BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20250309T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20250424T145008Z UID:55887A89-C705-475B-9ADB-8D808CF1C94C DTSTART;TZID=America/New_York:20250423T183000 DTEND;TZID=America/New_York:20250423T200000 DESCRIPTION:Abstract: Our group's research focuses on nanostructured semico nductor materials and devices\, utilizing bottom-up MOCVD growth and top-d own nanofabrication approaches to push the boundaries of semiconductor tec hnology. Our goal is to create new device architectures that can transform the fields of electronics\, photonics\, quantum technologies\, and potent ially medicine.\n\nIn this talk\, I will present two of our pioneering nan ofabrication platforms that aim to address the increasing complexity in di mensional scaling and integration. Firstly\, we developed an unorthodox an isotropic etching method\, metal-assisted chemical etching (MacEtch)\, ena bling damage-free fabrication of semiconductor nanostructures with unprece dentedly high aspect ratios and versatility for high-performance electroni c and photonic devices. Some of the examples that I will use are MacEtch-e nabled β-Ga2O3 FinFETs and damage-free microLEDs. Secondly\, I will discu ss our 3D self-rolled-up membrane (S-RuM) nanotechnology platform that has been used for extreme miniaturization of passive electronic components\, such as inductors\, transformers\, and L-C resonators for radio frequency integrated circuits (RFICs). We believe that these innovative platforms ho ld the potential to unleash unprecedented levels of performance and functi onality in semiconductor materials and devices.\n\nCo-sponsored by: Electr on Devices Society (ED15) - Northern Va Chapter \n\nSpeaker(s): Pro.Xuilin g\, \n\nAgenda: \n- Date: 23 Apr 2025\n- Time: 06:30 PM EDT to 08:00 PM ED T\n\nVirtual: https://events.vtools.ieee.org/m/477962 LOCATION:Virtual: https://events.vtools.ieee.org/m/477962 ORGANIZER:fsemendy@ieee.org SEQUENCE:116 SUMMARY:Pushing the Boundaries of Nano-fabrication and Semiconductor Techno logy with Innovative Platforms URL;VALUE=URI:https://events.vtools.ieee.org/m/477962 X-ALT-DESC:Description: <br /><p class="MsoNormal" style="margin-bottom: 0i n\; text-align: justify\; line-height: normal\;"><strong style="mso-bidi-f ont-weight: normal\;"><span style="font-size: 12.0pt\; font-family: 'Times New Roman'\,serif\;">Abstract:</span></strong><span style="font-size: 12. 0pt\; font-family: 'Times New Roman'\,serif\;"><span style="mso-spacerun: yes\;">&nbsp\; </span>Our group's research focuses on nanostructured semic onductor materials and devices\, utilizing bottom-up MOCVD growth and top- down nanofabrication approaches to push the boundaries of semiconductor te chnology. Our goal is to create new device architectures that can transfor m the fields of electronics\, photonics\, quantum technologies\, and poten tially medicine.</span></p>\n<p class="MsoNormal" style="margin-bottom: 0i n\; text-align: justify\; line-height: normal\;"><span style="font-size: 1 2.0pt\; font-family: 'Times New Roman'\,serif\;">In this talk\, I will pre sent two of our pioneering nanofabrication platforms that aim to address t he increasing complexity in dimensional scaling and integration. Firstly\, we developed an unorthodox anisotropic etching method\, metal-assisted ch emical etching (<strong>MacEtch</strong>)\, enabling damage-free fabricati on of semiconductor nanostructures with unprecedentedly high aspect ratios and versatility for high-performance electronic and photonic devices. Som e of the examples that I will use are MacEtch-enabled &beta\;-Ga<sub>2</su b>O<sub>3</sub> FinFETs and damage-free microLEDs. Secondly\, I will discu ss our 3D self-rolled-up membrane (<strong>S-RuM</strong>) nanotechnology platform that has been used for extreme miniaturization of passive electro nic components\, such as inductors\, transformers\, and L-C resonators for radio frequency integrated circuits (RFICs). We believe that these innova tive platforms hold the potential to unleash unprecedented levels of perfo rmance and functionality in semiconductor materials and devices.</span></p ><br /><br />Agenda: <br /><ul class="list-unstyled" style="box-sizing: bo rder-box\; margin-top: 0px\; margin-bottom: 10px\; padding-left: 15px\; li st-style: none\; color: rgb(97\, 97\, 97)\; font-family: 'Open Sans'\, for mata\, Verdana\, sans-serif\; font-size: 14px\; font-style: normal\; font- variant-ligatures: normal\; font-variant-caps: normal\; font-weight: 400\; letter-spacing: normal\; orphans: 2\; text-align: start\; text-indent: 0p x\; text-transform: none\; widows: 2\; word-spacing: 0px\; -webkit-text-st roke-width: 0px\; white-space: normal\; background-color: rgb(255\, 249\, 243)\; text-decoration-thickness: initial\; text-decoration-style: initial \; text-decoration-color: initial\;">\n<li style="box-sizing: border-box\; margin-top: 10px\;">Date:&nbsp\;<strong style="box-sizing: border-box\; f ont-weight: bold\;"><span class="tooltip-active" style="box-sizing: border -box\; white-space: normal !important\;" title="" data-toggle="tooltip" da ta-placement="top" data-html="true">23 Apr 2025</span></strong></li>\n<li style="box-sizing: border-box\; margin-top: 10px\;">Time:&nbsp\;<strong st yle="box-sizing: border-box\; font-weight: bold\;"><span class="tooltip-ac tive" style="box-sizing: border-box\; white-space: normal !important\;" ti tle="" data-toggle="tooltip" data-placement="top" data-html="true">06:30 P M EDT</span>&nbsp\;to&nbsp\;<span class="tooltip-active" style="box-sizing : border-box\; white-space: normal !important\;" title="" data-toggle="too ltip" data-placement="top" data-html="true">08:00 PM EDT</span></strong></ li>\n</ul> END:VEVENT END:VCALENDAR