BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Chicago BEGIN:DAYLIGHT DTSTART:20250309T030000 TZOFFSETFROM:-0600 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:CDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20251102T010000 TZOFFSETFROM:-0500 TZOFFSETTO:-0600 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20250512T205349Z UID:63CDEF37-E597-4386-8D0D-21B747596FEE DTSTART;TZID=America/Chicago:20250512T140000 DTEND;TZID=America/Chicago:20250512T150000 DESCRIPTION:Abstract\nWith the advances in information processing technolog y\, the importance of high-density data storage is increasing. For example \, it is predicted that the total global amount of digital data will reach 163 ZB in this year. On the other hand\, studies on thermal fluctuations predict that magnetic storage\, which plays a major role in this field\, w ill reach a theoretical limit in the near future\, and thus a novel high-d ensity storage method is required.\nFerroelectrics can hold bit informatio n in the form of the polarization direction of individual domains. Moreove r\, the domain wall of typical ferroelectric materials with no exchange in teraction between electric dipoles is as thin as a few lattice parameters\ , which is favorable for high-density data storage.\nWith this background\ , we previously proposed ferroelectric data storage that uses scanning non linear dielectric microscopy (SNDM)\, called SNDM probe memory\, as a next -generation ultrahigh-density information recording method. We confirmed e xtremely high recording density and high-speed writing using LiTaO3 single crystal media\, i.e. 2.8-nm f single nano-domain inversion dot formation\ , real information storage at a density of 4 Tbit/inch2\, and 500-psec hig h speed domain switching.\nIn this seminar\, I will outline recent researc h and development toward the practical application of this SNDM probe memo ry.\nThe contents of the talk are as follows.\n\n-\nOverview of SNDM probe memory operating principles and high-density recording results.\n-\nPropo sal of Heat assisted ferroelectric reading (HAFeR) for high speed ferroele ctric probe data storage.\n-\nDemonstration of actual nanosecond dielectri c response using HAFeR technology\n-\n8-inch f 30nm thick PZT single-cryst al like recording media trial fabrication by sputtering method for the rea listic recording media.\n-\n\nSpeaker(s): Yasuo\n\nVirtual: https://events .vtools.ieee.org/m/482406 LOCATION:Virtual: https://events.vtools.ieee.org/m/482406 ORGANIZER:Chris.j.rea@seagate.com SEQUENCE:3 SUMMARY:Recent Progress on Research and Development for Practical Applicati on of HDD-Type Ultra-High Density Ferroelectric Data Storage URL;VALUE=URI:https://events.vtools.ieee.org/m/482406 X-ALT-DESC:Description: <br /><div class="x_elementToProof">&nbsp\;</div>\n <div class="x_elementToProof"><u>Abstract</u></div>\n<div class="x_element ToProof">With the advances in information processing technology\, the impo rtance of high-density data storage is increasing. For example\, it is pre dicted that the total global amount of digital data will reach 163 ZB<stro ng>&nbsp\;</strong>in this year. On the other hand\, studies on thermal fl uctuations predict that magnetic storage\, which plays a major role in thi s field\, will reach a theoretical limit in the near future\, and thus a n ovel high-density storage method is required.</div>\n<div class="x_element ToProof">Ferroelectrics can hold bit information in the form of the polari zation direction of individual domains. Moreover\, the domain wall of typi cal ferroelectric materials with no exchange interaction between electric dipoles is as thin as a few lattice parameters\, which is favorable for hi gh-density data storage.</div>\n<div class="x_elementToProof">With this ba ckground\, we previously proposed ferroelectric data storage that uses sca nning nonlinear dielectric microscopy (SNDM)\, called SNDM probe memory\, as a next-generation ultrahigh-density information recording method. We co nfirmed extremely high recording density and high-speed writing using LiTa O3&nbsp\;single crystal media\, i.e. 2.8-nm f&nbsp\;single nano-domain inv ersion dot formation\, real information storage at a density of 4 Tbit/inc h2\, and 500-psec high speed domain switching.</div>\n<div class="x_elemen tToProof">In this seminar\, I will outline recent research and development toward the practical application of this SNDM probe memory.</div>\n<div c lass="x_elementToProof">The contents of the talk are as follows.</div>\n<o l start="1" data-editing-info="{&quot\;applyListStyleFromLevel&quot\;:true }">\n<ol start="1" data-editing-info="{&quot\;applyListStyleFromLevel&quot \;:true}">\n<li>\n<div class="x_elementToProof">Overview of SNDM probe mem ory operating principles&nbsp\;and high-density recording results.</div>\n </li>\n<li>\n<div>Proposal of Heat assisted ferroelectric reading &nbsp\;( HAFeR) for high speed ferroelectric probe data storage.</div>\n</li>\n<li> \n<div>Demonstration of actual nanosecond dielectric response using HAFeR technology</div>\n</li>\n<li>\n<div class="x_elementToProof">8-inch f 30nm thick PZT single-crystal like recording media trial fabrication by sputte ring method for the realistic recording media.</div>\n</li>\n<li>&nbsp\;</ li>\n</ol>\n</ol> END:VEVENT END:VCALENDAR