 decad es. The above problem is further complicated by the changing paradigm of c omputing from arithmetic centric to data centric in the age of billions of internet-connected devices and artificial intelligence as well as the ubi quity of computing in ever more challenging environments. Therefore\, ther e is a pressing need for complementing and supplementing Silicon to operat e with greater efficiency\, speed and handle greater amounts of data. This is further necessary since a completely novel and paradigm changing compu ting platform (e.g. all optical computing or quantum computing) remains ou t of reach for now.</p>\n<p>The above is however not possible without fund amental innovation in new electronic materials and devices. Therefore\, in this talk\, I will try to make the case of how novel layered two-dimensio nal (2D) chalcogenide materials and three-dimensional (3D) nitride materia ls might present interesting avenues to overcome some of the limitations b eing faced by Silicon hardware. I will also highlight ongoing work and opp ortunities to extend the application of III nitride ferroelectric material s into extreme environments electronics.</p>\n<p>Then\, on the optical and photonic materials side I will first make the case for van der Waals bond ed semiconductors which exhibit strong excitonic resonances and large opti cal dielectric constants as compared to bulk 3D semiconductors. First\, I will focus on the subject of strong light-matter coupling in excitonic 2D semiconductors\, namely chalcogenides of Mo and W. Visible spectrum band-g aps with strong excitonic absorption makes transition metal dichalcogenide s (TMDCs) of molybdenum and tungsten as attractive candidates for investig ating strong light-matter interaction formation of hybrid states. I will t hen extend the analogy to hybrid 2D materials and 1D carbon nanotubes.</p> \n<p>&nbsp\;</p>\n<p><strong>Bio: </strong>Deep Jariwala is an Associate P rofessor and the Peter &amp\; Susanne Armstrong Distinguished Scholar in t he Electrical and Systems Engineering as well as Materials Science and Eng ineering at the University of Pennsylvania (Penn). Deep completed his unde rgraduate degree in Metallurgical Engineering from the Indian Institute of Technology in Varanasi and his Ph.D. in Materials Science and Engineering at Northwestern University. Deep was a Resnick Prize Postdoctoral Fellow at Caltech before joining Penn to start his own research group. His resear ch interests broadly lie at the intersection of new materials\, surface sc ience and solid-state devices for computing\, opto-electronics and energy harvesting applications in addition to the development of correlated and f unctional imaging techniques. Deep&rsquo\;s research has been widely recog nized with several awards from professional societies\, funding bodies\, i ndustries as well as private foundations\, the most notable ones being the Optica Adolph Lomb Medal\, the Bell Labs Prize\, the AVS Peter Mark Memor ial Award\, IEEE Photonics Society Young Investigator Award\, IEEE Nanotec hnology Council Young Investigator Award\, IUPAP Early Career Scientist Pr ize in Semiconductors and the Alfred P. Sloan Fellowship. He has published over 150 journal papers with more than 21000 citations and holds several patents. He serves as the Associate Editor for ACS&nbsp\;<em>Nano Letters& nbsp\;</em>and has been appointed as a Distinguished Lecturer for the IEEE Nanotechnology Council for 2025.</p>\n<p>&nbsp\;</p>\n<p><strong>Place: < /strong>230A Davis Hall\, University at Buffalo\, North Campus\, Buffalo\, NY 14260</p>\n<p><strong>Date and time: </strong>March 28th\, Friday 2025 \, 2pm EST</p>\n<p><strong>Host: </strong>Huamin Li (huaminli@buffalo.edu) on behalf of the IEEE Buffalo Section</p> END:VEVENT END:VCALENDAR