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DTSTAMP:20250628T165641Z
UID:1C4DDEB1-C278-416E-B4B4-0037B6873270
DTSTART;TZID=America/New_York:20250625T180000
DTEND;TZID=America/New_York:20250625T200000
DESCRIPTION:Gallium nitride (GaN) power devices have only recently become a
 vailable commercially from different copmpanies. The new devices enable th
 e design of converters at higher frequencies and efficiencies than those a
 chievable with conventional Si devices. This webinar will review the chara
 cteristics and figures of marit of different types GaN devices enhancement
  and depletion mode and will give the status of vertical GaN power devices
 . In addition\, the challenges encountered in GaN-based converter design a
 re considered\, such as the consequences of faster switching on gate drive
 r design and board layout. Other issues such as unique reverse conduction 
 behavior\, dynamic RDS_ON\, breakdown mechanisms\, thermal design\, device
  availability\, and reliability qualification will be also discussed.\n\nS
 peaker(s): Tanya\, \n\nEV.2.184 room\,  EV-Bulding\, 1515 Sainte‑Catheri
 ne Street West\, Montreal\, Quebec\, Canada\, H3G 1M8
LOCATION:EV.2.184 room\,  EV-Bulding\, 1515 Sainte‑Catherine Street West\
 , Montreal\, Quebec\, Canada\, H3G 1M8
ORGANIZER:tgachovska@yahoo.com
SEQUENCE:2
SUMMARY:Current Status\, Future Prospects and Reliability of GaN Power HEMT
 s
URL;VALUE=URI:https://events.vtools.ieee.org/m/488924
X-ALT-DESC:Description: <br /><p class="MsoNormal" style="margin-bottom: .0
 001pt\; line-height: normal\;"><span style="font-size: 12.0pt\; mso-bidi-f
 ont-size: 11.0pt\; font-family: 'Times New Roman'\,serif\; mso-fareast-fon
 t-family: 'Times New Roman'\;">Gallium nitride (GaN) power devices have on
 ly recently become available commercially from different copmpanies. The n
 ew devices enable the design of converters at higher frequencies and effic
 iencies than those achievable with conventional Si devices. This webinar w
 ill review the characteristics and figures of marit of different types GaN
  devices enhancement and depletion mode and will give the status of vertic
 al GaN power devices. In addition\, the challenges encountered in GaN-base
 d converter design are considered\, such as the consequences of faster swi
 tching on gate driver design and board layout. Other issues such as unique
  reverse conduction behavior\, dynamic R<sub>DS_ON</sub>\, breakdown mecha
 nisms\, thermal design\, device availability\, and reliability qualificati
 on will be also discussed. </span></p>
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