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DTSTAMP:20250417T062204Z
UID:5FAA80BF-A563-4258-98C3-FFF193C55628
DTSTART;TZID=Asia/Kolkata:20250225T103000
DTEND;TZID=Asia/Kolkata:20250225T113000
DESCRIPTION:In recent years\, researchers have leveraged the unique physica
 l properties of layered two-dimensional (2D) van der Waals (vdW) materials
 \, such as a wide range of thickness-dependent bandgaps and facile fabrica
 tion of heterostructures with defect-free heterointerfaces\, for several e
 lectronic applications. At the same time\, their optical and electrical pr
 operties can be controlled using strain tuning of band structure parameter
 s because of their high tensile strength\, as well as via electrostatic ga
 ting based tuning of carrier concentrations because of their ultra-thin na
 ture.\n\nThis presentation will first describe recent results from our gro
 up on engineering the strain-modulated performance of transistors based on
  2D vdW transition metal dichalcogenide (TMD) semiconductors. Specifically
 \, an electrically actuated piezo-stack is shown to fine-tune optical and 
 electrical parameters of MoS2 field-effect transistors with tensile as wel
 l as compressive strain\, offering improved control and integration possib
 ilities over existing mechanical methods. [1] Next\, we will describe the 
 use of independent electrostatic gating of contact and channel barriers in
  2D TMD transistors towards realizing neuronal spiking behaviour\, closely
  mimicking biological neurons with functionalities such as spike- frequenc
 y adaptation and post-inhibitory rebound\, at a low energy consumption of 
 3.5 pJ/spike. [2]\n\nReferences\n\n[1] A. Varghese\, A. Pandey\, P. Sharma
 \, Y. Yin\, N. Medhekar\, S. Lodha\, Nano letters\, 24\, 28\, 8472–8480\
 , 2024.\n\n[2] K. Thakar\, B. Rajendran\, S. Lodha\, npj 2D Materials and 
 Applications\, 7 (68)\, 2023.\n\nIIT KANPUR\, IIT Kanpur\, Kanpur\, Uttar 
 Pradesh\, India\, 208016
LOCATION:IIT KANPUR\, IIT Kanpur\, Kanpur\, Uttar Pradesh\, India\, 208016
ORGANIZER:alahgere@iitk.ac.in
SEQUENCE:20
SUMMARY:Prof. Saurabh Lodha
URL;VALUE=URI:https://events.vtools.ieee.org/m/481681
X-ALT-DESC:Description: <br /><blockquote>\n<div id="m_-2428263749572888692
 replybody1">\n<div lang="EN-IN">\n<div>\n<p>In recent years\, researchers 
 have leveraged the unique physical properties of layered two-dimensional (
 2D) van der Waals (vdW) materials\, such as a wide range of thickness-depe
 ndent bandgaps and facile fabrication of heterostructures with defect-free
  heterointerfaces\, for several electronic applications. At the same time\
 , their optical and electrical properties can be controlled using strain t
 uning of band structure parameters because of their high tensile strength\
 , as well as via electrostatic gating based tuning of carrier concentratio
 ns because of their ultra-thin nature.</p>\n<p>This presentation will firs
 t describe recent results from our group on engineering the strain-modulat
 ed performance of transistors based on 2D vdW transition metal dichalcogen
 ide (TMD) semiconductors. Specifically\, an electrically actuated piezo-st
 ack is shown to fine-tune optical and electrical parameters of MoS2 field-
 effect transistors with tensile as well as compressive strain\, offering i
 mproved control and integration possibilities over existing mechanical met
 hods. [1] Next\, we will describe the use of independent electrostatic gat
 ing of contact and channel barriers in 2D TMD transistors towards realizin
 g neuronal spiking behaviour\, closely mimicking biological neurons with f
 unctionalities such as spike- frequency adaptation and post-inhibitory reb
 ound\, at a low energy consumption of 3.5 pJ/spike. [2]</p>\n<blockquote>\
 n<div id="m_-2428263749572888692replybody1">\n<div lang="EN-IN">\n<div>\n<
 p>References</p>\n<p>[1]&nbsp\;&nbsp\;A. Varghese\, A. Pandey\, P. Sharma\
 , Y. Yin\, N. Medhekar\, S. Lodha\, Nano letters\,&nbsp\;24\, 28\, 8472&nd
 ash\;8480\, 2024.</p>\n<p>[2]&nbsp\;&nbsp\;K. Thakar\, B. Rajendran\, S. L
 odha\, npj 2D Materials and Applications\, 7 (68)\, 2023.</p>\n</div>\n</d
 iv>\n</div>\n</blockquote>\n</div>\n</div>\n</div>\n</blockquote>
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